Untitled
Abstract: No abstract text available
Text: 32E D • 623b320 QDlblSl T « S I P NPN Silicon RF Transistor o , .t-. BFQ 29P SIEMENS/ SPCLi SEMICONDS _ • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. £ CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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623b320
BFQ29P
62702-F
OT-23
/o-20m
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Untitled
Abstract: No abstract text available
Text: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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23b320
BFR35AP
62702-F
OT-23
T-31-17
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zq 405-MF
Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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23b320
BFP193
62702-F
OT-143
zq 405-MF
siemens 30 090
GP 819
SAA 1006
saa 1070
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