82306
Abstract: marking WZ 3HP04MH A0445
Text: 3HP04MH Ordering number : ENA0445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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Original
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3HP04MH
ENA0445
900mm2
A0445-4/4
82306
marking WZ
3HP04MH
A0445
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PDF
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82306
Abstract: ECH8621R
Text: ECH8621R Ordering number : EN8718 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8621R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.
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Original
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ECH8621R
EN8718
900mm2
82306
ECH8621R
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PDF
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a04433
Abstract: A04431
Text: CPH6434 Ordering number : ENA0443 N-Channel Silicon MOSFET CPH6434 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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Original
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ENA0443
CPH6434
900mm2
A0443-4/4
a04433
A04431
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PDF
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a04466
Abstract: 82306 marking QJ SCH1305 SCH2809
Text: SCH2809 Ordering number : ENA0446 SANYO Semiconductors DATA SHEET SCH2809 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained
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Original
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SCH2809
ENA0446
SCH1305)
SBS018)
A0446-6/6
a04466
82306
marking QJ
SCH1305
SCH2809
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PDF
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82306
Abstract: marking KL MCH6412
Text: MCH6412 Ordering number : ENA0448 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6412 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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Original
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MCH6412
ENA0448
900mm2
A0448-4/4
82306
marking KL
MCH6412
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PDF
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A0448
Abstract: 4157M MCH6412 IT11184
Text: MCH6412 注文コード No. N A 0 4 4 8 三洋半導体データシート N MCH6412 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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Original
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MCH6412
900mm2
900mm2
IT11231
IT111232
A0448-3/4
A0448-4/4
A0448
4157M
MCH6412
IT11184
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PDF
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ECH8621R
Abstract: No abstract text available
Text: ECH8621R 注文コード No. N 8 7 1 8 三洋半導体データシート N ECH8621R N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・LiB 用途に最適。 ・2.5V 駆動。
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Original
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ECH8621R
900mm2
IT08319
900mm2
IT08322
IT08323
ECH8621R
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PDF
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a0446
Abstract: SCH1305 SCH2809
Text: SCH2809 注文コード No. N A 0 4 4 6 三洋半導体データシート N SCH2809 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタ SCH1305 とショットキバリアダイオード(SBS018)を 1 パッケージに
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Original
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SCH2809
SCH1305)
SBS018)
900mm2
62006PE
TB-00002323
A0446-1/5
IT06804
a0446
SCH1305
SCH2809
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PDF
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Untitled
Abstract: No abstract text available
Text: MCH6412 Ordering number : ENA0448 N-Channel Silicon MOSFET MCH6412 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage
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Original
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ENA0448
MCH6412
900mm2
A0448-4/4
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PDF
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82306
Abstract: CPH6623
Text: CPH6623 Ordering number : ENA0423 SANYO Semiconductors DATA SHEET CPH6623 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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Original
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CPH6623
ENA0423
900mm2
A0423-4/4
82306
CPH6623
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PDF
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a04433
Abstract: 82306 A0443 CPH6434
Text: CPH6434 Ordering number : ENA0443 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6434 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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Original
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CPH6434
ENA0443
900mm2
A0443-4/4
a04433
82306
A0443
CPH6434
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PDF
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Untitled
Abstract: No abstract text available
Text: ECH8622R Ordering number : EN8719 N-Channel Silicon MOSFET ECH8622R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.
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Original
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EN8719
ECH8622R
900mm2
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PDF
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a04466
Abstract: a0446
Text: SCH2809 Ordering number : ENA0446 SCH2809 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained
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Original
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ENA0446
SCH2809
SCH1305)
SBS018)
A0446-6/6
a04466
a0446
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECH8621R Ordering number : EN8718 N-Channel Silicon MOSFET ECH8621R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.
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Original
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EN8718
ECH8621R
900mm2
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PDF
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|
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82306
Abstract: sanyo WG WG SANYO ECH8622R marking wg
Text: ECH8622R Ordering number : EN8719 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8622R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.
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Original
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ECH8622R
EN8719
900mm2
82306
sanyo WG
WG SANYO
ECH8622R
marking wg
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PDF
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Untitled
Abstract: No abstract text available
Text: 3HP04MH Ordering number : ENA0445 P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
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Original
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ENA0445
3HP04MH
900mm2
A0445-4/4
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PDF
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