abb cs 400
Abstract: THYRISTOR 1200 5SGS08D2500
Text: 5SGS 08D3000 5SGS 08D3000 Old part no. TG 907-800-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 800 I TAVm = 395 I TSM = 4 500
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08D3000
08D3000
08D2500
1768/138a,
TG/161/05
Jul-10
Jul-10
abb cs 400
THYRISTOR 1200
5SGS08D2500
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5SGS 08D2500
Abstract: 5SGS08D2500 abb cs 400 igcm abb 800 5SGS
Text: 5SGS 08D2500 5SGS 08D2500 Old part no. TG 907-800-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 800 I TAVm = 395
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08D2500
1768/138a,
TG/161/05a
Sep-11
5SGS 08D2500
5SGS08D2500
abb cs 400
igcm
abb 800
5SGS
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RB095T-40
Abstract: No abstract text available
Text: RB095T-40 Diodes Schottky barrier diode RB095T-40 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 8.0±0.2 12.0±0.2 5.0±0.2 ① 13.5MIN 1.2 zConstruction Silicon epitaxial planar
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RB095T-40
O-220)
O220FN
RB095T-40
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Untitled
Abstract: No abstract text available
Text: RB480Y-90 Diodes Schottky barrier diode RB480Y-90 zApplications Low current rectification zLand size figure Unit : mm zExternal dimensions (Unit : mm) 1.6±0.05 0.22±0.02 1.55 (2) 0.45 (1) 1.2±0.05 (3) 1.6±0.05 zFeatures 1) Ultra small mold type. (EMD4)
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RB480Y-90
15MAX
SC-75A
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SC1405D
Abstract: 1N4148 1N5819 IR7811 SC1405 SC1405DITSTRT tssop14 0.65 land pattern high speed mosfet driver Class-D
Text: SC1405D High Speed Synchronous Power MOSFET Smart Driver POWER MANAGEMENT Description Features The SC1405D is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through. Each driver is capable of driving a 3000pF load in 15ns rise/
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SC1405D
SC1405D
3000pF
MO-153,
TSSOP-14
1N4148
1N5819
IR7811
SC1405
SC1405DITSTRT
tssop14 0.65 land pattern
high speed mosfet driver Class-D
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RB160M-90
Abstract: No abstract text available
Text: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 0.15±0.03 1.6±0.1 3.05 2.6±0.1 ① zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability.
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RB160M-90
OD-123
RB160M-90
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RB160M-90
Abstract: No abstract text available
Text: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) Low IR
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RB160M-90
OD-123
RB160M-90
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Untitled
Abstract: No abstract text available
Text: RB095T-40 Diodes Schottky barrier diode RB095T-40 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 9.9 2.2 0.3 0.8 10.0 4.5±0.3 0.1 10.0±0.3 0.1 1.8±0.2 2.8±0.2 0.1 1.1 7.2 5.0±0.2 ① 8.0
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RB095T-40
O-220)
O220FN
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RB160M-90
Abstract: No abstract text available
Text: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) Low IR
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RB160M-90
OD-123
RB160M-90
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RB160M-90
Abstract: No abstract text available
Text: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU)
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RB160M-90
OD-123
RB160M-90
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Untitled
Abstract: No abstract text available
Text: RB095T-40 Diodes Schottky barrier diode RB095T-40 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 9.9 2.2 0.3 0.8 10.0 4.5±0.3 0.1 10.0±0.3 0.1 1.8±0.2 2.8±0.2 0.1 1.1 7.2 5.0±0.2 ① 8.0
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RB095T-40
O-220)
O220FN
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IR7811
Abstract: SC1405D 1N4148 1N5819 SC1405 SC1405DITSTRT tssop14 0.65 land pattern FDS6674A
Text: SC1405D High Speed Synchronous Power MOSFET Smart Driver POWER MANAGEMENT Description Features The SC1405D is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through. Each driver is capable of driving a 3000pF load in 15ns rise/
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Original
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SC1405D
SC1405D
3000pF
IR7811
1N4148
1N5819
SC1405
SC1405DITSTRT
tssop14 0.65 land pattern
FDS6674A
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620 tg diode
Abstract: 30V30
Text: Silicon Tuning Diode BB 620 • For Hyperband TV/VTR tuners. Bd I Type BB620 Ordering code Q 6 2 7 0 2 -B 4 0 3 Marking red/S M axim um ratings Vr h To, ^»tg S iem ens 30 20 -55.+125 -55.+150 V mA °C °C o o Reverse voltage Forward current Operating temperature range
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BB620
620 tg diode
30V30
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620 tg diode
Abstract: No abstract text available
Text: Silicon Variable Capacitance Diode BB 620 • For Hyperband TV/VTR tuners, Bd I Type Marking B B red S 6 2 0 Ordering Code tape and reel Pin Configuration Package1) 3 2 o - « - o Q 6 2 7 0 2 -B 4 0 3 S O D - 1 2 3 EHM0001 Maximum Ratings
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EHM0001
EHD07049
620 tg diode
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semikron skiip 792
Abstract: No abstract text available
Text: s e MIKRO n SKiiP 792 GB 170 - 370 WT/FT Absolute Maximum Ratings Sym bol Values Units 1700 1200 750 1500 - 5 5 . . . + 150 4000 620 1500 6480 210 V V A A °C V A A A kA2s 18 30 75 - 25 0 . . . + 85(70) V V kV/ns °C | C o n d itio n s 1> IGBT & Inve rse Diode
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VS210>
613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
semikron skiip 792
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RUR620
Abstract: TA49037
Text: H A R R IS RURD610, RURD615, RURD620, s E M, c o N o u c T o R r u r d 6 1 OS, RURD615S, RURD620S 6A, 100V - 200V Ultrafast Diodes April 1995 Features Packaging • Ultrafast with Soft R ecovery. <30ns
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RURD610,
RURD615,
RURD620,
RURD615S,
RURD620S
O-251
RURD610S,
RUR620
TA49037
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MA760
Abstract: 1N4150 FDLL4150
Text: SEMICONDUCTOR tm 1N4150 / FDLL4150 C O LO R B A N D M AR KING D E V IC E FD LL4150 1S T B A N D 2N D BAND B LA C K ORANGE High Conductance Ultra Fast Diode Sourced from Process 1R. See M MBD1201-1205 for characteristics. Absolute Maximum Ratings* t a = 2 5 ° C u nless o th e rw ise noted
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1N4150
FDLL4150
DO-35
LL-34
FDLL4150
MMBD1201-1205
A-200
A-400
MA760
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Untitled
Abstract: No abstract text available
Text: • TRANSISTOR MODULE 7 ^ 1 5 4 3 000S1A5 H13 QCA100A/QBB100A40/60 UL;E76102 M Q C A 1 0 0 A and Q B B 1 OOA is a dual Darlin gton power transistor module with two high speed, high power Darlington transis tors. Each transistor has a reverse paral leled fast recovery diode.
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000S1A5
QCA100A/QBB100A40/60
E76102
400/600V
QCA100A/QBB100A
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode IXSH 10N120AU1 SCSOA Capability Sym bol T e st C o n d itio n s v CES v CGR T = 25oCto150°C TJ = 25°C to 150°C; RGE= 1 MQ v v GEM Continuous T ransient ^C25 ^C90 *CM Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms SSOA RBSOA VGE = 15 V, Tj= 125°C, Hg= 150 O
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10N120AU1
O-247
25oCto150
-100/ps;
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MLL4148
Abstract: LL4448 Philips LL4148 st
Text: Philips Semiconductors Product specification High-speed diodes PMLL4148; PMLL4448 FEATURES DESCRIPTION • Sm all herm etically sealed glass SM D package The P M LL4148 and PM LL4448 are high-speed sw itching diodes fabricated in planar technology, and encapsulated in sm all herm etically sealed glass
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PMLL4148;
PMLL4448
LL4148
LL4448
MLL4148
LL4448 Philips
LL4148 st
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IN5359b
Abstract: in5353b IN5350B in5351b IN5355B 1N53638 IN5361B IN5345 1n53478 in5364B
Text: FAGOR "t ö ELECTRONICS 3459325 DDOoaa? □ |~ FAGOR E L E C T R O N IC S 98D 00237 1NS345 . 1N5364 FAGOR 9 T - H- ' S' 5 W Zener Diodes DO-27A Plastic Dimensions in mm. (inches) S § mis’ sU •H -H S ji t Voltage 8.7 to 33 V. I 1 (0.374) < 9.S ,
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1NS345
1N5364
DO-27A
1N5387B
1N5388B
34SC135S
1N5348
IN5359b
in5353b
IN5350B
in5351b
IN5355B
1N53638
IN5361B
IN5345
1n53478
in5364B
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N5363B
Abstract: N5356 N5373B n5366 N5380 N5375B N5380B 1N53888 N5383 N534
Text: 1N5344B - 1 N5388B VISHAY 5W ZENER DIODES /l i t e w i i I POWER SEMICONDUCTOR I Features Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal Vz is Standard 100% Tested Î c Mechanical Data
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1N5344B
-1N5388B
MIL-STD-202,
1N53fi5R.
1N5357B
DS21407
N5344B-1
N5388B
N5363B
N5356
N5373B
n5366
N5380
N5375B
N5380B
1N53888
N5383
N534
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1RFI640G
Abstract: wc mica IRFI640G
Text: International |k 1Rectifier PD-9.649A IRFI640G HEXFET® Power MOSFET • • • • • Isolated Package High Voitage lsolatìon= 2.5KVRMS CD Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^ ds s - 2 0 0 V ^DS on = 0 .1 8 Í2
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IRFI640G
O-220
1RFI640G
wc mica
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FLD150F1CJ
Abstract: thermoelectric fld150
Text: FLD 150F1CJ FEATURES • Bit rate capability to 620 Mb/s • Span to 100 Km • Narrow spectral width due to distributed feed-back DFB type structure • Hermetically sealed 14 pin dual-in-line package with monitor photodiode, thermoelectric cooler, thermistor
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150F1CJ
FLD150F1CJ
374T751J
374T7SL.
thermoelectric
fld150
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