61B MARKING Search Results

61B MARKING Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

61B MARKING Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SUB610 Abstract: No abstract text available Text: SUB610 Semiconductor Schottky Barrier Diode Features • • • • Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. Marking SUB610 61B Package Code SOT-363 Outline Dimensions	Original	PDF	SUB610 OT-363 KSD-D5S004-000 SUB610
bcx71 Abstract: No abstract text available Text: BCW61 BCX71 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW 61A BA BCW 61B BB BCW 61C BC BCX71G BG BCX71H BH BCX71J BJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND	Original	PDF	BCW61 BCX71 BCX71G BCX71H BCX71J BCW60 BCX70 OT-23 BCX71
AX06 Abstract: U181 VR-61B T125U Text: バリスタ挿入品（THD） Varistor •外形寸法図 OUTLINE DIMENSIONS VR-61B A φ0.6 ±0.05 Package : AX06 ＋0.5 27.5 ±2 5 −0 φ2.6 ±0.1 27.5 ±2 ●捺印面展開図 61 98 単位：mm 外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照	Original	PDF	VR-61B Junctio25 T125unless AX06Package AX06 U181 T125U
VR-61BA Abstract: VR-61B Text: バリスタ挿入品（THD） Varistor •外形寸法図 OUTLINE DIMENSIONS VR-61B A φ0.6 ±0.05 Package : AX06 ＋0.5 27.5 ±2 5 −0 φ2.6 ±0.1 27.5 ±2 ●捺印面展開図 61 98 単位：mm 外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照	Original	PDF	VR-61B T125unless VR-61BA
Untitled Abstract: No abstract text available Text: BCW 61 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse	Original	PDF	OT-23 O-236) UL94V-0
VPS05178 Abstract: BCV61 Text: BCV 61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking	Original	PDF	VPS05178 EHA00012 OT-143 EHN00002 Sep-30-1999 EHP00940 EHP00942 VPS05178 BCV61
Untitled Abstract: No abstract text available Text: BCW 61 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse	Original	PDF	OT-23 O-236) UL94V-0
Untitled Abstract: No abstract text available Text: SUB610 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature	Original	PDF	SUB610 OT-363 06-JAN-14 KSD-D5S004-002
SUB610 Abstract: No abstract text available Text: SUB610 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature	Original	PDF	SUB610 OT-363 25-AUG-10 KSD-D5S004-001 SUB610
Untitled Abstract: No abstract text available Text: SUB610 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature	Original	PDF	SUB610 OT-363 25-AUG-10 KSD-D5S004-001
g1 TRANSISTOR SMD MARKING CODE Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs	Original	PDF	BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE
c639 Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423 Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05	Original	PDF	3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC	Original	PDF	OT-23 BCW61A BCW61B BCW61C BCW61D BCW61A BCW61C C-120
BCW61A Abstract: BCW61B BCW61C BCW61D BCw6 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC	Original	PDF	OT-23 BCW61A BCW61B BCW61C BCW61D BCW61A BCW61C C-120 BCW61B BCW61D BCw6

MARKING 68W SOT-23 Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23 Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06	Original	PDF	25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
BCW65C Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A	OCR Scan	PDF	OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 BCW65C FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P
LC marking code transistor Abstract: transistor marking code BCW61A BCW61 BCW61B BCW61C BCW61D TRANSISTOR BCW61 marking code ER transistor Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation	OCR Scan	PDF	BCW61A/B/C/D KS5086 OT-23 BCW61B BCW61C BCW61 -50mA, -10mA, LC marking code transistor transistor marking code BCW61A BCW61D TRANSISTOR BCW61 marking code ER transistor
F1K marking Abstract: No abstract text available Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature	OCR Scan	PDF	BCW61A/B/C/D KS5086 BCW61 F1K marking
Untitled Abstract: No abstract text available Text: BCW61A BCW61B BCW61C BCW61D IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 2A Pin configuration 1 = BASE	OCR Scan	PDF	BCW61A BCW61B BCW61C BCW61D BCW61A BCW61C
61B20 Abstract: No abstract text available Text: BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN nun 0.1 + Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C 61B20
KST3906 samsung Abstract: BCW71 AG LC-1010 Text: SAMSUNG ELECTRONICS INC bOE D • TTbMlME 0011523 TTO HSriGK TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Condition Device and Polarity Marking NPN KST06(1G) KST05(1H) KSC1623(C1X) PNP	OCR Scan	PDF	OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G KST3906 samsung BCW71 AG LC-1010
Untitled Abstract: No abstract text available Text: CDIL BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PA CKA G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m 3.0 2.8 0.14 0.48 I 0.38 t1 3 I 2.4 1I Pin configuration	OCR Scan	PDF	BCW61A BCW61B BCW61C BCW61D BCW61A BCW61C
ferranti Abstract: FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 Text: FERRANTI semiconductors FMMT-A20 NPN S ilico n Planar Small Signal Transistor D E S C R IP T IO N These devices ere intended for sm all and m edium signal am plification applications from d.c. to radio frequencies. Encapsulated in the popular S O T -23 package these devices	OCR Scan	PDF	FMMT-A20 OT-23 FMMT5087 BCW69 BCW70 BCX71G BCX71H BCX71J BCX71K ferranti FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
TRANSISTOR A70 Abstract: marking A70 SOT 213 BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT-A70 Text: 4 FERRANTI semiconductors F M M T -A 70 PNP S ilicon Planar Sm all Signal T ransistor D E S C R IP T IO N T h is device is intended for sm all and m e diu m sign a l a m plification a p p lica tio n s from d.c. to radio frequencies. E ncapsu late d in the p opu lar SO T-23 p a c k a g e the device is	OCR Scan	PDF	FMMT-A70 OT-23 FMMT5087 BCW69 BCW70 BCX71G BCX71H BCX71J TRANSISTOR A70 marking A70 SOT 213 BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT-A70

61B MARKING Search Results

61B MARKING Result Highlights (5)

61B MARKING Datasheets Context Search

SUB610

bcx71

AX06

VR-61BA

Untitled

VPS05178

Untitled

Untitled

SUB610

Untitled

g1 TRANSISTOR SMD MARKING CODE

c639

Untitled

BCW61A

MARKING 68W SOT-23

BCW65C

LC marking code transistor

F1K marking

Untitled

61B20

KST3906 samsung

Untitled

ferranti

TRANSISTOR A70