Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    618 MOSFET Search Results

    618 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    618 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S7170N MRF8S7170NR3 2/2014Semiconductor,

    LTC1172

    Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
    Text: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents


    Original     		PDF FMMT718 OT223 FMMT618/718 FMMT618 FMMT619 BCP56 FMMT619s, LTC1172 CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 push pull converter 70V motor controller IRF830 inverter irf840

    K3723

    Abstract: ic MARKING QG MARKING QG SMD IC MARKING NC 2SK3723 SMD Transistors nc
    Text: Transistors IC SMD Type N-channel Enhancement Mode MOSFET 2SK3723 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2


    Original     		PDF 2SK3723 O-263 K3723 K3723 ic MARKING QG MARKING QG SMD IC MARKING NC 2SK3723 SMD Transistors nc

    S2N7002KT

    Abstract: n-channel enhancement mosfet S2N7002
    Text: S2N7002KT N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES   Low Gate Charge for Fast Switching. ESD Protected Gate. APPLICATIONS   Power Management Load Switch


    Original     		PDF S2N7002KT OT-523 50BSC 154mA 09-Apr-2010 S2N7002KT n-channel enhancement mosfet S2N7002

    Si7384DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7384DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7384DP S-60147Rev. 13-Feb-06

    Si4384DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4384DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4384DY S-50836Rev. 16-May-05

    NTE2954

    Abstract: No abstract text available
    Text: NTE2954 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avalanche Tested D Imporved dv/dt Capability Absolute Maximum Ratings: TC = +25°C unless otherwise specified


    Original     		PDF NTE2954 147nC 300pF NTE2954

    Si7384DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7384DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7384DP 18-Jul-08

    Si4384DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4384DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4384DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7684DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7684DP 18-Jul-08

    TLP795G

    Abstract: PF 1014 pf1014
    Text: TOSHIBA PHOTO RELAY TLP795G Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP795G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


    Original     		PDF TLP795G TLP795G 150mA 5000Vrms PF 1014 pf1014

    NTA7002NT1G

    Abstract: NTA7002N NTA7002NT1 SC-75
    Text: NTA7002N Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75 Features •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available RDS on Typ @ VGS V(BR)DSS


    Original     		PDF NTA7002N SC-75 NTA7002N/D NTA7002NT1G NTA7002N NTA7002NT1 SC-75

    SC-89

    Abstract: No abstract text available
    Text: WTX7002 N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Low Gate Charge for Fast Switching * ESD Protected Gate Drain 3 APPLICATIONS: * Power Management Load Switch * Portable Applications such as Cell Phones, Media Players,


    Original     		PDF WTX7002 SC-89 25-Jan-09 SC-89 50BSC

    GF2208

    Abstract: 10vtD
    Text: GF2208 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 13A H C N TREENFET G SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 Dimensions in inches and (millimeters) 4 0.020 (0.51) 0.013 (0.33) 0.050 (1.27)


    Original     		PDF GF2208 MIL-STD-750, High500 GF2208 10vtD

    Untitled

    Abstract: No abstract text available
    Text: GF2208 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 13A H C N ct E ET u R d T NF w Pro Ne GE TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 0.05 (1.27)


    Original     		PDF GF2208

    Untitled

    Abstract: No abstract text available
    Text: GF2208 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 13A H C N t E ET c u R T NF rod P GE SO-8 New TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches


    Original     		PDF GF2208

    Untitled

    Abstract: No abstract text available
    Text: GF2208 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 13A H C N TRENFET GE TM SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) 0.244 (6.20) 0.228 (5.79) 1 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.019 (0.48) x 45 °


    Original     		PDF GF2208 MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: GF2208 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 13A H C N t E ET c u R T NF rod P GE SO-8 New TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches


    Original     		PDF GF2208

    Untitled

    Abstract: No abstract text available
    Text: GFP70N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 70A H C N TRENFET GE TM t c u rod P New D TO-220AB 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) Dia. 0.148 (3.74) 0.415 (10.54) Max. 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) D G PIN D


    Original     		PDF GFP70N03 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG SHD850001 6A-Peak Low Side MOSFET Driver Bipolar/CMOS/DMOS Process Features: • CMOS Construction • Similar to Industry Part Number MIC4420 • Low Output Impedance, 2.5 Ohms • Latch-Up Protected; Will Withstand > 500 mA Reverse Output Current


    OCR Scan     		PDF SHD850001 MIC4420 CerPack-10

    1RL630A

    Abstract: IRL630
    Text: IRL630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVDSs Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A M ax. @ VDS= 200V


    OCR Scan     		PDF IRL630A O-220 1RL630A IRL630

    DD 127

    Abstract: No abstract text available
    Text: v G eneral S e m ic o n d u c t o r GFB70N03 ♦ N-Channel Enhancement-Mode MOSFET V d s 30V R d S ON 8mii Id 70A Go TO-263AB 0.160 (4.06) 0.190(4.83) 0.380(9.65) 0.420 (10.67) 0.045 (1.14) ' 0.055 (1.40) 0.21 (5.33) I*- Min. -►j T z: 0.055 (1.39) 0.320 (8.13)


    OCR Scan     		PDF GFB70N03 O-263AB O-263 MIL-STD-750, DD 127

    c617 DIODE

    Abstract: No abstract text available
    Text: PD - 9.1258C International I R Rectifier IRLML2803 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • SOT-23 Footprint • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching V dss =


    OCR Scan     		PDF OT-23 1258C IRLML2803 c617 DIODE

    GFP70N03

    Abstract: No abstract text available
    Text: G en e r a l S e m ic o n d u c t o r v GFP70N03 N-Channel Enhancement-Mode MOSFET V d s 30V R d S ON 8mi2 Id 70A TO-220AB 0.185(4.70) 0.170(4.31) 0.154 (3.91) „ 0.415(10.54) Max. ' 0.142(3.60) 0.055 (1.39) .0.045(1.14) 0.113(2.87) . 0.102(2.56) Features


    OCR Scan     		PDF GFP70N03 O-220AB GFP70N03