Untitled
Abstract: No abstract text available
Text: KM 6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History H is to ry D ra ft D a ta 0.0 Initial dra ft A ug ust 12th 1995 1.0 Finalize - O ne d a tashe et for com m e rcial and industrial part. A pril 15th 1996 2.0
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KM6161000B
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TT1102
Abstract: 100PF
Text: Preliminary CMOS SRAM 6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The 6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536
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KM6161000BLI
64Kx16
550pW
275nW
660mW
I/01-I/08
KM6161000BLTI/LTI-L:
400mil
KM6161000BLRI/LR1-L:
TT1102
100PF
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km6161000blti
Abstract: FTC 960 6161000BL
Text: 6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • • The 6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature
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KM6161000B
64Kx16
64Kx16
44-TSOP
I/01-7
7CJb4142
023bMcl
km6161000blti
FTC 960
6161000BL
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Untitled
Abstract: No abstract text available
Text: 6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION • Process Technology : Poly Load • Organization : 64K x16 _ • Data Byte Control : LB=I/O i ~8, UB=I/09~16 • Power Supply Voltage : 4.5~5.5V • Low Data Retention Voltage : 2V Min
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KM6161000B
44-TSOP2-4QOF/R
6161000B
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM 6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION •Industrial Temperature Range : -40 to 85°C The 6161000BLI/LI-L is a 1,048,576-bit high speed >Fast Access Time : 70/100 ns max.
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KM6161000BLI
64Kx16
KM6161000BLI/LI-L
576-bit
550uW
6161000BLI/LI-L
660mW
Q021271
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Untitled
Abstract: No abstract text available
Text: 6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min
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KM6161000B
64Kx16
64Kx16
44-TS0P
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Untitled
Abstract: No abstract text available
Text: 6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996
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KM6161000B
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Untitled
Abstract: No abstract text available
Text: 6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft August 12th 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15th 1996 Final
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KM6161000B
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a13e
Abstract: No abstract text available
Text: 6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min
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PDF
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KM6161000B
64Kx16
64Kx16
44-TSOP
a13e
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