FW215
Abstract: No abstract text available
Text: Ordering number:EN5481 N-Channel Silicon MOSFET FW215 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2129 [FW215] 5 4 Specifications 1.27 0.595 0.43 0.1 1.5 5.0 1:Source 1 2:Gate 1 3:Source 2 4:Gate 2 5:Drain 2
|
Original
|
EN5481
FW215
FW215]
FW215
|
PDF
|
TA1239
Abstract: 2SC5305 2SC5305LS CP12A TA-1239
Text: Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.
|
Original
|
ENN5884A
2SC5305LS
2079D
2SC5305]
O-220FI
TA1239
2SC5305
2SC5305LS
CP12A
TA-1239
|
PDF
|
TA-1239
Abstract: VCBO-1200V EN5884 2SC5305 TA1239
Text: Ordering number:EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm
|
Original
|
EN5884
2SC5305
2079B
2SC5305]
O-220FI
TA-1239
VCBO-1200V
EN5884
2SC5305
TA1239
|
PDF
|
SS 550 D331
Abstract: LC75396NE A10704 A1070 A10709 LC75396N 6663p LRD35 1F S 36 1F56
Text: 注文コードNo.N5 9 1 4 三洋半導体データシート N LC75396NE CMOS LSI 1チップ電子ボリウムシステム LC75396NEはボリウム, バランス, 5バンドイコライザ, 入力切換えの各機能をシリアルデータ入力によりコントロールでき
|
Original
|
LC75396NE
LC75396NE,
0dB-79dB
61598TS
B8-3711
Ta-3075,
VDD10V,
T00095
80kHz
SS 550 D331
LC75396NE
A10704
A1070
A10709
LC75396N
6663p
LRD35
1F S 36
1F56
|
PDF
|
FW211
Abstract: No abstract text available
Text: Ordering number:EN5579A N-Channel Silicon MOSFET FW211 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. unit:mm 2129 [FW211] 5 4 0.595 1.27 0.1 1.5 5.0 1:Source 1 2:Gate 1 3:Source 2 4:Gate 2 5:Drain 2 6:Drain 2
|
Original
|
EN5579A
FW211
FW211]
FW211
|
PDF
|
ta1238
Abstract: TA-1238 2SC5304 EN5883
Text: Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm
|
Original
|
EN5883
2SC5304
2079B
2SC5304]
O-220FI
ta1238
TA-1238
2SC5304
EN5883
|
PDF
|
ta1232
Abstract: FTS2001
Text: Ordering number:EN5694 N-Channel Silicon MOSFET FTS2001 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. · Mount height 1.1mm. unit:mm 2147 3.0 [FTS2001] 0.975 0.65 5 1 4 6.4 0.125 1.0 1.2max 0.25 0.1 Specifications
|
Original
|
EN5694
FTS2001
FTS2001]
ta1232
FTS2001
|
PDF
|
ta1238
Abstract: TA-1238 2SC5304 2SC5304LS
Text: Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.
|
Original
|
ENN5883A
2SC5304LS
2079D
2SC5304]
O-220FI
ta1238
TA-1238
2SC5304
2SC5304LS
|
PDF
|
LC7185-8750
Abstract: 8750 CH33 16*32 LED Matrix 135075 13.5675 24MHZ DIP30S LC7185 sg 16 diode
Text: 注文コードNo. N 3356A 三 洋 半 導 体 デ ー タ シ ート 半導体ニュース No.3356 とさしかえてください。 CMOS LSI LC7185-8750 −CBトランシーバ用PLL 周波数シンセサイザ＋コントローラ 用途 CBトランシーバに最適な27MHz帯PLL周波数シンセサイザLSI。
|
Original
|
LC7185-8750
CB27MHzPLLLSI
LC7185-8750CBPLL
16MHzVOC
LC7185-8750
51min
95max
SANYODIP30S
400mil
O1806
8750
CH33
16*32 LED Matrix
135075
13.5675
24MHZ
DIP30S
LC7185
sg 16 diode
|
PDF
|
FW215
Abstract: TA-0975
Text: Ordering number:EN5481 N-Channel Silicon MOSFET FW215 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2129 [FW215] 5 4 Specifications 1.27 0.595 0.43 0.1 1.5 5.0 1:Source 1 2:Gate 1 3:Source 2 4:Gate 2 5:Drain 2
|
Original
|
EN5481
FW215
FW215]
FW215
TA-0975
|
PDF
|
