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    613 MOSFET Search Results

    613 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    613 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LNK 606 DG

    Abstract: lnk605 lnk606 pI LNK605 SO-8 Lnk 616pg LinkSwitch-II ee16 transformer specification LNK603 lnk616 smd diode K7
    Text: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry


    Original     		LNK603-606/613-616 LNK61X LNK 606 DG lnk605 lnk606 pI LNK605 SO-8 Lnk 616pg LinkSwitch-II ee16 transformer specification LNK603 lnk616 smd diode K7 PDF

    lnk605

    Abstract: lnk606 lnk 305 pn Lnk 616pg LNK 602 pn junction DIODE 1N4007 fr102 diode LNK 606 DG LinkSwitch-II LNK615
    Text: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry


    Original     		LNK603-606/613-616 LNK61X lnk605 lnk606 lnk 305 pn Lnk 616pg LNK 602 pn junction DIODE 1N4007 fr102 diode LNK 606 DG LinkSwitch-II LNK615 PDF

    LNK605D

    Abstract: lnk 305 pn lnk616 LNK 616PG LNK605 LNK616P LNK606P lnk606 LNK613 LNK615
    Text: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry


    Original     		LNK603-606/613-616 LNK61X LNK605D lnk 305 pn lnk616 LNK 616PG LNK605 LNK616P LNK606P lnk606 LNK613 LNK615 PDF

    LNK606DG

    Abstract: lnk606 LNK606PG LNK616DG cccv based battery charge controller lnk616 lnk614 LinkSwitch-II lnk603 LNK613DG
    Text: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry


    Original     		LNK603-606/613-616 LNK61X LNK606DG lnk606 LNK606PG LNK616DG cccv based battery charge controller lnk616 lnk614 LinkSwitch-II lnk603 LNK613DG PDF

    Untitled

    Abstract: No abstract text available
    Text: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry


    Original     		LNK603-606/613-616 LNK61X PDF

    mosfet SMD 34 DG

    Abstract: 1N4007/smd diode a7
    Text: LNK603-606/613-616 LinkSwitch-II Family Energy-Eficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simpliies CV/CC Converters • Eliminates optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry


    Original     		LNK603-606/613-616 LNK61X mosfet SMD 34 DG 1N4007/smd diode a7 PDF

    lnk603

    Abstract: LNK 606 DG lnk616 pn junction DIODE 1N4007 LNK 616 lnk606 lnk605 ee13 transformer LNK605D LinkSwitch-II
    Text: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry


    Original     		LNK603-606/613-616 LNK61X lnk603 LNK 606 DG lnk616 pn junction DIODE 1N4007 LNK 616 lnk606 lnk605 ee13 transformer LNK605D LinkSwitch-II PDF

    lnk606

    Abstract: character diode 1N4007 LNK613 lnk616 lnk605 Lnk 616pg LinkSwitch-II LNK605D LNK614 LNK604
    Text: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry


    Original     		LNK603-606/613-616 LNK61X lnk606 character diode 1N4007 LNK613 lnk616 lnk605 Lnk 616pg LinkSwitch-II LNK605D LNK614 LNK604 PDF

    SKH122

    Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
    Text: INDEX Order Code Description Manufacturer 688-113 688-125 688-405 688-137 688-149 688-101 743-471 548-613 548-625 — — — — — — 795-987 670-820 — — — — — 663-335 663-293 795-331 687-625 794-788 794-776 796-413 795-422 795-410 795-483 796-300


    Original     		SAB-C505C-LM: SAB-C515C-LM: SAB-C167CR-LM: 16-bit SAE81C90-N: SAE81C91-N: SAB-C504-LM: BTS149: BSP350: BSP452: SKH122 SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v PDF

    Hdd spindle motor

    Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA
    Text: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts


    Original     		O-220CFM H5N5004PL H5N5005PL RJL5012DPP O-220FN RJL5013DPP RJL5014DPP RJL5014DPK Hdd spindle motor HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA PDF

    IGBT Electrostatic Handling Precautions

    Abstract: AN4502 Dynex Semiconductor BSI 208
    Text: AN4502 Application Note AN4502 IGBT Electrostatic Handling Precautions Application Note Replaces September 2000 version, AN4502-3.0 AN4502-3.1 July 2002 The IGBT has been developed to combine the properties of both MOSFET and Bipolar devices. This overcomes some of the


    Original     		AN4502 AN4502 AN4502-3 IGBT Electrostatic Handling Precautions Dynex Semiconductor BSI 208 PDF

    STR 6656

    Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    ic str wg 252

    Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    HV9961

    Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
    Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		product25 HV9961 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509 PDF

    irf610

    Abstract: power MOSFET IRF610 irf610 mosfet pulse electronics era IRF61 irf610 samsung
    Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		IRF610/611/612/613 IRF610 IRF61 IRF612 IRF613 power MOSFET IRF610 irf610 mosfet pulse electronics era irf610 samsung PDF

    IRF013

    Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
    Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		IRF610/611/612/613 O-220 IRF610 IRF611 IRF612 IRF613 IRF013 D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q 613 33A PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D 7 ^ 4 1 4 2 GG1247Ü 613 m S H G K N-CHANNEL POWER MOSFET SSP1N60/1N55 FEATURES • • • • • • TO-220 Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		GG1247Ã SSP1N60/1N55 O-220 SSP1N60 SSP1N55 PDF

    IRF610

    Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
    Text: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power


    OCR Scan     		IRF610-613 MTP2N18/2N20 O-22QAB IRF610 IRF611 IRF612 IRF613 MTP2N18 NITP2N20 IRF610/612 IRF610 IRF612 irf P 611 IRF611 IRF613 MTP2N18 MTP2N20 PDF

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


    OCR Scan     		O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet PDF

    1rf610

    Abstract: f613 power MOSFET IRF610 IRF613
    Text: 2 H A R R IS IRF610/611/612/613 IRF61OR/611R/612R/613R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package F e a tu re s T O -2 2 0 A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • fDS on) = l-S ft a nd 2.417 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		IRF610/611/612/613 IRF61OR/611R/612R/613R IRF610, IRF611, IRF612, IRF610R, IRF611R, IRF612R IRF613R F610R 1rf610 f613 power MOSFET IRF610 IRF613 PDF

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b4E » • 7^4142 O O l E l b T 3 ST « S M Ù K N-CHANNEL POWER MOSFETS IRF610/611 /612/613 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		IRF610/611 IRF610 IRF611 IRF612 IRF613 IRF610/611/612/613 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0054003 33 H A R R IS 2 77 ■ HAS IRF610/611/612/613 IRF61 OR/611R/612R/613R N-Channel Power MQSFETs Avalanche Energy Rated* August 1991 Features Package T0 -22 0A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • ros on = 1-5 i i and 2 -4 ii • Single Pulse Avalanche Energy Rated*


    OCR Scan     		IRF610/611/612/613 IRF61 OR/611R/612R/613R IRF610, IRF611, IRF612, IRF610R, IRF611R, IRF612R F613R PDF

    IRF610

    Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
    Text: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power


    OCR Scan     		IRF610-613 MTP2N18/2N20 IRF610/612 NITP2N20 MTP2N18 IRF611/613 PCU100F IRF610 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 PDF

    1RF610

    Abstract: IRFS10 IRF611 IRF N-Channel Power MOSFETs IRF612 IRF613 IRF610R IRF611R IRF612R IRF613R
    Text: 2 H A R R I S I R I R F 6 1 O F R 6 1 / 6 / 6 1 1 R 1 / 6 1 1 / 6 2 1 R 2 / 6 / 6 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package TO -22D A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • l'DSion) = 1-5H and 2.4i l


    OCR Scan     		IRF610/611/612/613 IRF61 OR/611R/612R/613R 1RF610, IRF611, IRF612, IRF613 IRF610R, IRF611R, IRF612R 1RF610 IRFS10 IRF611 IRF N-Channel Power MOSFETs IRF612 IRF610R IRF611R IRF613R PDF