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    6116-2 CMOS RAM Search Results

    6116-2 CMOS RAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    5962-8670505RA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    5962-8670511UA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    5962-8861103LA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    6168LA20LB Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation

    6116-2 CMOS RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


    Original     		PDF 2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128

    SR06

    Abstract: V3089 6116LA25 DSC-3089/06
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, IDT6116SA IDT6116LA SR06 V3089 6116LA25 DSC-3089/06

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116

    IDT6116LA

    Abstract: IDT6116SA SO24-2
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, IDT6116LA IDT6116SA SO24-2

    6116LA45

    Abstract: 6116LA120 chip diagram of ram chip 6116 6116LA25 6116 static RAM chip IDT6116SA/LA 6116 static RAM 150ns 6116 memory DIP-24 IDT6116LA
    Text: CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT6116SA IDT6116LA Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA45 6116LA120 chip diagram of ram chip 6116 6116LA25 6116 static RAM chip IDT6116SA/LA 6116 static RAM 150ns 6116 memory DIP-24 IDT6116LA

    6116LA45

    Abstract: IDT6116LA IDT6116SA SO24-2
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116LA45 IDT6116LA IDT6116SA SO24-2

    6116 CMOS RAM

    Abstract: 6116LA45 IDT6116SA/LA IDT6116LA IDT6116SA SO24-2 IDT 6116 memory chip
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, 6116 CMOS RAM 6116LA45 IDT6116SA/LA IDT6116LA IDT6116SA SO24-2 IDT 6116 memory chip

    Untitled

    Abstract: No abstract text available
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833,

    chip diagram of ram chip 6116

    Abstract: ci 6116 RAM 6116
    Text: SGS-THOMSON KLH Tr[^© iìOa©S M K 6116 MK6116, MKI6116, MK6116L, MKI6116L (N/S - 15/20/25 2 K X 8 CMOS STATIC RAM • BYTEWYDE 2K x 8 CMOS STATIC RAM. .« lili ■ +5 VOLT ONLY WRITE/READ. ■ HIGH PERFORMANCE WITH LOW CMOS STANDBY POWER. PIN NAMES


    OCR Scan     		PDF MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, chip diagram of ram chip 6116 ci 6116 RAM 6116

    Untitled

    Abstract: No abstract text available
    Text: March 1994 HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES . . ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY .120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY: 2.0 (xW (TYP) DATA RETENTION : 4 (TYP)


    OCR Scan     		PDF 6116/Rev

    6116 RAM

    Abstract: 6116 6116 static ram SRAM 6116 ram 6116 6116 memory HM6116 6116 sram 6116 CMOS RAM decoder 6116
    Text: Illiïü HM 6116 DATA SHEET_ 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY : 120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY : 2.0 nW (TYP) DATA RETENTION : 4 fiW (TYP)


    OCR Scan     		PDF 6116/Rev 6116 RAM 6116 6116 static ram SRAM 6116 ram 6116 6116 memory HM6116 6116 sram 6116 CMOS RAM decoder 6116

    ES 61162

    Abstract: No abstract text available
    Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C


    OCR Scan     		PDF Sflbfl45b HM6116/Rev ES 61162

    6116 RAM

    Abstract: SRAM 6116 6116 6116 memory chip diagram of ram chip 6116 6116 memory chip 6116 SRAM HM6116 ram 6116 6ll6
    Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C


    OCR Scan     		PDF 6116/Rev 6116 RAM SRAM 6116 6116 6116 memory chip diagram of ram chip 6116 6116 memory chip 6116 SRAM HM6116 ram 6116 6ll6

    hm6116l -70

    Abstract: 6116 RAM chip diagram of ram chip 6116 6116 6116 CMOS RAM memory 6116 SRAM 6116 6116 RAM expansion circuit HM 6116 RAM 6116 static RAM chip
    Text: _ MTE D li 5 fifc>fl45 b 0 D Q 1 3 1 Ô Q37 • i l M H S T tj^ - z .3 - /^ MATRA M H S ifllll I V r i H September 1990 HM 6116 DATA SHEET_ 2 kx 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESSS TIME MILITARY : 120 ns max


    OCR Scan     		PDF DG0131Ã hm6116l -70 6116 RAM chip diagram of ram chip 6116 6116 6116 CMOS RAM memory 6116 SRAM 6116 6116 RAM expansion circuit HM 6116 RAM 6116 static RAM chip

    6116 RAM

    Abstract: ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L
    Text: MHS lllll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM MAY 1986 Features • MILITARY/INDUSTRIAL : FAST ACCESS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SUPPLY CURRENT : 60 mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


    OCR Scan     		PDF 6116/6116L 6116 RAM ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L

    STATIC RAM 6264

    Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
    Text: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)


    OCR Scan     		PDF 6116/SIS 6116H 45/55/70ns 6116H) 100/120/150ns 250mW STATIC RAM 6264 RAM 6264 6264 EPROM 6116 RAM 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns

    4464 ram

    Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
    Text: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,


    OCR Scan     		PDF 8816H 4464 ram us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory

    6116 block diagram

    Abstract: No abstract text available
    Text: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C


    OCR Scan     		PDF F12-H F0F11 6116 block diagram

    HY6116-10

    Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
    Text: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high


    OCR Scan     		PDF t-46-23-12 HY6116 2048-word HY6116-10 HY6116-12 HY6116-15 HY6116 100ns 120ns 150ns HY6116-10 HY6116-12 HY6116-15 Hyundai Semiconductor

    RAM MK6116

    Abstract: MK6116-15 6116 ram 2k MK6116-25 DIP-24 MK6116 FZJ 105
    Text: SGS-THOMSON M K 6116 M MK6116, MKI6116, MK6116L, MKI6116L N/S - 15/20/25 2 K X 8 C M O S STATIC RAM i BYTEWYDE 2K x 8 CM OS STATIC RAM. £.j U i +5 VOLT ONLY WRITE/READ. i 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC. i EQUAL W RITE AND READ CYCLE TIMES.


    OCR Scan     		PDF MK6116 MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, RAM MK6116 MK6116-15 6116 ram 2k MK6116-25 DIP-24 FZJ 105

    CY6116-35

    Abstract: 6116 RAM expansion circuit
    Text: CY6116 CYPRESS SEMICONDUCTOR " 2,048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected The C Y 6116 is a high-perform ance CM O S Static RAM organized as 2048 w ords by 8 bits. Easy m em ory expansion is provided by


    OCR Scan     		PDF CY6116 CY6116-35 6116 RAM expansion circuit

    2048x8 RAM

    Abstract: 6216 static ram
    Text: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec


    OCR Scan     		PDF 2048x8 S10307FDS 110ns MA6116) MA6216) 5x10s 5x1010 100pA ma6H6/6216 2048x8 RAM 6216 static ram

    HM6116P-3

    Abstract: HM6116LP HM6116LP-2 HM6116LP-3 hm6116p-4 ic 6116 HM6114FP-4 HM6116LP-3
    Text: Maintenance Only HM6116 Series 2048-word x 8-bit High Speed CMOS Static RAM HM6116P S erie s •FEA TURES • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and Low Power Operation Standby: 100/jW typ. 10/uW (typ.) (L-version) 120ns/150ns/200ns (max.)


    OCR Scan     		PDF HM6116 2048-word 120ns/150ns/200ns HM6116P 100/jW 10/uW 200mW 175mW P-141 HM6116P-2 HM6116P-3 HM6116LP HM6116LP-2 HM6116LP-3 hm6116p-4 ic 6116 HM6114FP-4 HM6116LP-3

    6116A

    Abstract: CDM6116
    Text: G E SOLID STATE 17E D • 3ä75Gfil QQES027 =! Hlgh-Reliability CMOS LSI Devices - CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: ■ F u lly sta tic op eratio n ■ S ingle p o w e r sup ply: 4.5 to 5.5 V


    OCR Scan     		PDF 75Gfil QQES027 CDM6116AC/3 2048-Word 24-load 28-terminalleadless 6116A CDM6116