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    60V TRANSISTOR NPN 2A Search Results

    60V TRANSISTOR NPN 2A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    60V TRANSISTOR NPN 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXTN2010GTA

    Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223 ZXTN2010GTA ZXTN2010G ZXTN2010GTC Bv 42 transistor

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223

    ZXTN

    Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223 INFORMAT26100 ZXTN ZXTN2010GTA ZXTN2010G ZXTN2010GTC

    ZX5T851G

    Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223 ZX5T851G ZX5T851GTA ZX5T851GTC Bv 42 transistor

    X5T851

    Abstract: bv 42 TRANSISTOR equivalent
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223 522-ZX5T851GTA ZX5T851GTA X5T851 bv 42 TRANSISTOR equivalent

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z

    ZXTN2010A

    Abstract: ZXTN2010ASTOA ZXTN2010ASTZ
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ

    IC2A

    Abstract: marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ IC2A marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ

    npn 120v 10a transistor

    Abstract: ZX5T851Z ZX5T851ZTA
    Text: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T851Z npn 120v 10a transistor ZX5T851Z ZX5T851ZTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010A ZXTN2010ASTOA ZXTN2010AST)

    ZXTN2010ZTA

    Abstract: ZXTN2010Z 0019E
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z ZXTN2010ZTA ZXTN2010Z 0019E

    X5T851

    Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
    Text: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T851A ZX5T851ASTOA ZX5T851ASTZ X5T851 ZX5T851A ZX5T851ASTOA ZX5T851ASTZ

    Untitled

    Abstract: No abstract text available
    Text: ZX5T851G 60V NPN M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223

    Untitled

    Abstract: No abstract text available
    Text: ZX5T851A 60V NPN LOW SATURATION M EDIUM POWER TRANSISTOR IN E-LINE SUM M ARY BV CEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC


    Original     		PDF ZX5T851A

    ZXTP19060CFF

    Abstract: ZXTN19060CFF ZXTN19060CFFTA
    Text: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN19060CFF OT23F, ZXTP19060CFF OT23F ZXTP19060CFF ZXTN19060CFF ZXTN19060CFFTA

    ZXTN19060CFF

    Abstract: ZXTN19060CFFTA ZXTP19060CFF marking 1E4
    Text: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN19060CFF OT23F, ZXTP19060CFF OT23F ZXTN19060CFF ZXTN19060CFFTA ZXTP19060CFF marking 1E4

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN19060CFF OT23F, ZXTP19060CFF OT23F

    TS16949

    Abstract: ZXTN19060CG ZXTN19060CGTA ZXTP19060CG
    Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541 TS16949 ZXTN19060CG ZXTN19060CGTA ZXTP19060CG

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541

    Untitled

    Abstract: No abstract text available
    Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)


    Original     		PDF 2SA2094 2SC5866 SC-96) R1102A

    Untitled

    Abstract: No abstract text available
    Text: 2SC5866 Datasheet NPN 2A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2A TSMT3 Collector Base Emitter 2SC5866 SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2094 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


    Original     		PDF 2SC5866 SC-96) 2SA2094 R1102A

    Untitled

    Abstract: No abstract text available
    Text: DSS4160DS 60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26 Features Mechanical Data • BVCEO > 60V   IC = 1A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = 2A Peak Pulse Current  UL Flammability Classification Rating 94V-0


    Original     		PDF DSS4160DS J-STD-020 250mV MIL-STD-202, DS36556

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound


    Original     		PDF FMMT491 500mW FMMT591 AEC-Q101 DS33091