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    60V 3A POWER TRANSISTOR Search Results

    60V 3A POWER TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    60V 3A POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C5825

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5825 200mV 2SA2072. SC-63) OT-428> C5825 R1120A C5825

    C5825

    Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
    Text: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5825 200mV 2SA2073 SC-63) OT-428> C5825 C5825 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073

    2SA20

    Abstract: MP6Z3
    Text: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 200mV 200mA) 2SC5824-die 2SA2071-die 2SA20 MP6Z3

    2SA2071

    Abstract: 2SC5824 T100
    Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. R1120A 2SA2071 2SC5824 T100

    C5825

    Abstract: 2SC5825 2SA2073
    Text: Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5825 200mV 2SA2073 SC-63) OT-428> C5825 R0039A C5825 2SC5825 2SA2073

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. R1120A

    2SA2071

    Abstract: 2SC5824 T100 60V transistor npn 2a switching applications
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100 60V transistor npn 2a switching applications

    c5826

    Abstract: 2SA2073 2SC5826
    Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5826 200mV 2SA2073 C5826 c5826 2SA2073 2SC5826

    c5826

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5826 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5826 200mV 2SA2073 C5826 R1120A c5826

    Untitled

    Abstract: No abstract text available
    Text: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 200mV 200mA) 2SC5824-die 2SA2071-die

    C5825

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5825 200mV 2SA2072. SC-63) OT-428> C5825 R1010A C5825

    2SD880Y

    Abstract: VCEO-60V 2SD880-Y 2SD880
    Text: SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage


    Original     		PDF 2SD880Y O-220 2SD880Y VCEO-60V 2SD880-Y 2SD880

    2SC5824

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071.


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. R1120A 2SC5824

    mosfet pch 3a 60v

    Abstract: JESD97 STS4C3F60L
    Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly


    Original     		PDF STS4C3F60L STS4C3F60L mosfet pch 3a 60v JESD97

    JESD97

    Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
    Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly


    Original     		PDF STS4C3F60L STS4C3F60L JESD97 s4c3f60l mosfet pch 3a 60v

    NPN Transistor 8A

    Abstract: TIP100 TIP105
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A


    Original     		PDF TIP105 NPN Transistor 8A TIP100 TIP105

    C5103

    Abstract: transistor C5103 C5103 Transistor
    Text: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)


    Original     		PDF 2SC5103 SC-63) OT-428> 2SA1952 C5103 R1102A C5103 transistor C5103 C5103 Transistor

    Untitled

    Abstract: No abstract text available
    Text: MP6X3 Transistors Medium Power Transistor 60V, 3A MP6X3 zDimensions (Unit : mm) zApplication Low frequency amplifier High speed switching MPT6 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC=3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC=2A, IB=200mA)


    Original     		PDF 200mV 200mA) 2SC5824-dies

    catalog transistor

    Abstract: 2SC5824
    Text: MP6X3 Transistors Medium Power Transistor 60V, 3A MP6X3 zDimensions (Unit : mm) zApplication Low frequency amplifier High speed switching MPT6 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC=3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC=2A, IB=200mA)


    Original     		PDF 200mV 200mA) 2SC5824-dies catalog transistor 2SC5824

    2sa1952

    Abstract: No abstract text available
    Text: 2SA1952 Datasheet PNP -5A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -5A CPT3 Collector Base Emitter 2SA1952 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5103 3) Low VCE(sat) VCE(sat)= -0.3V(Max.) (IC/IB= -3A/ -0.15A)


    Original     		PDF 2SA1952 SC-63) OT-428> 2SC5103 A1952 R1102A 2sa1952

    c5826

    Abstract: 2SA2073 2SC5826
    Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)


    Original     		PDF 2SC5826 65Max. 200mV 2SA2073 C5826 c5826 2SA2073 2SC5826

    c5826

    Abstract: 2SC5826 2SA2073 2SA20
    Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)


    Original     		PDF 2SC5826 65Max. 200mV 2SA2073 C5826 c5826 2SC5826 2SA2073 2SA20

    2SB1274

    Abstract: 2SD1913 82055 D2000 transistor
    Text: Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions General power amplifier. unit : mm 2041A [2SB1274/2SD1913] • 16.0


    Original     		PDF ENN2246B 2SB1274/2SD1913 2SB1274/2SD1913] 2SB1274 O-220ML 2SB1274 2SD1913 82055 D2000 transistor

    Untitled

    Abstract: No abstract text available
    Text: STN3NF06 N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of


    Original     		PDF OT-223 STN3NF06 OT-223