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    60V 10A P TYPE MOSFET Search Results

    60V 10A P TYPE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    60V 10A P TYPE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dpak mosfet motor control DC

    Abstract: STD10PF06 STD10PF06 equivalent TO252 dpak mosfet
    Text: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED


    Original     		PDF STD10PF06 O-251) O-252) O-251 O-252 dpak mosfet motor control DC STD10PF06 STD10PF06 equivalent TO252 dpak mosfet

    Untitled

    Abstract: No abstract text available
    Text: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED


    Original     		PDF STD10PF06 O-251) O-252) O-251 O-252

    STD10PF06

    Abstract: STD10PF
    Text: STD10PF06  P - CHANNEL 60V - 0.18 Ω - 10A TO-252 STripFET POWER MOSFET TYPE STD10PF06 • ■ ■ ■ ■ ■ V DSS R DS o n ID 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED


    Original     		PDF STD10PF06 O-252 STD10PF06 STD10PF

    Untitled

    Abstract: No abstract text available
    Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6008U10000000 Version


    Original     		PDF MA6008U10000000 D020210 O-251 80pcs 4000pcs

    Untitled

    Abstract: No abstract text available
    Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6008D10000000 Version


    Original     		PDF MA6008D10000000 D020210 O-252 O-252 3000pcs 6000pcs

    Untitled

    Abstract: No abstract text available
    Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6008P10000000 Version


    Original     		PDF MA6008P10000000 D020210 O-220 50pcs 1000pcs

    Untitled

    Abstract: No abstract text available
    Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6004P10000000 Version


    Original     		PDF MA6004P10000000 D020210 O-220 50pcs 1000pcs

    IGBT DRIVER ignition coil automotive

    Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
    Text: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of


    Original     		PDF HUF75639P3, HUF75639S3S HUF75637P3, HUF75637S3S HUF75631P3 HUF75623P3 FN4477 FN4721 FN4720 FN4804 IGBT DRIVER ignition coil automotive mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252

    Untitled

    Abstract: No abstract text available
    Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6004F10000000 Version


    Original     		PDF MA6004F10000000 D020210 O-220F 50pcs 1000pcs

    STD10NF06

    Abstract: STD10NF06L 6-8 B1
    Text: STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L VDSS RDS on ID 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) • ■ 3 1 DESCRIPTION


    Original     		PDF STD10NF06L O-252) STD10NF06 STD10NF06L 6-8 B1

    AN8610

    Abstract: UF 407 Diode HIP2060AS1 HIP2060 HIP2060AS2 HIP2060AS3 MO-169 12v class d amplifier 70W
    Text: HIP2060 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.


    Original     		PDF HIP2060 HIP2060 AN8610 UF 407 Diode HIP2060AS1 HIP2060AS2 HIP2060AS3 MO-169 12v class d amplifier 70W

    Untitled

    Abstract: No abstract text available
    Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6004D10000000 Version


    Original     		PDF MA6004D10000000 D020210 O-252 O-252 3000pcs 6000pcs

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    Untitled

    Abstract: No abstract text available
    Text: MA6006S10000000 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The MA6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter


    Original     		PDF MA6006S10000000 MA6006S D061009 3000pcs 6000pcs

    IRFZ24N

    Abstract: IRFz24n equivalent
    Text: PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ24EPbF O-220 I840G IRFZ24N IRFz24n equivalent

    12v class d amplifier 70W

    Abstract: HIP2060AS1 HIP4080A HIP2060 HIP2060AS2 MO-169 AN8610 1350P
    Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.135Ω Max Per Transistor at VGS = 15V


    Original     		PDF HIP2060 TS-001AA HIP2060 100mJ MO-169 1-800-4-HARRIS 12v class d amplifier 70W HIP2060AS1 HIP4080A HIP2060AS2 AN8610 1350P

    12v class d amplifier 70W

    Abstract: HIP2060 HIP2060AS1 HIP2060AS2 HIP4080A MO-169 Transistor S1D
    Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array July 1996 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.125Ω Max Per Transistor at VGS = 15V


    Original     		PDF HIP2060 TS-001AA HIP2060 100mJ MO-169 1-800-4-HARRIS 12v class d amplifier 70W HIP2060AS1 HIP2060AS2 HIP4080A Transistor S1D

    12v class d amplifier 70W

    Abstract: 25E03 HIP4080A 001-AA transistor AHs
    Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS


    Original     		PDF HIP2060 HIP2060 1-800-4-HARRIS 12v class d amplifier 70W 25E03 HIP4080A 001-AA transistor AHs

    Untitled

    Abstract: No abstract text available
    Text: 60V>U-X /17-MOSFET 60V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK2286 F 2 0 S 6 N 60v 20 a ■ R A TIN G S A b s o lu te Maxim um R a tin g s m in Id Ite m f-f; { Î'ÎnL^X S t o r a g e T e m p e r a tu r e A' T' C h a n n e l T e m p e ra tu r e


    OCR Scan     		PDF /17-MOSFET 2SK2286 10//s, F20S6N)

    PAL 007 E MOSFET

    Abstract: mosfet pal 007 PAL 007 b MOSFET PAL 007 MOSFET k 2545 MOSFET PAL 007 a MOSFET J373 2SJ373 F20S6P CF20S6P
    Text: 60Vv'J-X MOSFET 60V SERIES POWER MOSFET W g - tf ä t ia O U T L IN E D IM E N S IO N S 2SJ373 F20S6P Mtëm • R A TIN G S ■ Absolute Maximum Ratings m Item s IE Symbol m m it Conditions m m Ratings w- i ± Unit Storage Temperature Tstg -5 5-150 °C .-V ■


    OCR Scan     		PDF CF20S6P) STO-22Q H/XlpgS10 G002530 PAL 007 E MOSFET mosfet pal 007 PAL 007 b MOSFET PAL 007 MOSFET k 2545 MOSFET PAL 007 a MOSFET J373 2SJ373 F20S6P CF20S6P

    K2286

    Abstract: k 2543 MOSFET 2SK2286 F20S6N
    Text: 6 0 V v 'J —X /t*7-M0SFET 60V SERIES POWER MOSFET O U T L IN E D IM EN SIO N S 2SK2286 F20S6N 60V 20a • RA TIN G S ■ Absolute Maximum Ratings « Item oS >-] Symbol a S to ra g e T em p eratu re Channel T em perature K u A > • v - x HEE D rain‘S o u rc e Voltage


    OCR Scan     		PDF F20S6N) STO-220 S1/100 2SK2286 CF20S6N) 0Q02E02 K2286 k 2543 MOSFET F20S6N

    2510T

    Abstract: No abstract text available
    Text: 60V>'J-X A 7 — MOSFET 60V SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2281 F10E6N 60v 10a • Æ fè * R A TIN G S A b s o lu te Maxim um R a tin g s m R ti Ite m ^ * S to r a g e T e m p e ra tu re -f- -y 7 ^ ¡'/ni t*x C h a n n e l T e m p e ra tu re


    OCR Scan     		PDF 2SK2281 F10E6N) 2510T

    f20f6n

    Abstract: 2SK2287
    Text: 60VvU-X M9-M0SFET 60V SERIES POWER MOSFET ! > / \> 7 .* > h fi • O U T L IN E D IM E N S IO N S Case : FTO-220 2SK2287 F20F6N 60v 20 a D a te code Yt KÎA.J No. 1 . - Cìate : 2 1! D rain '3 1I S o u r c e ■ R A T IN G S B if ë Î 'il S ^ A È f ê


    OCR Scan     		PDF 60VvU-X FTO-220 2SK2287 F20F6N) f20f6n 2SK2287

    IRLSZ14A

    Abstract: diode 60V 8A
    Text: IRLSZ14A Advanced Power MOSFET FEATURES B V dss - Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS= 60V 60 V


    OCR Scan     		PDF IRLSZ14A G3c12fi4 IRLSZ14A diode 60V 8A