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    60N80P Search Results

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    60N80P Price and Stock

    Littelfuse Inc IXFB60N80P

    MOSFET N-CH 800V 60A PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFB60N80P Tube 294 1
    • 1 $29.13
    • 10 $29.13
    • 100 $29.13
    • 1000 $29.13
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    Newark IXFB60N80P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $19.08
    • 10000 $19.08
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    RS IXFB60N80P Bulk 8 Weeks 25
    • 1 -
    • 10 -
    • 100 $28.15
    • 1000 $28.15
    • 10000 $28.15
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    Littelfuse Inc IXFL60N80P

    MOSFET N-CH 800V 40A ISOPLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFL60N80P Tube 300
    • 1 -
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    • 1000 $19.50463
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    Newark IXFL60N80P Bulk 300
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    • 1000 $20.44
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    RS IXFL60N80P Bulk 8 Weeks 25
    • 1 -
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    • 100 $30.17
    • 1000 $30.17
    • 10000 $30.17
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    Littelfuse Inc IXFN60N80P

    MOSFET N-CH 800V 53A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN60N80P Tube 1
    • 1 $45.07
    • 10 $33.873
    • 100 $45.07
    • 1000 $45.07
    • 10000 $45.07
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    RS IXFN60N80P Bulk 8 Weeks 10
    • 1 -
    • 10 $48.53
    • 100 $48.53
    • 1000 $48.53
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    IXYS Corporation IXFN60N80P

    MOSFET Modules DIODE Id54 BVdass800
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN60N80P 1,176
    • 1 $43.12
    • 10 $37.24
    • 100 $35.22
    • 1000 $33.69
    • 10000 $33.69
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    Newark IXFN60N80P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $32.89
    • 10000 $32.89
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    TTI IXFN60N80P Tube 300
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    • 1000 $31.38
    • 10000 $31.38
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    TME IXFN60N80P 294 1
    • 1 $58.92
    • 10 $46.87
    • 100 $46.87
    • 1000 $46.87
    • 10000 $46.87
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    New Advantage Corporation IXFN60N80P 10 1
    • 1 -
    • 10 $71.59
    • 100 $71.59
    • 1000 $71.59
    • 10000 $71.59
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    IXYS Corporation IXFB60N80P

    MOSFETs 60 Amps 800V 0.14 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFB60N80P
    • 1 $27.25
    • 10 $22.44
    • 100 $20.77
    • 1000 $19.82
    • 10000 $19.82
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    TTI IXFB60N80P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $18.2
    • 10000 $18.2
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    TME IXFB60N80P 15 1
    • 1 $30.24
    • 10 $24.01
    • 100 $22.55
    • 1000 $22.55
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    60N80P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		60N80P ISOPLUS264TM ISOPLUS264 PDF

    60N80

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		60N80P PLUS264TM 60N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		60N80P PDF

    60N80P

    Abstract: 60N80 IXFL60N80P
    Text: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		60N80P ISOPLUS264TM ISOPLUS264 60N80P 60N80 IXFL60N80P PDF

    60n80p

    Abstract: 60N80 ixfb60n80p IXFb 60N80P
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		60N80P 60n80p 60N80 ixfb60n80p IXFb 60N80P PDF

    IXFN 60N80P

    Abstract: ixfn60n80p 60N80 60N80P
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		60N80P IXFN 60N80P ixfn60n80p 60N80 60N80P PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF