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    60GHZ TRANSISTOR Search Results

    60GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    60GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    60GHz transistor

    Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
    Text: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE


    Original     		SFT-9400B 60GHz SFT-9400B 43Gb/s 40GbE, 100GbE 50GHz 60GHz transistor InP transistor HEMT SFT9400B OC-768 98T2 InP HBT transistor low noise PDF

    OC 76 germanium transistor

    Abstract: LNA transistor 1.8GHz
    Text: START620 NPN SiGe RF Transistor TARGET DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family that provide market with the state of the art of RF silicon process. It uses ST’s Silicon Germanium technology. This technology offers ft’s of up to 45GHz


    Original     		START620 13dBm OT343 OT343 START620TR START620 45GHz 60GHz. 500MHz-5GHz OC 76 germanium transistor LNA transistor 1.8GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S110FS PDF

    MT4S200U

    Abstract: No abstract text available
    Text: MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm FEATURES • Low Noise Figure :NF=1.7dB @f=5.8GHz • High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P ２ 1 USQ 2 Maximum Ratings (Ta = 25°C)


    Original     		MT4S200U 50ohm 001GHz 801GHz MT4S200U PDF

    START620

    Abstract: 60Ghz 60GHz transistor START620TR
    Text: START620 NPN SiGe RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family


    Original     		START620 13dBm OT343 OT343 START620 45GHz 60GHz. START620TR 500MHz-5GHzthis 60Ghz 60GHz transistor START620TR PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S109FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S109FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.35dB @f=2GHz • High Gain:|S21e|2=8.2dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S109FS PDF

    60GHz transistor

    Abstract: 2-1E1A
    Text: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:|S21e|2= 13dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S107FS 60GHz transistor 2-1E1A PDF

    60GHz transistor

    Abstract: No abstract text available
    Text: MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.2dB @f=2GHz • High Gain:|S21e|2=10dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S106FS 60GHz transistor PDF

    60GHz transistor

    Abstract: MT3S106FS 60Ghz germanium transistors NPN
    Text: MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.2dB @f=2GHz • High Gain:|S21e|2=10dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S106FS 60GHz transistor MT3S106FS 60Ghz germanium transistors NPN PDF

    START620

    Abstract: 60Ghz 60GHz transistor START620TR 500MHz-5GHz
    Text: START620 NPN SiGe RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family


    Original     		START620 13dBm OT343 OT343 START620 45GHz 60GHz. START620TR 500MHz-5GHzthis 60Ghz 60GHz transistor START620TR 500MHz-5GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S109FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S109FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.35dB @f=2GHz • High Gain:|S21e|2=8.2dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S109FS PDF

    60GHz transistor

    Abstract: No abstract text available
    Text: MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.9dB @f=2GHz • High Gain:|S21e|2=11.5dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S108FS 60GHz transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:|S21e|2= 13dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S107FS PDF

    MT3S110FS

    Abstract: No abstract text available
    Text: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S110FS MT3S110FS PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.9dB @f=2GHz • High Gain:|S21e|2=11.5dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		MT3S108FS PDF

    MT6L76FS

    Abstract: No abstract text available
    Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10


    Original     		MT6L76FS MT3S06FS MT3S106FS MT6L76FS PDF

    Untitled

    Abstract: No abstract text available
    Text: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 8


    Original     		MT6L67FS MT3S36FS MT3S106FS PDF

    60Ghz

    Abstract: 60GHz transistor MT4S100T
    Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P6 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics


    Original     		MT4S100T 60Ghz 60GHz transistor MT4S100T PDF

    MT6L77FS

    Abstract: No abstract text available
    Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		MT6L77FS MT3S11FS MT3S106FS MT6L77FS PDF

    Untitled

    Abstract: No abstract text available
    Text: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		MT6L67FS MT3S36FS MT3S106FS PDF

    Untitled

    Abstract: No abstract text available
    Text: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		MT6L75FS MT3S07FS MT3S106FS PDF

    Untitled

    Abstract: No abstract text available
    Text: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		MT6L74FS MT3S07FS MT3S110FS PDF

    MT6L76FS

    Abstract: No abstract text available
    Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		MT6L76FS MT3S06FS MT3S106FS MT6L76FS PDF

    60Ghz

    Abstract: 60GHz transistor MT3S107FS
    Text: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:|S21e|2= 13dB (@f=2GHz) 0.6 ±0.05 • 3 2 0.1±0.05 1 Absolute Maximum Ratings (Ta = 25°C)


    Original     		MT3S107FS 60Ghz 60GHz transistor MT3S107FS PDF