60Ghz
Abstract: 60GHz transistor
Text: Broadband Product Line Up / Down Converters for Commercial, Military and Space Applications www.aeroflex.com/bband Design Capabilities up to 60GHz Custom Designs Ultra High Performance ❑ High Linearity ❑ Low Noise Figure ❑ Flat Passband ❑ Low Spurious
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60GHz
TX0209-25
400MHz
-60dBc
30dBm
SCD11003
800-THE-1553
60Ghz
60GHz transistor
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5609 dec
Abstract: dec 5609 MLT 22 615 mlt 22 627 001-120 544 mmic ED-4701 FMM5125X
Text: FMM5125X 15/60GHz Frequency Multiplier MMIC FEATURES •Input/Output Frequency : 15 / 60 GHz •Wide Frequency Band : 57 - 64 GHz •Conversion Loss : Lc = 5dB Typ. @fout = 60 GHz, Pin = 10 dBm •High Output Power : Po = 5dBm (Typ.) @fout = 60 GHz, Pin = 10 dBm
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FMM5125X
15/60GHz
FMM5125X
1906B,
5609 dec
dec 5609
MLT 22 615
mlt 22 627
001-120
544 mmic
ED-4701
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60Ghz
Abstract: ID130 60GHz transistor CHX2192 max3366
Text: CHX2192 RoHS COMPLIANT 30-60GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2192 is a by 2 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of
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CHX2192
30-60GHz
CHX2192
27-33GHz
11dBm
12dBm
130mA
DSCHX21920204
60Ghz
ID130
60GHz transistor
max3366
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet June 15, 2013 60GHz Low Noise Amplifier TGA4600 Key Features • • • • • • RF Probe Data Bias Conditions: Vd = 3.0 V, Id =41 mA 15 Small Signal dB 10 GAIN Typical Frequency Range: 57 - 65 GHz 4 dB Nominal Noise Figure 13 dB Nominal Gain
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60GHz
TGA4600
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60Ghz
Abstract: TGA4600 GaAs 0.15 um pHEMT
Text: Product Data Sheet August 5, 2008 60GHz Low Noise Amplifier TGA4600 Key Features • • • • • • RF Probe Data Bias Conditions: Vd = 3.0 V, Id =41 mA 15 Small Signal dB 10 GAIN Typical Frequency Range: 57 - 65 GHz 4 dB Nominal Noise Figure 13 dB Nominal Gain
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60GHz
TGA4600
TGA4600
GaAs 0.15 um pHEMT
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CHX2192
Abstract: CHX2192-99F frequency multiplier
Text: CHX2192 RoHS COMPLIANT 30-60GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2192 is a balanced frequency multiplier by 2 monolithic circuit. It is designed for a wide range of applications, from military to commercial communication
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CHX2192
30-60GHz
CHX2192
11dBm
12dBm
130mA
DSCHX21924015
CHX2192-99F
frequency multiplier
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60Ghz
Abstract: FMM5716X ED-4701
Text: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for
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FMM5716X
60GHz
FMM5716X
1906B,
ED-4701
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60Ghz
Abstract: 60GHz transistor
Text: CHX2190a 30-60GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2190a is a cascadable by 2 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF
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CHX2190a
30-60GHz
CHX2190a
28-30GHz
DSCHX21909137
60Ghz
60GHz transistor
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MLT 22 615
Abstract: No abstract text available
Text: FMM5125X 15/60GHz Frequency Multiplier MMIC FEATURES •Input/Output Frequency : 15 / 60 GHz •Wide Frequency Band : 57 - 64 GHz •Conversion Loss : Lc = 5dB Typ. @fout = 60 GHz, Pin = 10 dBm •High Output Power : Po = 5dBm (Typ.) @fout = 60 GHz, Pin = 10 dBm
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FMM5125X
15/60GHz
FMM5125X
1906B,
MLT 22 615
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Untitled
Abstract: No abstract text available
Text: FMM5715X 60GHz Power Amplifier FEATURES •High Output Power; P1dB = 16 dBm Typ. @ f = 60 GHz •High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5715X is a power amplifier MMIC designed for applications
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FMM5715X
60GHz
FMM5715X
1906B,
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Untitled
Abstract: No abstract text available
Text: CHX2192 RoHS COMPLIANT 30-60GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2192 is a by 2 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of
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CHX2192
30-60GHz
CHX2192
27-33GHz
11dBm
12dBm
130mA
DSCHX21920204
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60Ghz
Abstract: TGA4600-EPU
Text: Advance Product Information October 28, 2003 60GHz Low Noise Amplifier TGA4600-EPU Key Features • • • • • • RF Probe Data Bias Conditions: Vd = 3.0 V, Id =41 mA Typical Frequency Range: 57 - 65 GHz 4 dB Nominal Noise Figure 13 dB Nominal Gain Bias 3.0 V, 41 mA
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60GHz
TGA4600-EPU
TGA4600-EPU
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60GHz
Abstract: 60GHz transistor
Text: CHS2190a 50-60GHz Reflective SPDT Switch GaAs Monolithic Microwave IC Description The CHS2190a is a wideband monolithic diode based reflective switch. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF
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CHS2190a
50-60GHz
CHS2190a
50-60GHz
DSCHS21909137
60GHz
60GHz transistor
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Untitled
Abstract: No abstract text available
Text: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for
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FMM5716X
60GHz
FMM5716X
1906B,
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60Ghz
Abstract: 60GHz transistor
Text: CHS2190a 50-60GHz Reflective SPDT Switch GaAs Monolithic Microwave IC Description The CHS2190a is a wideband monolithic diode based reflective switch. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF
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CHS2190a
50-60GHz
CHS2190a
50-60GHz
DSCHS21909137
60Ghz
60GHz transistor
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60Ghz transistor
Abstract: 60Ghz CHA2157
Text: CHA2157 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
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CHA2157
55-60GHz
CHA2157
10ies
DSCHA21579090
60Ghz transistor
60Ghz
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60Ghz
Abstract: 60Ghz transistor waveguide circulator NJC2005
Text: NJC2005 60GHz Isolator NJC2005 is a waveguide junction isolator. It is designed for millimeter-wave applications. - MAXIMUM RATINGS -Handling power Min - Max 100 Ambient temperature -20 70 Unit mW degree centigrade - ELECTRICAL - <at 25 degree centigrade>
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NJC2005
60GHz
NJC2005
60Ghz transistor
waveguide circulator
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet August 5, 2008 60GHz Low Noise Amplifier TGA4600 Key Features • • • • • • RF Probe Data Bias Conditions: Vd = 3.0 V, Id =41 mA Typical Frequency Range: 57 - 65 GHz 4 dB Nominal Noise Figure 13 dB Nominal Gain Bias 3.0 V, 41 mA
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60GHz
TGA4600
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"Schottky Barrier Diodes"
Abstract: dh38 dh379 DH378 DH385
Text: DH378.DH385 G a A s S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Chip diodes : 2 to 60GHz Case style flexibility M208, BH10, F51. Operating frequency range : packaged diodes : 2 to 40GHz A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used
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DH378.
DH385
40GHz
60GHz
"Schottky Barrier Diodes"
dh38
dh379
DH378
DH385
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Untitled
Abstract: No abstract text available
Text: united monolithic semiconductors * CHS2190a 'S 50-60GHz Reflective SPDT Switch I GaAs Monolithic Microwave IC V Description The CHS2190a is a wideband monolithic diode based reflective switch. It is designed for a wide range of applications, from military to commercial communication
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CHS2190a
50-60GHz
CHS2190a
DSCHS21909137
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Untitled
Abstract: No abstract text available
Text: u n ite d m o n o lith ic sem ico n d u cto rs CHA2157 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to
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CHA2157
55-60GHz
CHA2157
DSCHA21579027
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PM 8910
Abstract: JS8910-AS
Text: PRELIMINARY JS8910-AS FEATURES : ULTRA LOW NOISE FIGURE 1.5dB at f=40GHz 2.OdB at f=60GHz - 0.1 pm GATE LENGTH • T-SHAPED GATE SUPER HIGH ASSOCIATED GAIN 8dB at f=40GHz 6dB at f=60GHz PSEUDOMORPH IC STRUCTURE HIGH MAXIMUM AVAILABLE GAIN 10dB at f=40GHz 8dB at f=60GHz
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JS8910-AS
40GHz
60GHz
40GHz
60GHz
PM 8910
JS8910-AS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Gallium Arsenide Planar Doped Barrier PDB Zero Bias Detector Diodes (0.5 to 60GHz) * Features • ■ ■ ■ ■ ■ ■ High RF Pulsed Burnout High ESD Threshold Low “ M f ” Noise Excellent Temperature Stability, Better than Silicon Schottky ZBD’s
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60GHz)
30dBm
100ohm
10MHz
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voltage multiplier ic
Abstract: No abstract text available
Text: united monolithic semiconductors * CHX2190a J 'S 30-60GHz Frequency Multiplier GaAs Monolithic Microwave IC f I \ •* V Description The CHX2190a is a cascadable by 2 frequency multiplier m onolithic circuit. It is designed for a wide range of applications,
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CHX2190a
30-60GHz
CHX2190a
28-30GHz
DSCHX21909137
voltage multiplier ic
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