p035h
Abstract: 60EPS16
Text: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate
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I2185
60EPS16PbF
60EPS16PbF
O-247AC
p035h
60EPS16
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DIODE 60 A
Abstract: 60EPS16
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
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60EPS16PbF
O-247AC
18-Jul-08
DIODE 60 A
60EPS16
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according
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VS-60EPS16PbF,
VS-60EPS16-M3
JEDEC-JESD47
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according
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PDF
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VS-60EPS16PbF,
VS-60EPS16-M3
JEDEC-JESD47
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2
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PDF
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VS-60EPS16PbF,
VS-60EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
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60EPS16PbF
O-247AC
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
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Original
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PDF
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60EPS16PbF
O-247AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Designed and JEDEC-JESD47 2 qualified according to • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-247AC modified 1 Cathode • Typical applications are in input rectification and these
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VS-60EPS16PbF
JEDEC-JESD47
2002/95/EC
O-247AC
VS-60EPS16PbF
11-Mar-11
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DIODE 60 A
Abstract: 60EPS16
Text: 60EPS16 High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16 rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
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60EPS16
O-247AC
18-Jul-08
DIODE 60 A
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Untitled
Abstract: No abstract text available
Text: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate
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Original
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PDF
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I2185
60EPS16PbF
60EPS16PbF
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2
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PDF
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VS-60EPS16PbF,
VS-60EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
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Original
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PDF
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60EPS16PbF
O-247AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 TO-247AC modified
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Original
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PDF
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VS-60EPS16PbF,
VS-60EPS16-M3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2
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Original
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PDF
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VS-60EPS16PbF,
VS-60EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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60EPS16
Abstract: P035H
Text: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate
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Original
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PDF
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I2185
60EPS16PbF
60EPS16PbF
12-Mar-07
60EPS16
P035H
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4512 diode
Abstract: No abstract text available
Text: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
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60EPS16PbF
O-247AC
18-Jul-08
4512 diode
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I2122
Abstract: 035H 60EPS08 60EPS12 60EPS16 "RECTIFIER DIODE"
Text: Bulletin I2122 rev. C 10/05 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1.1V @ 60A IFSM = 950A VRRM = 800 to 1600V Description/ Features Major Ratings and Characteristics Characteristics Values Units 60 A VRRM 800 to 1600 V Typical applications are in input rectification and these
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I2122
60EPS.
O-247AC
035H
60EPS08
60EPS12
60EPS16
"RECTIFIER DIODE"
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60EPS08
Abstract: 60EPS12 60EPS16
Text: 2002-02-20 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-239-48 60EPS08 diodTO-247 70-239-55 60EPS12 diodTO-247 Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE
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60EPS08
diodTO-247
60EPS12
I2122
60EPS.
availabl17)
O-247AC
60EPS16
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vishay 1N4007 DO-214AC
Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . V I S H AY I N T E R T E C H N O L O G Y, I N C . 整流器 整流器 选型指南 肖特 基 整 流 器 超快 恢 复整流器 标 准和快 速恢 复整流器 桥式整流器 w w w. v i s h a y. c o m
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VMN-SG2178-1111
vishay 1N4007 DO-214AC
VS-30BQ060PbF
40MT160KPBF
vishay 1N4007 DO-213AB
ss32 control pack
70MT160KPBF
20bq030pbf
430 SBL2040CT
v40150
MBR10T100
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035H
Abstract: 60EPS08 60EPS12 60EPS16
Text: Bulletin I2122 rev. C 10/05 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1.1V @ 60A IFSM = 950A VRRM = 800 to 1600V Description/ Features Major Ratings and Characteristics Characteristics Values Units 60 A VRRM 800 to 1600 V Typical applications are in input rectification and these
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I2122
60EPS.
15ability,
12-Mar-07
035H
60EPS08
60EPS12
60EPS16
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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Untitled
Abstract: No abstract text available
Text: 60EPS RECTIFIER DIODE Reverse Voltage: Forward Current: 800 to 1600V 60A Features z z z Circuit z z Low Leakage Current Low Forward Voltage 150°C Operating Junction Temperature Case Style TO-247AC RoHS Compliance Applications ● Input rectification Module Type
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60EPS
O-247AC
60EPS08
60EPS12
60EPS16
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60EPS08
Abstract: 60EPS12 60EPS16
Text: Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A IFSM = 950A VRRM 800 to 1600V Description/Features The 60EPS. rectifierSAFEIRseries has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.
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I2122
60EPS.
O-247AC
60EPS08
60EPS12
60EPS16
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T 4512 H diode
Abstract: diode T 4512 H diode rectifier p 600
Text: Bulletin 12122 rev. A 07/97 International TOR Rectifier SA FElR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A 'f s m = 950A VRRM800 to 1600V Description/Features The 60EPS. rectifierSA FE //?series has been optimized for very low forward voltage drop, with moderate leakage.
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60EPS.
800tig.
O-247AC
T 4512 H diode
diode T 4512 H
diode rectifier p 600
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