6040TA Search Results
6040TA Datasheets Context Search
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pg28d
Abstract: EN3553 2SC4433 SL 100 NPN Transistor base emitter collector
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2SC4433 100MHz) 750MHz pg28d EN3553 2SC4433 SL 100 NPN Transistor base emitter collector | |
Contextual Info: Ordering number: EN 3 5 5 3 J SA VYO No.3553 _ 2SC4433 NPN Epitaxial Planar Silicon Transistor J HF Amp Applications Features • High power gain : PG = 28dB typ f ^lOOMHz • High cutoff frequency: f T =750M Hz typ • Small Cob, c „ Absolute M aximum Ratings at T a = 25‘C |
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2SC4433 2SC4433 6040TA | |
Contextual Info: Ordering number: EN 3 5 7 8 l 2SA1770/2SC4614 No.3578 I PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • Adoption of MBIT process • High breakdown voltage and large current capacity : 2SA1770 Absolute Maximum Ratings at T a=25°C |
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2SA1770/2SC4614 2SA1770 6040TA 3578-V4 | |
C4614Contextual Info: Ordering number : EN3578A 2SA1770/2SC4614 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25°C |
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EN3578A 2SA1770/2SC4614 2SA1770 C4614 | |
EN3580A
Abstract: 2SC4696
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EN3580A 2SC4696 2SC4696] EN3580A 2SC4696 | |
3580A
Abstract: 2SC4696 9010V
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2SC4696 3580A 9010V | |
Contextual Info: Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage and large current capacity. unit:mm 2064A [2SA1770/2SC4614] |
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ENN3578 2SA1770/2SC4614 2SA1770/2SC4614] 2SA1770 | |
2SC4614
Abstract: 2SA1770 HP 7001 A1770 IC 4614
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2SA1770/2SC4614 2SA1770 2SC4614 2SA1770 HP 7001 A1770 IC 4614 | |
2SC4614
Abstract: 2sa1770 equivalent 2SA1770 ITR04571 ITR04572
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ENN3578 2SA1770/2SC4614 2SA1770/2SC4614] 2SA1770 2SC4614 2sa1770 equivalent 2SA1770 ITR04571 ITR04572 | |
2064A
Abstract: 9010V ITR07452 2SC4696 ITR07448 ITR07449 ITR07450 ITR07451
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ENN3580A 2SC4696 2SC4696] 2064A 9010V ITR07452 2SC4696 ITR07448 ITR07449 ITR07450 ITR07451 | |
2SC4433
Abstract: ITR06901 ITR06902 ITR06903 ITR06904 ITR06905 ITR06906
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ENN3553 2SC4433 100MHz) 750MHz 2SC4433] 2SC4433 ITR06901 ITR06902 ITR06903 ITR06904 ITR06905 ITR06906 | |
Contextual Info: Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage and large current capacity. unit:mm 2064A [2SA1770/2SC4614] |
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ENN3578 2SA1770/2SC4614 2SA1770/2SC4614] 2SA1770 | |
Contextual Info: Ordering number:ENN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions • High power gain : PG=28dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre. unit:mm 2033A [2SC4433] |
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ENN3553 2SC4433 100MHz) 750MHz 2SC4433] | |
EN3553
Abstract: 2SC4432 2SC4433 D2598
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EN3553 2SC4433 100MHz) 750MHz 2SC4433] EN3553 2SC4432 2SC4433 D2598 | |
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Contextual Info: 2SA1770 / 2SC4614 Ordering number : EN3578A SANYO Semiconductors DATA SHEET 2SA1770 / 2SC4614 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of MBIT process High breakdown voltage and large current capacity |
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2SA1770 2SC4614 EN3578A 2SA1770 | |
2SC4614
Abstract: 2SA1770 2sa1770 equivalent 80-120MHz
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EN3578 2SA1770/2SC4614 2SA1770/2SC4614] 2SA1770 2SC4614 2SA1770 2sa1770 equivalent 80-120MHz |