STGF12NB60KD
Abstract: JESD97 STGB12NB60KD STGP12NB60KD
Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V
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STGB12NB60KD
STGF12NB60KD
STGP12NB60KD
O-220
O-220FP
STGF12NB60KD
O-220FP
O-220
JESD97
STGB12NB60KD
STGP12NB60KD
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PDF
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st 393
Abstract: JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS
Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V
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STGB12NB60KD
STGF12NB60KD
STGP12NB60KD
O-220
O-220FP
STGF12NB60KD
O-220FP
O-220
st 393
JESD97
STGB12NB60KD
STGP12NB60KD
schematic diagram UPS
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PDF
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mosfet 600V 20A
Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
Text: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce
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releases/2008/power
mosfet 600V 20A
L084
to220sis equivalent
toshiba mosfet
TK12J60U
TK15A60U
mosfet 12A 600V
tk12d60u
TK20A60U
toshiba cmos memory camera
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PDF
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cef12n6
Abstract: CEP12N6
Text: CEP12N6/CEB12N6 CEF12N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP12N6 600V 0.65Ω 12A 10V CEB12N6 600V 0.65Ω 12A 10V CEF12N6 600V 0.65Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON).
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CEP12N6/CEB12N6
CEF12N6
CEP12N6
CEB12N6
O-263
O-220
O-220F
O-220/263
cef12n6
CEP12N6
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PDF
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b14nk60z
Abstract: P14NK60ZFP p14nk60 P14NK60Z B14NK60 W14NK60Z STP14NK60Z STP14NK60ZFP STW14NK60Z STB14NK60Z
Text: STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK60Z 600V <0.5Ω 13.5A 160W 3 1 STP14NK60ZFP 600V <0.5Ω
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STP14NK60Z
STP14NK60ZFP
STB14NK60Z/-1
STW14NK60Z
O-220/FP-D2/I2PAK-TO-247
STP14NK60Z
STB14NK60Z
STB14NK60Z-1
b14nk60z
P14NK60ZFP
p14nk60
P14NK60Z
B14NK60
W14NK60Z
STP14NK60ZFP
STW14NK60Z
STB14NK60Z
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PDF
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Untitled
Abstract: No abstract text available
Text: STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK60Z 600V <0.5Ω 13.5A 160W 1 STP14NK60ZFP 600V <0.5Ω
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STP14NK60Z
STP14NK60ZFP
STB14NK60Z/-1
STW14NK60Z
O-220/FP-D2/I2PAK-TO-247
STP14NK60Z
STB14NK60Z
STB14NK60Z-1
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PDF
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GW19NC60WD
Abstract: gw19nc60w
Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction
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STGW19NC60WD
STGP19NC60WD
O-220
O-247
O-220
GW19NC60WD
gw19nc60w
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PDF
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GW19NC60WD
Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction
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STGW19NC60WD
STGP19NC60WD
O-220
O-247
O-220
GW19NC60WD
gw19nc60w
GP19NC60WD
STGP19NC60WD
STGW19NC60WD
JESD97
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PDF
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12n60d1c
Abstract: 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 HGTB12N60D1C 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package
Text: S E M I C O N D U C T O R HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT April 1995 Features • • • • • • • Package 12A, 600V rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω
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HGTB12N60D1C
100ns
100oC.
TS-001AA
O-220)
HGTB12N60D1C
ICL7667
12n60d1c
12n60d1
600V Current Sensing N-Channel IGBT
equivalent 12n60d1c
ICL7667
10A 600V MOS
12A, 600V Current Sensing N-Channel IGBT
HGTB12N60D1C equivalent
TS-001AA Package
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PDF
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G12N60D1
Abstract: G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60
Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR BOTTOM SIDE
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HGTG12N60D1D
O-247
500ns
150oC.
G12N60D1
G12N60D1D
AN7254
AN7260
HGTG12N60D1D
G12N60
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PDF
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gp19nc60hd
Abstract: GB19NC60HD gb19nc60 ST IGBT code marking JESD97 STGB19NC60HD STGP19NC60HD to-247 to-220
Text: STGB19NC60HD STGP19NC60HD N-channel 600V - 19A - TO-220 - D2PAK Very fast PowerMESH IGBT General features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60HD 600V < 2.5V 19A STGB19NC60HD 600V < 2.5V 19A 3 3 1 • Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction
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STGB19NC60HD
STGP19NC60HD
O-220
O-220
gp19nc60hd
GB19NC60HD
gb19nc60
ST IGBT code marking
JESD97
STGB19NC60HD
STGP19NC60HD
to-247 to-220
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PDF
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Mosfet
Abstract: SSF12N60F
Text: SSF12N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.55Ω (typ.) ID 12A TO220F Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications
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SSF12N60F
O220F
Mosfet
SSF12N60F
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Untitled
Abstract: No abstract text available
Text: SCT12N60FD Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V
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SCT12N60FD
O-220F-3L
KSD-S0O001-000
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Untitled
Abstract: No abstract text available
Text: SCT12N60P Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V
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SCT12N60P
O-220AB-3L
KSD-S0P004-001
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STW12NC60
Abstract: diode F4 6A
Text: STW12NC60 N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NC60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.55Ω 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STW12NC60
O-247
STW12NC60
diode F4 6A
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PDF
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STW12NB60
Abstract: No abstract text available
Text: STW12NB60 N-CHANNEL 600V - 0.5Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.6Ω 12 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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STW12NB60
O-247
STW12NB60
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PDF
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Untitled
Abstract: No abstract text available
Text: KSM12N60C/KSMF12N60C 600V N-Channel MOSFET TO-220 Features • • • • • • TO-220F 12A, 600V, RDS on = 0.65Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSM12N60C/KSMF12N60C
O-220
O-220F
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PDF
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STW12NB60
Abstract: No abstract text available
Text: STW12NB60 N-CHANNEL 600V - 0.5Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.6Ω 12 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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STW12NB60
O-247
STW12NB60
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PDF
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g12n60d1
Abstract: AN7254 AN7260 HGTP12N60D1 G12N60D
Text: HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device
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HGTP12N60D1
O-220AB
500ns
150oC.
g12n60d1
AN7254
AN7260
HGTP12N60D1
G12N60D
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PDF
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600V Current Sensing N-Channel IGBT
Abstract: Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V
Text: Œ ï ^ « 1 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12A.600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r D S (O N) .0.27V
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OCR Scan
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HGTB12N60D1C
TS-001AA
O-220)
100ns
HGTB12N60D1C
600V Current Sensing N-Channel IGBT
Current Sensing N-Channel IGBT
HGTB12N60D1C equivalent
12A600V
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PDF
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12n60d1
Abstract: 12n60d1c 600V Current Sensing N-Channel IGBT equivalent 12n60d1c HGTB12N60D1C 12n60d
Text: HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Package Features • 12A, 600V JE D E C T S -001A A 5 LEAD TO -220 • r • Low VCe(SAT) at 25 A . 2.5V (Typ)
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OCR Scan
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HGTB12N60D1C
100ns
-001A
HGTB12N60D1C
12n60d1
12n60d1c
600V Current Sensing N-Channel IGBT
equivalent 12n60d1c
12n60d
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PDF
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Untitled
Abstract: No abstract text available
Text: bflE J> HARRIS SEMICOND SECTOR • 43G2E71 0DSD2Sn ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Decem ber 1993 Features Package • 12 A ,600V • JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW r D S (O N ) .0.27V
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OCR Scan
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43G2E71
HGTB12N60D1C
TS-001AA
O-220)
100ns
60jia
ICL7667
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PDF
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12n60d1c
Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
Text: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V
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OCR Scan
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M302271
0QSD25D
HGTB12N60D1C
100ns
HGTB12N60D1C
M3D2B71
D05QSS3
12N60D1C
12n60d1c
12n60d1
equivalent 12n60d1c
HGTB12N60D1C equivalent
BT 33C
12N60
Harris Semiconductor to220 power transistor
equivalent+12n60d1c
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PDF
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12N60D1D
Abstract: 12n60d1
Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description
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OCR Scan
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HGTG12N60D1D
500ns
12N60D1D
12n60d1
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PDF
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