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    600V 12A Search Results

    600V 12A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CR12CM-12B#BH0 Renesas Electronics Corporation 600V - 12A - Thyristor Medium Power Use Visit Renesas Electronics Corporation
    CR12FM-12B#BH0 Renesas Electronics Corporation 600V - 12A - Thyristor Medium Power Use Visit Renesas Electronics Corporation
    CR12CM-12A#BH0 Renesas Electronics Corporation 600V - 12A - Thyristor Medium Power Use Visit Renesas Electronics Corporation
    CR12FM-12B#BG0 Renesas Electronics Corporation 600V - 12A - Thyristor Medium Power Use Visit Renesas Electronics Corporation
    BCR12CS-12LBT2#BH0 Renesas Electronics Corporation 600V-12A-Triac Medium Power Use Visit Renesas Electronics Corporation

    600V 12A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STGF12NB60KD

    Abstract: JESD97 STGB12NB60KD STGP12NB60KD
    Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V


    Original     		PDF STGB12NB60KD STGF12NB60KD STGP12NB60KD O-220 O-220FP STGF12NB60KD O-220FP O-220 JESD97 STGB12NB60KD STGP12NB60KD

    st 393

    Abstract: JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS
    Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V


    Original     		PDF STGB12NB60KD STGF12NB60KD STGP12NB60KD O-220 O-220FP STGF12NB60KD O-220FP O-220 st 393 JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS

    mosfet 600V 20A

    Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
    Text: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce


    Original     		PDF releases/2008/power mosfet 600V 20A L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera

    cef12n6

    Abstract: CEP12N6
    Text: CEP12N6/CEB12N6 CEF12N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP12N6 600V 0.65Ω 12A 10V CEB12N6 600V 0.65Ω 12A 10V CEF12N6 600V 0.65Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP12N6/CEB12N6 CEF12N6 CEP12N6 CEB12N6 O-263 O-220 O-220F O-220/263 cef12n6 CEP12N6

    b14nk60z

    Abstract: P14NK60ZFP p14nk60 P14NK60Z B14NK60 W14NK60Z STP14NK60Z STP14NK60ZFP STW14NK60Z STB14NK60Z
    Text: STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK60Z 600V <0.5Ω 13.5A 160W 3 1 STP14NK60ZFP 600V <0.5Ω


    Original     		PDF STP14NK60Z STP14NK60ZFP STB14NK60Z/-1 STW14NK60Z O-220/FP-D2/I2PAK-TO-247 STP14NK60Z STB14NK60Z STB14NK60Z-1 b14nk60z P14NK60ZFP p14nk60 P14NK60Z B14NK60 W14NK60Z STP14NK60ZFP STW14NK60Z STB14NK60Z

    Untitled

    Abstract: No abstract text available
    Text: STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK60Z 600V <0.5Ω 13.5A 160W 1 STP14NK60ZFP 600V <0.5Ω


    Original     		PDF STP14NK60Z STP14NK60ZFP STB14NK60Z/-1 STW14NK60Z O-220/FP-D2/I2PAK-TO-247 STP14NK60Z STB14NK60Z STB14NK60Z-1

    GW19NC60WD

    Abstract: gw19nc60w
    Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction


    Original     		PDF STGW19NC60WD STGP19NC60WD O-220 O-247 O-220 GW19NC60WD gw19nc60w

    GW19NC60WD

    Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
    Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction


    Original     		PDF STGW19NC60WD STGP19NC60WD O-220 O-247 O-220 GW19NC60WD gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97

    12n60d1c

    Abstract: 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 HGTB12N60D1C 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package
    Text: S E M I C O N D U C T O R HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT April 1995 Features • • • • • • • Package 12A, 600V rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω


    Original     		PDF HGTB12N60D1C 100ns 100oC. TS-001AA O-220) HGTB12N60D1C ICL7667 12n60d1c 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package

    G12N60D1

    Abstract: G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60
    Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR BOTTOM SIDE


    Original     		PDF HGTG12N60D1D O-247 500ns 150oC. G12N60D1 G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60

    gp19nc60hd

    Abstract: GB19NC60HD gb19nc60 ST IGBT code marking JESD97 STGB19NC60HD STGP19NC60HD to-247 to-220
    Text: STGB19NC60HD STGP19NC60HD N-channel 600V - 19A - TO-220 - D2PAK Very fast PowerMESH IGBT General features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60HD 600V < 2.5V 19A STGB19NC60HD 600V < 2.5V 19A 3 3 1 • Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction


    Original     		PDF STGB19NC60HD STGP19NC60HD O-220 O-220 gp19nc60hd GB19NC60HD gb19nc60 ST IGBT code marking JESD97 STGB19NC60HD STGP19NC60HD to-247 to-220

    Mosfet

    Abstract: SSF12N60F
    Text: SSF12N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.55Ω (typ.) ID 12A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications


    Original     		PDF SSF12N60F O220F Mosfet SSF12N60F

    Untitled

    Abstract: No abstract text available
    Text: SCT12N60FD Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V


    Original     		PDF SCT12N60FD O-220F-3L KSD-S0O001-000

    Untitled

    Abstract: No abstract text available
    Text: SCT12N60P Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V


    Original     		PDF SCT12N60P O-220AB-3L KSD-S0P004-001

    STW12NC60

    Abstract: diode F4 6A
    Text: STW12NC60 N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NC60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.55Ω 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF STW12NC60 O-247 STW12NC60 diode F4 6A

    STW12NB60

    Abstract: No abstract text available
    Text: STW12NB60 N-CHANNEL 600V - 0.5Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.6Ω 12 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		PDF STW12NB60 O-247 STW12NB60

    Untitled

    Abstract: No abstract text available
    Text: KSM12N60C/KSMF12N60C 600V N-Channel MOSFET TO-220 Features • • • • • • TO-220F 12A, 600V, RDS on = 0.65Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description


    Original     		PDF KSM12N60C/KSMF12N60C O-220 O-220F

    STW12NB60

    Abstract: No abstract text available
    Text: STW12NB60 N-CHANNEL 600V - 0.5Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.6Ω 12 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		PDF STW12NB60 O-247 STW12NB60

    g12n60d1

    Abstract: AN7254 AN7260 HGTP12N60D1 G12N60D
    Text: HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device


    Original     		PDF HGTP12N60D1 O-220AB 500ns 150oC. g12n60d1 AN7254 AN7260 HGTP12N60D1 G12N60D

    600V Current Sensing N-Channel IGBT

    Abstract: Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V
    Text: Œ ï ^ « 1 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12A.600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r D S (O N) .0.27V


    OCR Scan     		PDF HGTB12N60D1C TS-001AA O-220) 100ns HGTB12N60D1C 600V Current Sensing N-Channel IGBT Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V

    12n60d1

    Abstract: 12n60d1c 600V Current Sensing N-Channel IGBT equivalent 12n60d1c HGTB12N60D1C 12n60d
    Text: HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Package Features • 12A, 600V JE D E C T S -001A A 5 LEAD TO -220 • r • Low VCe(SAT) at 25 A . 2.5V (Typ)


    OCR Scan     		PDF HGTB12N60D1C 100ns -001A HGTB12N60D1C 12n60d1 12n60d1c 600V Current Sensing N-Channel IGBT equivalent 12n60d1c 12n60d

    Untitled

    Abstract: No abstract text available
    Text: bflE J> HARRIS SEMICOND SECTOR • 43G2E71 0DSD2Sn ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Decem ber 1993 Features Package • 12 A ,600V • JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW r D S (O N ) .0.27V


    OCR Scan     		PDF 43G2E71 HGTB12N60D1C TS-001AA O-220) 100ns 60jia ICL7667

    12n60d1c

    Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
    Text: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V


    OCR Scan     		PDF M302271 0QSD25D HGTB12N60D1C 100ns HGTB12N60D1C M3D2B71 D05QSS3 12N60D1C 12n60d1c 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c

    12N60D1D

    Abstract: 12n60d1
    Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description


    OCR Scan     		PDF HGTG12N60D1D 500ns 12N60D1D 12n60d1