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    600F1 Search Results

    600F1 Result Highlights (4)

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    POE600F-12LB Coilcraft Inc SMPS Transformer Visit Coilcraft Inc
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    POE600F-12LD Coilcraft Inc SMPS Transformer Visit Coilcraft Inc
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    Kyocera AVX Components 600F120JT250XT

    CAP CER 12PF 250V C0G/NP0 0805
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    DigiKey 600F120JT250XT Reel 20,000 4,000
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    Kyocera AVX Components 600F1R1BT250XT

    CAP CER 1.1PF 250V C0G/NP0 0805
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    DigiKey 600F1R1BT250XT Reel 12,000 4,000
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    600F1R1BT250XT Cut Tape 3,387 1
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    Kyocera AVX Components 600F1R0BT250XT

    CAP CER 1PF 250V C0G/NP0 0805
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    DigiKey 600F1R0BT250XT Reel 8,000 4,000
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    600F1R0BT250XT Cut Tape 3,007 1
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    Kyocera AVX Components 600F150FT250XT

    CAP CER 15PF 250V C0G/NP0 0805
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    DigiKey 600F150FT250XT Reel 8,000 4,000
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    Kyocera AVX Components 600F1R8BT250XT

    CAP CER 1.8PF 250V C0G/NP0 0805
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    DigiKey 600F1R8BT250XT Cut Tape 6,244 1
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    600F1 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    600F100FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 1% NP0 0805 Original PDF
    600F100GT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 2% NP0 0805 Original PDF
    600F100JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 5% NP0 0805 Original PDF
    600F101FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 1% NP0 0805 Original PDF
    600F101GT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 2% NP0 0805 Original PDF
    600F101JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 5% NP0 0805 Original PDF
    600F110FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 11PF 250V 1% NP0 0805 Original PDF
    600F110JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 11PF 250V 5% NP0 0805 Original PDF
    600F120FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 12PF 250V 1% NP0 0805 Original PDF
    600F120JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 12PF 250V 5% NP0 0805 Original PDF
    600F121FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 120PF 250V 1% NP0 0805 Original PDF
    600F121JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 120PF 250V 5% NP0 0805 Original PDF
    600F150FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 15PF 250V 1% NP0 0805 Original PDF
    600F150GT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 15PF 250V 2% NP0 0805 Original PDF
    600F150JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 15PF 250V 5% NP0 0805 Original PDF
    600F151FT250XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 150PF 250V C0G/NP0 0805 Original PDF
    600F151JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 150PF 250V 5% NP0 0805 Original PDF
    600F180FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 18PF 250V 1% NP0 0805 Original PDF
    600F180JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 18PF 250V 5% NP0 0805 Original PDF
    600F181FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 180PF 250V 1% NP0 0805 Original PDF

    600F1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Rogers 4350B

    Abstract: GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 0, 4/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of


    Original     		PDF MW5IC970NBR1 Rogers 4350B GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987

    diode 400V 1A SOD-123

    Abstract: 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R GRM42-6Y5V106Z25V cap 0805 RF capacitor
    Text: TC3741 REV0_20070111 9.5 – 10.5 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 11 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1100 mA @ 10 V DESCRIPTION The TC3741 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high


    Original     		PDF TC3741 TC3741 1000PF 600F0R7BT 600F1R0BT GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L OD-123) diode 400V 1A SOD-123 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R cap 0805 RF capacitor

    600S3R9BT

    Abstract: GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 1, 5/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of


    Original     		PDF MW5IC970NBR1 600S3R9BT GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2020 NPT2020 NDS-037

    Untitled

    Abstract: No abstract text available
    Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%


    Original     		PDF NPTB00004A NPTB00004 NPTB00004A NDS-036

    Untitled

    Abstract: No abstract text available
    Text: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package


    Original     		PDF NPT2022 NPT2022 NDS-038

    bc857b nxp

    Abstract: C5750X7S2A106M Gan transistor C 1972 transistor
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


    Original     		PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 bc857b nxp C5750X7S2A106M Gan transistor C 1972 transistor

    ATC 600F

    Abstract: NPTB00004 transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF AD-015 Nitron
    Text: AD-015 AD-015 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.1 to 5.2GHz Application design AD-015 with a Nitronex NPTB00004 GaN HEMT device has approximately 29dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 11dB gain with 23% drain efficiency at 2.5% EVM


    Original     		PDF AD-015 AD-015 NPTB00004 29dBm 150mA. 100ma AD-015: ATC 600F transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF Nitron

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


    Original     		PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2020 NPT2020 NDS-037

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2010 NPT2010 NDS-034

    ATC 600F

    Abstract: NPTB00004 AD-016 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf
    Text: AD-016 AD-016 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.7 to 5.8GHz Application design AD-016 with a Nitronex NPTB00004 GaN HEMT device has approximately 27dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 10dB gain with 23% drain efficiency at 2.5% EVM


    Original     		PDF AD-016 AD-016 NPTB00004 27dBm 150mA. 100ma AD-016: ATC 600F 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf

    UMK325C7106MMT

    Abstract: No abstract text available
    Text: PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package


    Original     		PDF PXAC241702FC PXAC241702FC UMK325C7106MMT

    100B102KW

    Abstract: AN11130 66-0304-00004-000 600F0R 96798
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


    Original     		PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 100B102KW AN11130 66-0304-00004-000 600F0R 96798

    N/A9M07

    Abstract: No abstract text available
    Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from


    Original     		PDF AFT09MS007N AFT09MS007NT1 N/A9M07

    Untitled

    Abstract: No abstract text available
    Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%


    Original     		PDF NPTB00004A NPTB00004 NPTB00004A NDS-036

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.


    Original     		PDF CLF1G0035S-50 CLF1G0035S-50

    XMT031B5012

    Abstract: ATC100B5R6
    Text: NPT2022 Preliminary Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Plastic Package


    Original     		PDF NPT2022 NPT2010 50application, NDS-038 XMT031B5012 ATC100B5R6

    DTA124ECA

    Abstract: transistor PNP A124e R1 II
    Text: Transistors Digital transistors built-in resistors DTA124EE/DTA124EU A/DTA124EKA/ DTA124ECA/DTA124ESA •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors en ab le the configuration of an inverter circuit DTA124EE 1.0Î0.1


    OCR Scan     		PDF DTA124EE/DTA124EU /DTA124EKA/ DTA124ECA/DTA124ESA SC-70 DTA124EE E/DTA124EUA/DTA124EKA/DTA124ECA/DTA124ESA 100ii-200jit -600f-1m 50m-100n? -5m-10ra DTA124ECA transistor PNP A124e R1 II