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    600A IGBT 100KHZ Search Results

    600A IGBT 100KHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    600A IGBT 100KHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Spec.No.IGBT-SP-10011-R3 P1/4 6in1 IGBT Module MBB600TV6A PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )


    Original     		PDF IGBT-SP-10011-R3 MBB600TV6A

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-06005 R3 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-06005 MBN600E45A 000cycles)

    MBN600E45A

    Abstract: 600A 500v igbt L130N
    Text: IGBT MODULE Spec.No.IGBT-SP-06005 R2 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-06005 MBN600E45A 000cycles) MBN600E45A 600A 500v igbt L130N

    Untitled

    Abstract: No abstract text available
    Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-10006-R4 MBM600F17D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-10006-R4 MBM600F17D 000cycles)

    MBN600E45A

    Abstract: 600A 500v igbt
    Text: Spec.No.IGBT-SP-06005R0 IGBT MODULE MBN600E45A Preliminary Specification. Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-06005R0 MBN600E45A 000cycles) PDE-N1200D33C-0 MBN600E45A 600A 500v igbt

    CM600HG-130H

    Abstract: No abstract text available
    Text: CM600HG-130H Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts A D D D M8 NUTS (6 TYP.) C C C F E B F E E L E E G M Description: Powerex IGBTMOD™ Modules are designed for use in switching


    Original     		PDF CM600HG-130H Amperes/6500 100kHz CM600HG-130H

    CM600HG-130H

    Abstract: CM600HG IGBT 6500v cm508
    Text: CM600HG-130H Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts A D D D M8 NUTS (6 TYP.) C C C F E B F E E L E E G M Description: Powerex IGBTMOD™ Modules are designed for use in switching


    Original     		PDF CM600HG-130H Amperes/6500 100kHz CM600HG-130H CM600HG IGBT 6500v cm508

    MBN600C20

    Abstract: 600A igbt 100khz
    Text: IGBT MODU ODULE MBN600C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 2-M8 * High thermal fatigue durability. 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).


    Original     		PDF MBN600C20 000cycles) 125erse 600mA 100KHz 150nH 150nH, PDE-N600C20-0 MBN600C20 600A igbt 100khz

    MBN600C33A

    Abstract: MBN600C33
    Text: IGBT MODU ODULE MBN600C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. 2-M8 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling 4-φ5.8 diode - ultra soft fast recovery diode(USFD).


    Original     		PDF MBN600C33A 000cycles) 600mA 100KHz 150nH 150nH, PDE-N600C MBN600C33A MBN600C33

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-04010R5 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-04010R5 MBM600E17D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-04010R6 MBM600E17D Silicon N-channel IGBT FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.


    Original     		PDF IGBT-SP-04010R6 MBM600E17D 000cycles)

    Measurement of stray inductance for IGBT

    Abstract: circuit diagram for igbt hitachi igbt igbt module p11
    Text: IGBT MODULE Spec.No.IGBT-SP-04010R4 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-04010R4 MBM600E17D 000cycles) Measurement of stray inductance for IGBT circuit diagram for igbt hitachi igbt igbt module p11

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-04010R6 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-04010R6 MBM600E17D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H ● IC . 600A ● VCES . 1700V


    Original     		PDF CM600E2Y-34H

    hvigbt diode

    Abstract: CM600E2Y-34H
    Text: MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H ● IC . 600A ● VCES . 1700V


    Original     		PDF CM600E2Y-34H hvigbt diode CM600E2Y-34H

    CM600HB-90H

    Abstract: 7400 ic diagram
    Text: MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HB-90H ● IC . 600A ● VCES . 4500V


    Original     		PDF CM600HB-90H 0135K/ CM600HB-90H 7400 ic diagram

    PER12

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V


    Original     		PDF CM600DY-34H PER12

    Converter for Induction Heating

    Abstract: igbt for HIGH POWER induction heating CM600DY-34H
    Text: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V


    Original     		PDF CM600DY-34H Converter for Induction Heating igbt for HIGH POWER induction heating CM600DY-34H

    CM600E2Y-34H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600E2Y-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE


    Original     		PDF CM600E2Y-34H 080K/W CM600E2Y-34H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM600HG-130H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600HG-130H ● IC . 600A ● VCES . 6500V


    Original     		PDF CM600HG-130H /-15V 000A/Â

    CM600DY-34H

    Abstract: transistor su 312
    Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600DY-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE


    Original     		PDF CM600DY-34H 080K/W CM600DY-34H transistor su 312

    mbm600

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-07034 R1 MBM600E17E TARGET SPEC. Silicon N-channel IGBT 1700V E version OUTLINE DRAWING Unit in mm FEATURES * Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. * Low driving power: Low input capacitance


    Original     		PDF IGBT-SP-07034 MBM600E17E 000cycles) mbm600

    CM600HB-90H

    Abstract: bipolar transistor 124 e
    Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600HB-90H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		PDF CM600HB-90H 015K/W 030K/W CM600HB-90H bipolar transistor 124 e