FZ1200R33KF1
Abstract: igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv
Text: Application and Characteristics of High Voltage IGBT Modules M.Hierholzer, eupec GmbH & Co KG, Warstein, Germany A.Porst, Th.Laska, H.Brunner, Siemens AG, München, Germany New IGBT modules with blocking voltage of 3300V and current capability up to 1200A became
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200V/1600V
FZ1200R33KF1
FZ1200R33KF1
igbt 500V 2A
IGBT 3.3kv
eupec igbt 3.3kv
siemens IGBT 600a
Brunner
IGBT FZ1200
HIGH VOLTAGE DIODE 3.3kv
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k08T120
Abstract: No abstract text available
Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D
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IKW08T120
BUP305D
k08T120
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ge traction motor
Abstract: CM400HA-34H 500V welding inverter PD4100 CM400HA
Text: CM400HA-34H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 400 Amperes/1700 Volts A B R - M4 THD (2 TYP.) N Q - DIA. (4 TYP.) E J H A B P - M8 THD (2 TYP.) H G E C G M F M D K L C E E Features:
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CM400HA-34H
Amperes/1700
20-25kHz)
ge traction motor
CM400HA-34H
500V welding inverter
PD4100
CM400HA
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k08T120
Abstract: IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D
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IKW08T120
BUP305D
k08T120
IKW08T120
BUP305D
PG-TO-247-3
diode of 5a 5v 10kHz
RG81
mj04
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PDF
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Untitled
Abstract: No abstract text available
Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D
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IKW15T120
BUP313D
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Untitled
Abstract: No abstract text available
Text: IKP20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKP20N60T
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKP10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKP10N60T
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Untitled
Abstract: No abstract text available
Text: IKW20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKW20N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP10N60T
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Untitled
Abstract: No abstract text available
Text: IHW15T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications
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IHW15T120
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K08T120
Abstract: PG-TO-247-3-21 k08t12 5M MARKING CODE DIODE 5A 100V IKW08T120
Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Short circuit withstand time – 10µs Designed for : - Frequency Converters
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IKW08T120
K08T120
PG-TO-247-3-21
k08t12
5M MARKING CODE DIODE 5A 100V
IKW08T120
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H20T120
Abstract: IHW20T120 2R210 rg-35
Text: IHW20T120 Soft Switching Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • C Short circuit withstand time – 10µs Designed for : - Soft Switching Applications
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IHW20T120
H20T120
IHW20T120
2R210
rg-35
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K15T120
Abstract: K15T120 igbt IKW15T120 BUP313D PG-TO-247-3
Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D
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IKW15T120
BUP313D
K15T120
K15T120 igbt
IKW15T120
BUP313D
PG-TO-247-3
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKB10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKB10N60T
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H15T120
Abstract: IHW15T120 Q67040-S4651 integrated circuit MAR 521
Text: IHW15T120 Soft Switching Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications
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IHW15T120
Mar-04
H15T120
IHW15T120
Q67040-S4651
integrated circuit MAR 521
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H20T120
Abstract: IHW20T120 e3055 rg-35 IGBT 400V 100KHZ 30A
Text: IHW20T120 Soft Switching Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications - Induction Heating
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IHW20T120
Apr-04
H20T120
IHW20T120
e3055
rg-35
IGBT 400V 100KHZ 30A
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Untitled
Abstract: No abstract text available
Text: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKB10N60T
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k08t120
Abstract: BUP30 k08t12
Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D
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IKW08T120
BUP305D
k08t120
BUP30
k08t12
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PDF
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Untitled
Abstract: No abstract text available
Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D
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IKW08T120
BUP305D
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k10t60
Abstract: diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A
Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs
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IKA10N60T
PG-TO-220-3-31
O-220
k10t60
diode 10a 400v
fast recovery diode 600v 12A
IKA10N60T
fast recovery diode 1a trr 200ns
10A 600A DC diode
IGBT DRIVE 50V 300A
diode 400V 4A
600v 75a
fast recovery diode 1000v 10A
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IRGDDN600K06
Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
Text: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"
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OCR Scan
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IRGDDN600K06
IRGRDN600K06
C-1016
MA55455
30V 600A igbt
600A 500v igbt
mosfet 600V 600A circuit
INT-A-PAK Package
int-a-pak
OF IGBT 600A 600V
10 600a - 030
DOUBLE INT-A-PAK Package
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IRGDDN600K06
Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Text: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses
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OCR Scan
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IRGDDN600K06
1RGRDN600K06
C-1016
mosfet 600V 600A circuit
power mosfet 600v 600A
lm 2604
vqe 208 e
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DOUBLE INT-A-PAK Package
Abstract: No abstract text available
Text: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"
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OCR Scan
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DDN600M06
RDN600M06
Outline13
C-456
DOUBLE INT-A-PAK Package
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IRGDDN600M06
Abstract: power mosfet 600v 600A IRGRDN600M06 mosfet 600V 600A circuit
Text: International S Rectifier Provisional Data Sheet P D -9 .1176 IRGDDN600M06 IRGRDN600MQ6 "SINGLE SWITCH" IGBT DOUBLE -A-PAK Low conduction loss IGBT IR G D D . IR G R D . ? • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"
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OCR Scan
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IRGDDN600M06
IRGRDN600M06
Outline13
C-456
SS452
power mosfet 600v 600A
IRGRDN600M06
mosfet 600V 600A circuit
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