Untitled
Abstract: No abstract text available
Text: AUGUST 1995 DS2012SF DS4191-2.3 DS2012SF RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 6000V VRRM 1015A IF AV 16500A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.
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DS2012SF
DS4191-2
6500A
DS2012SF60
DS2012SF59
DS2012SF58
DS2012SF57
DS2012SF56
DS2012SF55
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 Average forward current. . 1700A • V r r m Repetitive peak reverse voltage. . 6000V • Q rr Reverse recovery charge. . 1500jiC
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FD2000DU-120
1500jiC
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thyristor cdi
Abstract: 6000v power diode FD3000AU-120DA dc cdi 6300a thyristor 2800A gct thyristor
Text: MITSUBISHI SOFT RECOVERY DIODE FD3000AU-120DA HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE OUTLINE DRAWING FD3000AU-120DA Dimensions in mm f 130 ± 0.2 f 190max ¡VRRM Repetitive peak reverse voltage . 6000V ¡IT AV Average on-state current . 3000A
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FD3000AU-120DA
190max
thyristor cdi
6000v power diode
FD3000AU-120DA
dc cdi
6300a
thyristor 2800A
gct thyristor
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DS1112SG60
Abstract: No abstract text available
Text: @ DS1112SG M IT E L Rectifier Diode S E M IC O N D U C T O R Supersedes January 1997 version, DS4181 - 3.1 DS4181 - 3.2 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 6000V IF av,
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DS1112SG
DS4181
0500A
DS1112SG60
DS1112SG59
DS1112SG58
DS1112SG57
DS1112SG56
DS1112SG55
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DS4191
Abstract: No abstract text available
Text: DS2012SF MITEL @ Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4191 - 2.3 DS4191 - 2.4 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 6000V I F a v ,
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DS2012SF
DS4191
6500A
DS2012SF60
DS2012SF59
DS2012SF58
DS2012SF57
DS2012SF56
DS2012SF55
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application FULL WAVE RECTIFIER
Abstract: FD2000DU-120
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 OUTLINE DRAWING Dimension in mm φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2 φ 130 ± 0.2 ● IF AV Average forward current .1700A ● VRRM Repetitive peak reverse voltage .6000V
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FD2000DU-120
application FULL WAVE RECTIFIER
FD2000DU-120
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Untitled
Abstract: No abstract text available
Text: Si GEC P L E S S E Y august 1995 S E M I C O N D U C T O R S DS4191-2.3 DS2012SF RECTIFIER DIODE KEY PARAMETERS VRRM 6000V lF Av, 1015A lFSM 16500A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding.
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DS4191-2
DS2012SF
6500A
DS2012SF60
DS2012SF59
DS2012SF58
DS2012SF57
DS2012SF56
DS2012SF55
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FD1500AU-120DA
Abstract: gct thyristor
Text: MITSUBISHI SOFT RECOVERY DIODE ARY FD1500AU-120DA MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD1500AU-120DA
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FD1500AU-120DA
120MAX
FD1500AU-120DA
gct thyristor
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STATIC VAR COMPENSATOR
Abstract: 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A
Text: Mitsubishi Ultra High Voltage Thyristors / Diodes FT1500AU-240 FD2000DU-120 1500 Amperes / 12000 Volts (2000 Amperes / 6000 Volts) Mitsubishi Ultra High Voltage Thyristors are used in high voltage AC Switch and Static Var Compensator (SVC) applications.
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FT1500AU-240
FD2000DU-120
Amperes/12000
STATIC VAR COMPENSATOR
12V DC sine wave inverters circuit diagram
press pack thyristor 9000 VDRM
press pack thyristor 10000 VDRM
HIGH VOLTAGE THYRISTOR
thyristor 12000V 1500A
press pack thyristor
press pack thyristor 8000 VDRM
high power thyristor Vdrm 6000
thyristor 2800A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE INVERTER APPLICATION SG6000JX27 TOSHIBA GATE TURN-OFF THYRISTOR SG6000JX27 Repetitive Peak Off-State Voltage V d RM = 6000V R.M.S On-State Current i T RMS = 2700A Peak Turn-Off Current i T G Q M = 6000A Critical Rate of Rise of On-State Current : d i/d t = 500A / jus
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SG6000JX27
600mA
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RECTIFIER DIODES ON Semiconductor
Abstract: Thyristors GTO 6500V "Power Semiconductor Applications" Fast Switching Thyristors
Text: Westcode semiconductors and Brush Traction engineer longer life for ySTs In 2003/4, Brush Traction was tasked with refurbishment of the HSTs electrical equipment. These popular workhorses, now 30 years old, need to be easily maintainable and fully supported
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IGBTs-2400A/4500V
RECTIFIER DIODES ON Semiconductor
Thyristors
GTO 6500V
"Power Semiconductor Applications"
Fast Switching Thyristors
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6000v power diode
Abstract: T1250V M6000A toshiba LTM 08 SG6000JX27
Text: TOSHIBA TENTATIVE INVERTER APPLICATION • • • • • • SG6000JX27 TOSHIBA GATE TURN-OFF THYRISTOR SG6000JX27 Unit in mm Repetitive Peak Off-State Voltage : V d r m ;= 6000V R.M.S On-State Current : It RMS = 2700A Peak Turn-Off Current : I tG Q M = 6000A
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SG6000JX27
--6000A,
current--600mA
6000v power diode
T1250V
M6000A
toshiba LTM 08
SG6000JX27
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schematic thyristor based inverter
Abstract: HIGH VOLTAGE DIODE 6kv Thyristor 6kV GTO MODULE mitsubishi inverter fr schematic power GCT Thyristor 6kV 500a gct thyristor GTO thyristor 4500V 4000A DIODE 6kv
Text: A 6KV/5KA REVERSE CONDUCTING GCT Y. Yamaguchi*, K. Oota*, K. Kurachi*, F. Tokunoh*, H. Yamaguchi*, H. Iwamoto*, J. Donlon*, E. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan
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FG6000AU
-120DA
6000AX
-120DS
R5000AX
schematic thyristor based inverter
HIGH VOLTAGE DIODE 6kv
Thyristor 6kV
GTO MODULE
mitsubishi inverter fr schematic
power GCT
Thyristor 6kV 500a
gct thyristor
GTO thyristor 4500V 4000A
DIODE 6kv
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TLP721F
Abstract: No abstract text available
Text: GaAs IRED & PHOTO-TRANSISTOR TLP721F TLP721F OFFICE MACHINE. U nit in mm SWITCHING POWER SUPPLY. The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic DIP package. All param eters are tested to the specification of TLP721.
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TLP721F
TLP721F)
TLP721F
TLP721.
UL1577,
E67349
BS415
SS4330784
VDE0884
VDE0804
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NTE398
Abstract: transistor VCE 6000V
Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3981 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE3081
NTE3981
NTE398
transistor VCE 6000V
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NTE3082
Abstract: NPN Darlington transistor transistor VCE 6000V
Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.
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NTE3082
NTE3982
NTE3082
NPN Darlington transistor
transistor VCE 6000V
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NTE3081
Abstract: transistor VCE 6000V
Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE3081
NTE3081
transistor VCE 6000V
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transistor VCE 6000V
Abstract: dual infrared diode Infrared Emitting Diode NTE3082
Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line
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NTE3082
NTE3082
transistor VCE 6000V
dual infrared diode
Infrared Emitting Diode
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dual infrared transistor
Abstract: dual infrared diode dual Phototransistor NTE3081 transistor VCE 6000V
Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual−in−line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE3081
NTE3081
dual infrared transistor
dual infrared diode
dual Phototransistor
transistor VCE 6000V
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Untitled
Abstract: No abstract text available
Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line
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NTE3082
NTE3082
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g84 diode
Abstract: No abstract text available
Text: RECTIFIER, 6kV, 500mA, 350ns IDIOTI i s t i January 7, 1998 QUICK REFERENCE DATA • • • • PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r= 6000V If= 500mA trr= 35QnS
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500mA,
350ns
TEL805-498-2111
500mA
35QnS
g84 diode
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ADD700S28
Abstract: ADD700
Text: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODES MODULE *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request
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ADD700
ADD700
ADD700S28
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ADD500S33HVI
Abstract: No abstract text available
Text: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODES MODULE *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request
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ADD500
ADD500S33HVI
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Untitled
Abstract: No abstract text available
Text: RECTIFIER, 6kV, 500mA, 350ns January 7, 1998 QUICK REFERENCE DATA • • • • PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r= 6000V If= 500mA trr= 350nS Vf= 11.2V
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500mA,
350ns
TEL805-498-2111
500mA
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PDF
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