work-wizard
Abstract: pneumatic arm KZG Series BJ10 M324 M605
Text:
|
Original
|
|
PDF
|
802830
Abstract: DKPI 24 Vdc 801953 Weidmuller 824204 dkt4 500 DKZ 600 DKZ 801863 DKR 801961 818404 a 2212 opto
Text: Produktübersicht Minikoppler 6 Digitale Signalverarbeitung 6 6 6 W Ein- und Ausgaben Relaiskoppler DKR Seite 6-6/6 bis 6/7 Ein- und Ausgaben Optokoppler DKO Seite 6-6/8 bis 6/12 SO-Impulsgeber Optokoppler DKO Seite 6-6/13 6 Schaltverstärker Optokoppler DKO
|
Original
|
95/100U
135/155U
10-poliges
802830
DKPI 24 Vdc 801953 Weidmuller
824204
dkt4
500 DKZ
600 DKZ
801863
DKR 801961
818404
a 2212 opto
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Dual, 10-Bit nanoDAC with 2 ppm/°C Reference, SPI Interface AD5313R FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Low drift 2.5 V reference: 2 ppm/°C typical Tiny package: 3 mm x 3 mm, 16-lead LFCSP Total unadjusted error TUE : ±0.1% of FSR maximum
|
Original
|
10-Bit
AD5313R
16-lead
CP-16-22
RU-16
|
PDF
|
600 DKZ
Abstract: No abstract text available
Text: Data Sheet Dual, 10-Bit nanoDAC with 2 ppm/°C Reference, SPI Interface AD5313R FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Low drift 2.5 V reference: 2 ppm/°C typical Tiny package: 3 mm x 3 mm, 16-lead LFCSP Total unadjusted error TUE : ±0.1% of FSR maximum
|
Original
|
10-Bit
AD5313R
16-lead
AD5313RBCPZ-RL7
AD5313RBRUZ
AD5313RBRUZ-RL7
600 DKZ
|
PDF
|
AMD Athlon 64 X2 4800 pin diagram
Abstract: MAX8774 ME2N7002E 87541 amd SB460 ICS951462 rs485mc TMDTL50HAX4CT PC87541 TC7SZ08FU
Text: 5 4 3 2 1 ES2 BLOCK DIAGRAM AMD S1 HOST 133/166MHz PCIE 100MHz VGA 96MHz USB 48MHz REF 14MHz D DDRII-SODIMM1 PG 8,9 533/ 667 MHZ DDR II 1 Sempron Rev.F2 Single-Core 1.6G Single-Core 25W Normal, up to 35W 638 S1g1 socket DDRII-SODIMM2 CPU VR CLOCK GENERATOR
|
Original
|
ICS951462
133/166MHz
100MHz
96MHz
48MHz
14MHz
RS485MC
25MHz
RTL8101E
47P/50V/NPO
AMD Athlon 64 X2 4800 pin diagram
MAX8774
ME2N7002E
87541
amd SB460
ICS951462
rs485mc
TMDTL50HAX4CT
PC87541
TC7SZ08FU
|
PDF
|
HYB18T256400AF37
Abstract: 600 DKZ
Text: . HYB18T256400/800/160AF 256Mb DDR2 SDRAM PRELIMINARY DATASHEET Rev. 0.6 4.03 Features • High Performance: • Write Latency = Read Latency -1 Speed Sorts -5 DDR2 -400 -3.7 DDR2 -533 -3 DDR2 -667 Units Bin (CL-trcd-trp) 3-3-3 4-4-4 4-4-4 tck max. Clock
|
Original
|
HYB18T256400/800/160AF
256Mb
HYB18T256400AF37
600 DKZ
|
PDF
|
HYB18T512400AF5
Abstract: 600 DKZ
Text: . HYB18T512400/800/160AF 512Mb DDR2 SDRAM PRELIMINARY DATASHEET Rev. 1.05 4.03 Features • High Performance: • Write Latency = Read Latency -1 -5 DDR2 -400 -3.7 DDR2 -533 -3 DDR2 -667 Units 3-3-3 4-4-4 4-4-4 tck max. Clock Frequency 200 266 333 MHz Data Rate
|
Original
|
HYB18T512400/800/160AF
512Mb
HYB18T512400AF5
600 DKZ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
HY5PS12421
HY5PS12821
HY5PS121621
512Mb
|
PDF
|
vm 256MB DDR 400
Abstract: 128 MB DDR2 SDRAM HYB18T256800AC-5 DDR2-400 HYB18T256160AC-3 HYB18T256160AC-5 HYB18T256400AC HYB18T256400AC-3 HYB18T256400AC-5 HYB18T256800AC
Text: D a t a S h e e t , V0 . 8 , A u g . 2 0 0 3 HYB18T256400AC HYB18T256800AC HYB18T256160AC 2 5 6 M b i t D D R 2 SD R A M Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-08-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
|
Original
|
HYB18T256400AC
HYB18T256800AC
HYB18T256160AC
HYB18T256400/800/160AC
256Mb
vm 256MB DDR 400
128 MB DDR2 SDRAM
HYB18T256800AC-5
DDR2-400
HYB18T256160AC-3
HYB18T256160AC-5
HYB18T256400AC
HYB18T256400AC-3
HYB18T256400AC-5
HYB18T256800AC
|
PDF
|
DDR2-400
Abstract: HYB18T512160AC-5 HYB18T512400AC HYB18T512400AC-5 HYB18T512800AC HYB18T512800AC-5 600 DKZ
Text: D a t a S h e e t , V 1. 0 8 , A u g . 2 0 0 3 HYB18T512400AC HYB18T512800AC HYB18T512160AC 5 1 2 M b i t D D R 2 SD R A M Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-08-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
|
Original
|
HYB18T512400AC
HYB18T512800AC
HYB18T512160AC
HYB18T512400/800/160AC
512Mb
DDR2-400
HYB18T512160AC-5
HYB18T512400AC
HYB18T512400AC-5
HYB18T512800AC
HYB18T512800AC-5
600 DKZ
|
PDF
|
feme relais
Abstract: Rapa relay 12vdc Rapa Relais gruner RELAY 275 gruner RELAY haller Relays SDS Relais ZETTLER AZ haller relais feme relay
Text: Relay Coupler 58 Relay Coupler Contact material Properties Application Fine silver AG 99 % - inexpensive - average tendency to weld and average resistance to burn-off - subject to corrosion in sulphurous atmosphere - high mechanical stability - low tendency to weld
|
Original
|
|
PDF
|
HYB18T256160AC-3
Abstract: HYB18T256160AC-5 HYB18T256400AC HYB18T256400AC-3 HYB18T256400AC-5 HYB18T256800AC HYB18T256800AC-5
Text: D a t a S h e e t , V 1 . 0 , M a r c h 2 0 04 HYB18T256400AC HYB18T256800AC HYB18T256160AC 256 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-03-24 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
|
Original
|
HYB18T256400AC
HYB18T256800AC
HYB18T256160AC
HYB18T256400/800/160AC
256Mb
HYB18T256160AC-3
HYB18T256160AC-5
HYB18T256400AC
HYB18T256400AC-3
HYB18T256400AC-5
HYB18T256800AC
HYB18T256800AC-5
|
PDF
|
HYB18T512160AC-5
Abstract: HYB18T512400AC HYB18T512400AC-5 HYB18T512800AC HYB18T512800AC-5
Text: D a t a S he et , V 1. 1 2 , M a r c h 2 0 04 HYB18T512400AC HYB18T512800AC HYB18T512160AC 512 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-03-24 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
|
Original
|
HYB18T512400AC
HYB18T512800AC
HYB18T512160AC
DDR2-667
HYB18T512160AC-5
HYB18T512400AC
HYB18T512400AC-5
HYB18T512800AC
HYB18T512800AC-5
|
PDF
|
1G DDR2 128 x 8
Abstract: DDR2-400 DDR2-533 DDR2-667 HYB18T256160A HYB18T256160AF HYB18T256400AF HYB18T256800AF ddr infineon hyb vm 256MB DDR 400
Text: D a t a S he et , V 1. 0 2 , M a y 2 0 04 HYB18T256400AF HYB18T256800AF HYB18T256160AF 256 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-04-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
|
Original
|
HYB18T256400AF
HYB18T256800AF
HYB18T256160AF
DDR2-667
1G DDR2 128 x 8
DDR2-400
DDR2-533
DDR2-667
HYB18T256160A
HYB18T256160AF
HYB18T256400AF
HYB18T256800AF
ddr infineon hyb
vm 256MB DDR 400
|
PDF
|
|
ODT01
Abstract: BA2A13
Text: D a t a S h e e t , V 0. 9 2 , D e c . 2 0 0 3 HYB18T256400AC HYB18T256800AC HYB18T256160AC 256 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2003-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
|
Original
|
HYB18T256400AC
HYB18T256800AC
HYB18T256160AC
DDR2-667
ODT01
BA2A13
|
PDF
|
JMS27656
Abstract: ZD - 98F FFD socapex MIL-PRF-87937 amphenol 900047 DOC-000503-ANG JMS27468 900142 ZD 98F DOC-000030-ANG
Text: Amphenol LJT / HE 308 MIL-DTL-38999 Series I Subminiature cylindrical connectors www.amphenol-socapex.com - www.38999-solutions.com Amphenol <<< LJT / HE 308 Description Amphenol Socapex is a MIL-DTL-38999 series I standard QPL and HE308 qualified manufacturer. The LJT product
|
Original
|
MIL-DTL-38999
38999-solutions
HE308
DOC-000031-ANG/B
JMS27656
ZD - 98F
FFD socapex
MIL-PRF-87937
amphenol 900047
DOC-000503-ANG
JMS27468
900142
ZD 98F
DOC-000030-ANG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet — preliminary data Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz ■ Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK ■ Air data rate from 1 to 500 kbps
|
Original
|
QFN20
|
PDF
|
spirit1
Abstract: EN-13757 ook deMODULATOR ghz EN-13757-4 ST 9918 EN137574 wireless encrypt RCF up 2201 receiver pll 169mhz sk 8060
Text: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet — preliminary data Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz ■ Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK ■ Air data rate from 1 to 500 kbps
|
Original
|
|
PDF
|
VARTA L2 400 640
Abstract: VARTA 170 dk VARTA 500 RST VARTA 250 dk VARTA 100 RST VARTA 100 DKO Battery VARTA 60 DKO Battery VARTA 60 dk VARTA L2 400 varta 225 dkz
Text: Portable and Micro Batteries Type Range 40 107 ex/0589 \ Standard — Series RS for Normal Rates of Discharge up to 6 CA 60 l10 Type Order-No. for bare cell in shrink sleave Nominal capacity at 0.2 CA Discharge current 0.2 CA Charge current 14 hours RS*
|
OCR Scan
|
ex/0589
D-3000
VARTA L2 400 640
VARTA 170 dk
VARTA 500 RST
VARTA 250 dk
VARTA 100 RST
VARTA 100 DKO Battery
VARTA 60 DKO Battery
VARTA 60 dk
VARTA L2 400
varta 225 dkz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: |Ordering number : EN4163 Asynchronous Silicon Gate CM O S LSI LC36256AL, AML-70/85/10/12 No. 4163 S A iIVO 256 K 32768 words x 8 bits SRA M Overview Package Dimensions The LC 36256A L, A M L -70/85/10/12 are fully asynchronous silicon gate CMOS static RAMs with an
|
OCR Scan
|
EN4163
LC36256AL,
AML-70/85/10/12
6256A
DIP28
LC36256low-level.
LC36256AU
DG153bb
|
PDF
|
500 DKZ
Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt
|
OCR Scan
|
150/160-MHz-Band
500 DKZ
TFK 4 314
valvo
TELEFUNKEN* U 111 B
str w 6052
tfk 1007
tfk 014
Schwingquarz Telefunken
TFK S 417 T
valvo transistoren
|
PDF
|
D17012GF
Abstract: 78MEC D17012GF-011 D17012G ltaft et 4-1-fm bfy40 d17012 tlu 011 uPD6121G
Text: i r — • ts— h Ü 5 È M O S Â « @ £ & N E M O S Integrateci Circuit C j F M , M P L L J l ) W Æ u , L W S è v P 1 D f n - t > i r 7 (¥ # c ) - 9 - < 1 2 G F - 1 1 m h P “ 7 >u P D 1 7 0 1 2 G F -0 1 1 {â ^ :tâ :^ lÆ iiO P L L jl> ra '> > iz -y -< 1 f^ ïfc F M ) MW, L W if
|
OCR Scan
|
//PD17012GF-011
200MHz7Â
TFM18j^
D17012GF
78MEC
D17012GF-011
D17012G
ltaft
et 4-1-fm
bfy40
d17012
tlu 011
uPD6121G
|
PDF
|
73fo
Abstract: IC KSS 344 tfk 1490 d17012gf MW26 23 tfk 101 cd7y ib7a JCOP lwm 1602 d
Text: M O S ili* 0 E £ M O S j u F M , M W , L W P D f a - ± 1 7 ^ fc 1 2 In te g ra te d G F - C ir c u it 5 4 F8 ^ , MW, LW ^a. tl/cC M O S LSI T 'fo PLLjI)}j£t& '>>'tz-tKif • T i ' 3 fc to, h P ~ 7 , LCD3> h P - ? / * - •
|
OCR Scan
|
uPD17012GF-054
OAM77
FM18j^
73fo
IC KSS 344
tfk 1490
d17012gf
MW26
23 tfk 101
cd7y
ib7a
JCOP
lwm 1602 d
|
PDF
|
kcd3
Abstract: UPD6121f PD17012GF KT77 7012GF 51I7 KVF1 FC-7 3P ks-49 KTVA
Text: T — $ • S '— h S M O S * a iilS & M O S In te g ra te d C ircuit j t t P D 1 i f * (M W FM, MW , L W f i - t P L U a * lB ^ 7 <fc * > ' : ] > 1 2 G F - 5 3 m h P - 7 AiP D 1 7 0 1 2 G F -0 5 3 ti^ # ^ f& < 7 P L L JiiÈ S '> > -tri# -< 1 f^ F M > MW, L W* . ! —
|
OCR Scan
|
LW31J.
OAM77
kcd3
UPD6121f
PD17012GF
KT77
7012GF
51I7
KVF1
FC-7 3P
ks-49
KTVA
|
PDF
|