rm8 bobbin
Abstract: rm6 type bobbin RM6 coil former low profile rm14 ferroxcube bobbin RM-14 BOBBIN RM12 RM7 CORE CBW121 CBW122
Text: Ferroxcube RM, RM/I, RM/ILP cores and accessories Soft Ferrites CBW609 2002 Feb 01 1 Ferroxcube RM, RM/I, RM/ILP cores and accessories Soft Ferrites PRODUCT OVERVIEW AND TYPE NUMBER STRUCTURE RM 6 S − 3H3 − A 250 / N − X Product overview RM cores CORE TYPE
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CBW609
RM14/ILP
RM14/I
RM12/ILP
RM12/I
CBW121
RM10/ILP
RM10/I
CBW122
rm8 bobbin
rm6 type bobbin
RM6 coil former low profile
rm14
ferroxcube bobbin
RM-14
BOBBIN RM12
RM7 CORE
CBW121
CBW122
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philips 3h1 ferrite material
Abstract: ferroxcube handbook old ferrite ferroxcube Ee core 3H1 ferroxcube philips ferroxcube 4c65 ferroxcube 3E1 3h1 ferrite material philips 3f3 ferrite philips 3f3 ferrite toroid philips p14/8 3h1
Text: PRODUCT SELECTION GUIDE 2001 A Y AG E O C O M PA N Y List of contents page This Selection Guide offers an overview of the product ranges made by FERROXCUBE It contains short-form data for quick selection by development engineers and offers an overview for
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E45329
Abstract: CPH-ETD39-1S-16P IEC-68-2-20 solderability 4322 021 30 ETD39 420sec
Text: + — I — I 44,6 max. Ill a m 3 E IE 111 IL b € w A. 1— t • t- 4 - 6 - <| j). <|) <|> <|> 6 - i- HOLE PATTERN: i T I T ’ T o+ o T- vO _1_ I I T -O ■ H >— <> H >— <>—<)— <>- 5,08 35,56 47,8 max. 28,2 0.2 25,7 min. \ A m o+ o m ■& rn r t
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420SEC)
E45329
UL94V-0.
CPH-ETD39-1S-16P
CPH-ETD39-1S-16P
IEC-68-2-20 solderability
4322 021 30
ETD39
420sec
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Untitled
Abstract: No abstract text available
Text: I I • MAINTENANCE TYPE bbS3T31 a03^7Mfi 360 ■ APX B L y g 3 A N ANER PHI LIPS/DISCRETE hlZ D_ V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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bbS3T31
005T7S7
BLY93C
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transistor 131 8D
Abstract: transistor k 3728 QBE+61.2+dp2
Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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BLY90
transistor 131 8D
transistor k 3728
QBE+61.2+dp2
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Untitled
Abstract: No abstract text available
Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran
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001420b
BLY93A
r3774
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • ^53*131 DDETlfl^ 40fl BLV99 APX N-P-N silicon planar epitaxial transistor primarily intended for use as a driver-stage in base stations in the 900 MHz communications band. Features: • emitter-ballasting resistors for an optimum temperature profile
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BLV99
OT172A1)
OT172A1.
bbS3T31
7Z94683
7Z94684
7Z94685
960MHz;
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HF 331 transistor
Abstract: No abstract text available
Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and
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BLY92A
HF 331 transistor
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BLY93C
Abstract: BLY93 IEC134
Text: 11 MAINTENANCE TYPE • tfaS3131 Q02T7Mfl 3B0^■ APX BLY93A _ N AMER PHILIPS/DISCRETE bTE D_ V.H.F. POWER TRANSISTOR N-P-N e p ita xia l planar tran sisto r intended fo r use in class-A, B and C operated m ob ile, in d u stria l and m ilita ry tra n s m itte rs w ith a supply voltage o f 28 V . The tra n sisto r is resistance stabilized. Every tra n
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bbS3T31
OT-56.
BLY93C
BLY93
IEC134
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transistor rf cm 1104
Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
Text: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and
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BLY92A
T-33-Ã
OT-48/2.
transistor rf cm 1104
BLY92A
transistor rf m 1104
transistor m 1104
TRANSISTOR D 1978
T3309
4312 020 36640
transistor 1971
1102 transistor
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BLY94
Abstract: philips bly94
Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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002T75fl
BLY94
7Z67S60
BLY94
philips bly94
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transistor rf cm 1104
Abstract: BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971
Text: 11 PHILIPS INTERNATIONAL MAINTENANCE TYPE 711DÛ2b DQS7TÌ3 3 E IPHIN 41E D BLY92A T -3 3 -0 9 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage o f 28 V. The transistor Is resistance stabilized and
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BLY92A
T-33-Of
transistor rf cm 1104
BLY92A
transistor 1971
3309 power transistor
transistor VHF 1104
PHILIPS FW 36 20
431202036640 choke
T3309
bly92
transistor c 1971
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Untitled
Abstract: No abstract text available
Text: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and
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bb53T31
BLY91A
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b b S B ' i a i □QSt17Q5 2flb WAPX b'JE D X BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized
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QSt17Q5
BLY89C
Z77109
7Z7710S
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BLW81
Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
Text: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.
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7Z77164
BLW81
IEC134
Vrr-12
philips 2222 807 trimmer
philips 2222 808 trimmer
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BTB 600 BR
Abstract: WE VQE 11 E WE VQE 24 E BLU97 CN-500 multilayer DB128 VQA 27 F
Text: N AMER PHILIPS/DISCRETE b^E D • 0D2flfl7b 23e] BLU97 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 47 0 MHz band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
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BLU97
OT122A)
8-32UNCl
QZ666Z
BTB 600 BR
WE VQE 11 E
WE VQE 24 E
BLU97
CN-500
multilayer
DB128
VQA 27 F
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 86D 0 1 8 9 4 ObE D • bb53T31 0 0 m i 3 2 f^ 3 Y -6 1 ’~ D BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V . The transistor is resistance stabilized and is
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bb53T31
BLY88A
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BLV91
Abstract: philips capacitor 021 IEC134 sot172 TRIMMER
Text: bSE D • 711Dû5b 0Qb3G21 715 H P H I N BLV91 PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N sil icon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 9 0 0 M H z band. Features: • multi-base structure and diffused emitter-ballasting resistors fo r an optim um tem perature profile
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BLV91
OT-172)
OT-172A1.
711005b
G0b3D57
BLV91
philips capacitor 021
IEC134
sot172
TRIMMER
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Untitled
Abstract: No abstract text available
Text: N AUER PH ILIPS /D ISC R ETE b^E bb53^31 DQ2T4EM ITH I BLW81 D U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.
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BLW81
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Untitled
Abstract: No abstract text available
Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
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Untitled
Abstract: No abstract text available
Text: • bbS3^3i o o a ^ A i f ao? h a p x BLW29 N AnER p h i l i p s / j i s c r e t e blE I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power
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BLW29
BFQ42
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PDF
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Untitled
Abstract: No abstract text available
Text: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is
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BLX69A
bb53c
bb53131
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE L IE b b s a ' m 0 0 2 ^ 7 4 ssi « BLY87C/01 D apx Jl V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage o f 13,5 V. The transistor is resistance stabilized and is guaranteed to
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BLY87C/01
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BLY92C
Abstract: mfc capacitor philips
Text: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran
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711iOÃ
BLY92C
OT-120.
7Z68949
BLY92C
mfc capacitor philips
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