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    6 PIN TRANSISTOR SMD CODE 21 Search Results

    6 PIN TRANSISTOR SMD CODE 21 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    6 PIN TRANSISTOR SMD CODE 21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF6G10LS-160RN

    Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN

    30RF35

    Abstract: VJ1206Y104KXB smd transistor equivalent table
    Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 — 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1.


    Original     		PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table

    6r3k3c6

    Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPD60R3K3C6 6r3k3c6 transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC114TMB SO T8 NPN resistor-equipped transistor; R1 = 10 k , R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC114TMB DFN1006B-3 OT883B) PDTA114TMB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC114TMB SO T8 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC114TMB DFN1006B-3 OT883B) PDTA114TMB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC115TMB SO T8 NPN resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC115TMB DFN1006B-3 OT883B) PDTA115TMB. AEC-Q101

    2d SMD PNP TRANSISTOR

    Abstract: TRANSISTOR SMD MARKING CODE 2d SMD TRANSISTOR MARKING 2D TRANSISTOR SMD CODE PACKAGE SOT23 501 TRANSISTOR SMD MARKING CODE 41 transistor SMD MARKING CODE L 33 2d SMD npn TRANSISTOR smd TRANSISTOR 2D SOT23 NPN TRANSISTOR SMD MARKING CODE 2d TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA92 PNP high-voltage transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 13 Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES PINNING


    Original     		PDF M3D088 PMBTA92 PMBTA42. PMBTA92 MAM256 2d SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODE 2d SMD TRANSISTOR MARKING 2D TRANSISTOR SMD CODE PACKAGE SOT23 501 TRANSISTOR SMD MARKING CODE 41 transistor SMD MARKING CODE L 33 2d SMD npn TRANSISTOR smd TRANSISTOR 2D SOT23 NPN TRANSISTOR SMD MARKING CODE 2d TRANSISTOR SMD MARKING CODE SP

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC115TMB SO T8 NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC115TMB DFN1006B-3 OT883B) PDTA115TMB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


    Original     		PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    6R280C6

    Abstract: TRANSISTOR SMD MARKING CODE IPB60R280C6 IPW60R280C6 6r280 infineon cool MOSFET dynamic characteristic test IPA60R280C6 IPI60R280C6 IPP60R280C6 SMD TRANSISTOR MARKING code TC
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.0, 2009-09-21 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R280C6, IPB60R280C6


    Original     		PDF IPx60R280C6 IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 6R280C6 TRANSISTOR SMD MARKING CODE IPB60R280C6 IPW60R280C6 6r280 infineon cool MOSFET dynamic characteristic test IPA60R280C6 IPI60R280C6 IPP60R280C6 SMD TRANSISTOR MARKING code TC

    BLF6G10LS-200RN

    Abstract: BLF6G10-200RN RF35 A1118
    Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 A1118

    BLF6G10LS-135RN

    Abstract: 2360D BLF6G10-135RN RF35 1961 30 TRANSISTOR
    Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN BLF6G10LS-135RN 2360D RF35 1961 30 TRANSISTOR

    SLAU265

    Abstract: MSP430Fxx mzp a 100 45 16 SMD transistor code NC CL05B CT2194MST-ND 1003 smd resistor mzp a 100 47 16 6 pin SMD CODE 151 SOT 363 m25p16vmn6p
    Text: REP430F Replicator for MSP430 MCU User’s Manual PM041A01 Rev.0 October-23-2009 Elprotronic Inc. Elprotronic Inc. 16 Crossroads Drive Richmond Hill, Ontario, L4E-5C9 CANADA Web site: E-mail: Fax: Voice: www.elprotronic.com info@elprotronic.com 905-780-2414


    Original     		PDF REP430F MSP430 PM041A01 October-23-2009 OT-533 SN74LVC1T45DRLR SLAU265 MSP430Fxx mzp a 100 45 16 SMD transistor code NC CL05B CT2194MST-ND 1003 smd resistor mzp a 100 47 16 6 pin SMD CODE 151 SOT 363 m25p16vmn6p

    SMD TRANSISTOR MARKING 9b

    Abstract: SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE 42 SMD TRANSISTOR MARKING 9B NPN SMD TRANSISTOR MARKING 76 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT591A PNP BISS transistor Product specification Supersedes data of 1999 May 21 1999 Aug 04 Philips Semiconductors Product specification PNP BISS transistor PMMT591A FEATURES PINNING • High current max. 1 A


    Original     		PDF M3D088 PMMT591A PMMT491A. PMMT591A SMD TRANSISTOR MARKING 9b SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE 42 SMD TRANSISTOR MARKING 9B NPN SMD TRANSISTOR MARKING 76 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE SP

    TRANSISTOR SMD MARKING CODE 9A

    Abstract: smd 551 code marking sot23 SMD transistor MARKING CODE 43 ST 9340 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE SP SMD TRANSISTOR MARKING 93 all transistor data sheet book download MARKING SMD npn TRANSISTOR a1 marking code 33 SMD ic
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT491A NPN BISS transistor Product specification Supersedes data of 1999 May 21 1999 Aug 04 Philips Semiconductors Product specification NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A


    Original     		PDF M3D088 PMMT491A PMMT591A. PMMT491A TRANSISTOR SMD MARKING CODE 9A smd 551 code marking sot23 SMD transistor MARKING CODE 43 ST 9340 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE SP SMD TRANSISTOR MARKING 93 all transistor data sheet book download MARKING SMD npn TRANSISTOR a1 marking code 33 SMD ic

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    PDTA113ZMB

    Abstract: No abstract text available
    Text: 83B PDTA113ZMB SO T8 PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA113ZMB DFN1006B-3 OT883B) PDTC113ZMB. AEC-Q101 PDTA113ZMB

    PDTA113ZMB

    Abstract: No abstract text available
    Text: 83B PDTA113ZMB SO T8 PNP resistor-equipped transistor; R1 = 1 k , R2 = 10 k Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA113ZMB DFN1006B-3 OT883B) PDTC113ZMB. AEC-Q101 PDTA113ZMB

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 k , R2 = 10 k Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC114EMB DFN1006B-3 OT883B) PDTA114EMB. AEC-Q101

    6 pin TRANSISTOR SMD CODE 21

    Abstract: germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of two letters followed by a serial number For example: C Material


    Original     		PDF 21-Oct-03 CNY17F-2X017T 4N35-X016 BRT12H-X009T 6 pin TRANSISTOR SMD CODE 21 germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor

    t8 smd transistor

    Abstract: No abstract text available
    Text: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC114EMB DFN1006B-3 OT883B) PDTA114EMB. AEC-Q101 t8 smd transistor

    L6562D

    Abstract: Electronic ignitors for HID lamp circuits Diac st 083 schematic diagram Electronic Ballast HID circuit diagram electronic choke for tube light schematic hid ballast 35w ELECTRONIC BALLAST 150 W HID DIAGRAM melf ZENER diode COLOR CODE schematic hid lamp ballast schematic hid sodium lamp ballast
    Text: AN2952 Application note 35 W electronic ballast for HID lamps Introduction Low-power metal halide lamps are becoming popular as lighting sources in indoor environments like shopping centers or malls, serving as alternatives to more traditional halogen lamps, thanks to their intrinsic higher efficiency, longer lifetime and optimal color


    Original     		PDF AN2952 Hz-100 z-400 L6562D Electronic ignitors for HID lamp circuits Diac st 083 schematic diagram Electronic Ballast HID circuit diagram electronic choke for tube light schematic hid ballast 35w ELECTRONIC BALLAST 150 W HID DIAGRAM melf ZENER diode COLOR CODE schematic hid lamp ballast schematic hid sodium lamp ballast