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    5V GATE TO SOURCE VOLTAGE SFET Search Results

    5V GATE TO SOURCE VOLTAGE SFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    5V GATE TO SOURCE VOLTAGE SFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN9321 AN-7260
    Text: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/1QA, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power M O SFET Th e se complementary power M O S F E T s are manufactured using an advanced M e g aFET process. Th is process, which u ses feature size s approaching those of L S I integrated


    OCR Scan     		PDF RF3V49092, RF3S49092SM AN7254 AN7260. AN9321 AN-7260

    Untitled

    Abstract: No abstract text available
    Text: HUF76444P3, HUF76444S3S Semiconductor December 1998 Advance Inform ation 60V, 0.010 Ohm, 75A, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power M O SFETs are manufactured using the innova­ File Number 4675 Features Ultra Low On-Resistance, rQS ON = 0.009S2, VGS= 1 0 \/


    OCR Scan     		PDF HUF76444P3, HUF76444S3S 00A/ns

    Untitled

    Abstract: No abstract text available
    Text: HUF76444P3, HUF76444S3S December 1998 Advance Information 60V, 0.010 Ohm, 75A, N-Channel, Logic Level UltraFET Power MOSFETs Features Ultra Low On-Resistance, rQS ON = 0.009£2, VGS= 1 0 l/ r DS(ON) = 0.01 O a V g s = 5 ^ These N-Channel power M O SFETs are manufactured using the innova­


    OCR Scan     		PDF HUF76444P3, HUF76444S3S 00A/HS 00A/ns

    d1106

    Abstract: LD1116 LD 1106
    Text: E> A dvanced L in e a r ALD1106/ALD1116 D e v ic e s , In c . QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The A LD 1106/A LD 1116 are m onolithic quad/dual N-channel enhance­ m entm ode m atched M O SFET transistor arrays intended fo r a broad range


    OCR Scan     		PDF ALD1106/ALD1116 1106/A 106/A 106/ALD1116 d1106 LD1116 LD 1106

    Untitled

    Abstract: No abstract text available
    Text: MIC5010 Full-Featured High- or Low-Side MOSFET Driver General D escription Features The MIC5010 is the full-featured member of the Micrel MIC501X driver family. These ICs are designed to drive the gate of an N-channel power M O SFET above the supply rail in high-side power switch applications. The MIC5010 is


    OCR Scan     		PDF MIC5010 MIC5010 MIC501X

    Untitled

    Abstract: No abstract text available
    Text: MIC5020 Current-Sensing Low-Side MOSFET Driver Preliminary Information General Description Features The M IC5020 low-side M O SFET driver is designed to oper­ ate at frequencies greater than 100kHz and is an ideal choice for high-speed applications such as m otor control, SMPS


    OCR Scan     		PDF MIC5020 IC5020 100kHz MIC5020 IC5020â 175ns 2000pF

    VA22

    Abstract: Li ION spice model charge VA-22 tlsl100 HUF76113DK8 HUF76113DK8T MS-012AA TB334 TB337 ta761
    Text: H U F76113D K 8 in t e r d i Data Sheet O c to b e r 1999 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET # 4 3 8 7 .4 Features • Logic Level Gate Drive This N-Channel power M O SFET is w F ile N u m b e r manufactured using the innovative


    OCR Scan     		PDF HUF76113DK8 43D2571 VA22 Li ION spice model charge VA-22 tlsl100 HUF76113DK8 HUF76113DK8T MS-012AA TB334 TB337 ta761

    Untitled

    Abstract: No abstract text available
    Text: in te r r ii HUF76132SK8 D a ta s h e e t S e p te m b e r 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power M O SFET This N-Channel power M O S F E T is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		PDF HUF76132SK8

    5210s

    Abstract: MOSFET smd marking kl 1ER2 AN-994 IRL510 IRL510S SMD-220 arej
    Text: International ü ë ]Rectifier PD-9.560C IRL510 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRL510 O-220 5210s MOSFET smd marking kl 1ER2 AN-994 IRL510S SMD-220 arej

    Untitled

    Abstract: No abstract text available
    Text: General Description Features The M IC5014/5015 M O SFET predrivers are m em bers of the MIC501x family. These versatile drivers are designed to provide gate enhancem ent above the positive supply for an Nchannel FET used in high or low side switching applications.


    OCR Scan     		PDF IC5014/5015 MIC501x MIC5010 MIC5014/5015 IC5014

    AMPLIFIER wifi

    Abstract: Capacitor 47nS namics UCC1837
    Text: y UCC1837 UCC2837 UCC3837 UNITRODE 8-Pin N-FET Linear Regulator Controller PRELIMINARY FEATURES DESCRIPTIO N • On Board Charge Pump to Drive External N -M O SFET • Input Voltage as Low as 3V • Duty Ratio Mode Over Current Protection • Extremely Low Dropout


    OCR Scan     		PDF UCC1837 UCC2837 UCC3837 CC3837 100ns 200mA AMPLIFIER wifi Capacitor 47nS namics

    BUZ71A

    Abstract: 0120S
    Text: in t e is il BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N -Channel Power M O SFET File Num ber 2419.2 Features • 13A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as • rDS ON ~ 0.120S2


    OCR Scan     		PDF BUZ71A 120S2 TA9770. BUZ71A 0120S

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1 ETC ;A mu MIC5011 Design Techniques n | |g | g * | by Mitchell Lee Introduction Power M OSFETs are often preferred over bipolar tran­ sistors as high current switches. In static switching ap­ plications the M O SFET takes no drive power, where a


    OCR Scan     		PDF MIC5011 IC5011

    gs 1117 ax

    Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
    Text: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance­ m entm ode matched M O SFET transistor arrays intended fo r a broad range


    OCR Scan     		PDF ALD1107/ALD1117 1107/ALD 107/A ALD1106 ALD1106 1107/A ALD1101 LD1102 LD1103) gs 1117 ax 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117

    KEc 161

    Abstract: No abstract text available
    Text: S EM IC O N D U C T O R KMB7D6NP30Q TECHNI CAL DATA N and P-Ch T rench M O SFET G en era l D escrip tion Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems.


    OCR Scan     		PDF KMB7D6NP30Q KEc 161

    Si9959

    Abstract: SI9910 AN90 siliconix
    Text: SA Member S ioflthei cT o nGroupi x AN90-5 emic Low-Voltage Motor Drive Designs Using N-Channel Dual MOSFETs in Surface-Mount Packages Jim H am den Two basic M O SFET configurations are used in low-voltage m otor drives — the n-channel half-bridge and the p- and n-channel com plem entary half-bridge. T he


    OCR Scan     		PDF AN90-5 AN90-4. Si9955DY Si9956DY Si9959 SI9910 AN90 siliconix

    d22a

    Abstract: D-22A KMD4D5P30XA R/Diode d22a
    Text: S EM IC O N D U C T O R KMD4D5P30XA TECHNI CAL DATA P-CH T rench M O SFET G en era l D escrip tion This Trench MOSFET has better characteristics, such as fast switching tim e, low on re sista n c e , low g ate c h arg e and e x c e lle n t a v a la n ch e


    OCR Scan     		PDF KMD4D5P30XA d22a D-22A KMD4D5P30XA R/Diode d22a

    J 115 mosfet

    Abstract: ECG2376 5V GATE TO SOURCE VOLTAGE MOSFET ecg mosfet ECG2986 ECG2984 ECG2981
    Text: Power M O SFETS cont'd EC6 Type ECG2920 ▲ ECG2375 A ECG2376 ▲ ECG2921 ▲ ECG2922 ▲ ECG2923 ▲ ECG2924 ▲ Description and Application Transcon­ ductance gfs gmhos M O S FET, 25 M in N-Ch, Enh ancem ent Hi Speed S w itch Drain to Sou ice Breakdown


    OCR Scan     		PDF ecg2920 to-247 T48-4 ecg2375 ecg2980 to-126n T45-5 ecg2981 J 115 mosfet ECG2376 5V GATE TO SOURCE VOLTAGE MOSFET ecg mosfet ECG2986 ECG2984

    DIODE s4 66A

    Abstract: No abstract text available
    Text: j * 4 A5 S4 S2 0015508 B IT M I N R @*§3 Rectifier HEXFET P ow er M O SFET • • • • • • PD-9.456C IR F P 3 4 0 IN T E R N A T IO N A L R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching


    OCR Scan     		PDF O-247 IRFP340 DIODE s4 66A

    Untitled

    Abstract: No abstract text available
    Text: PD-91849D International IOR Rectifier IRF7233 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -12V RüS on = 0.020Q, Description These P-Channel MOSFETs from International Rectifier


    OCR Scan     		PDF PD-91849D IRF7233

    1X04

    Abstract: TRANSISTOR MOSFET K 1249 IRFI064
    Text: Data Sheet No. PD-9.876 INTERNATIONAL RECTIFIER TOR AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFIQ64 a] N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power M O SFET transistors.


    OCR Scan     		PDF IRFI064 ihfi064d irfi064u O-259 MIL-S-19500 1X04 TRANSISTOR MOSFET K 1249 IRFI064

    OM6413SP3

    Abstract: OM6414SP3 OM6415SP3 OM6416SP3 OM6414
    Text: OM6413SP3 OM6414SP3 OM6415SP3 OM6416SP3 THREE PHASE MOSFET HALF BRIDGE IN A PLASTIC SIP PACKAGE 100V Thru 500V, Up to 6 Amp, Three Phase M O SFET Half Bridge FEATURES • • • • • • Isolated High Density, Low Profile Package 6 M O S F E T s Per Package


    OCR Scan     		PDF OM6413SP3 OM6414SP3 OM6415SP3 OM6416SP3 b7flc3073 OM6414SP3 OM6416SP3 OM6414

    floating-gate

    Abstract: DEB141
    Text: Order this document by EB141/D MOTOROLA SEMICONDUCTOR ENGINEERING BULLETIN EB141 Boost M O SFETs Drive Current in Solid State A C Relay By Kim Gauen Senior Applications Engineer, Discrete Applications Lab Because M O SF E T s are voltage controlled, they're usu­


    OCR Scan     		PDF EB141/D EB141 2S167T floating-gate DEB141

    50n05

    Abstract: LD55A
    Text: OM6ONO6SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW R DS on POW ER M O SFETS IN H ERM ETIC ISO LATED PACKAGE 50V A n d 60V Ultra L o w R DS(0nl Pow er MOS FETs In TO-257 A nd TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages


    OCR Scan     		PDF OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST O-257 O-254 MIL-S-19500, circuitry60N06SA 50n05 LD55A