MB8516
Abstract: MSM2716AS mb8516h C2716 M5L2716K-65 mb8516 fujitsu MCM2716C UPD2716D HM462716G TMS2516
Text: - 12 7 16 7» + y iâiëïcK] m « ï± £ rc TAAC max ns) TCAC max (ns) TOH max (ns) n te TOE mai (ns) TOD max (ns) VDD (V) A m 1 DD/STANDBY (mA) VIL max (V) tti j l / M -h VIH min (V) £ € üfi (I C i max (pF) V O L / 1 VOL max (V/mA) VOH/IVOH min (V/mA)
|
OCR Scan
|
PDF
|
C2716
F2716
HM462
UPD2716D
uPD2716D-2
048X8)
24PIN
Pin24
Pin21
MB8516
MSM2716AS
mb8516h
M5L2716K-65
mb8516 fujitsu
MCM2716C
HM462716G
TMS2516
|
M5L2716K
Abstract: 2716K M5L2716K-65 intel 2716
Text: MITSUBISHI LSIs M5L 2716 K, K-65 1 6 3 8 4 -B IT 2 0 4 8 -W 0 R D BY 8 -B IT ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) These are ultraviolet-light erasable and electrically re programmable 16 3 8 4 -b it (20 4 8 -w o rd by 8-bit) EPROMs.
|
OCR Scan
|
PDF
|
16384-BIT
2048-W0RD
384-bit
2048-word
100s/16384
M5L2716K
450ns
M5L2716K-65
650ns
525mW
M5L2716K
2716K
M5L2716K-65
intel 2716
|
M58725P
Abstract: M58725 M5L2716K 58725
Text: MITSUBISHI LSIs M58725P, -15 1 6 3 8 4 -B IT 2 0 4 8 -W 0 R D B Y 8-BIT STATIC R A M DESCRIPTION This isa fa m ily o f 2048-word by 8-bit static RAMs, fa b ri cated w ith the N-channelsilicon-gate designed fo r simple interfacing. MOS process PIN CONFIGURATION (TOP VIEW)
|
OCR Scan
|
PDF
|
M58725P,
2048-word
M5872E
M58725P
M58725
M5L2716K
58725
|
2716 IC
Abstract: 2716 JL rom 2716 M5L2716K M5L2716K-65 intel 2716 2716 ROM pin diagram of ic 2716 msl 2716 0326S
Text: MITSUBISHI L S Is M5L 2716 K, K-65 1 6 3 8 4 - B IT 2 0 4 8 -W 0 R D B Y 8 -B IT E R A S A B L E AND E L E C T R IC A L L Y R EP R O G R A M M A B LE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) These are u ltra v io le t-lig h t erasable and e lectrically re
|
OCR Scan
|
PDF
|
16384-BIT
2048-W0RD
384-bit
2048-word
100s/16384
M5L2716K
450ns
M5L2716K-65:
650ns
525mW
2716 IC
2716 JL
rom 2716
M5L2716K
M5L2716K-65
intel 2716
2716 ROM
pin diagram of ic 2716
msl 2716
0326S
|
M58725P
Abstract: M5L2716K m5m51 24P4 M5M5117P M5M5117P-15
Text: M ITSU B IS H I L S Is M5M5117P, -15 1 6 3 8 4 -B IT 2 0 4 8 -W 0 R D B Y 8 -B IT CM O S S TA TIC RAM DESCRIPTION The M5M5117P series o f 2048-word by 8-bit asynchronous silicon gate CMOS static RAM operates on a single 5V power supply and is designed fo r easy use in applications
|
OCR Scan
|
PDF
|
M5M5117P,
16384-BIT
2048-W0RD
M5M5117P
2048-word
theM5L2716K
M58725P
24-pin
M5L2716K
m5m51
24P4
M5M5117P-15
|
M5L2732K
Abstract: mk36000
Text: MITSUBISHI LSIs M5M2365-XXXP 6 5 5 3 6 - B IT 81 92-W O R D B Y 8-B IT M ASK-PROGRAM M ABLE ROM DESCRIPTION The Mitsubishi M 5M 2365-XXXP is a 65536-bit mask pro grammable high speed read-only memory. The M 5M 2365-XXXP is fabricated by N-channel p o ly
|
OCR Scan
|
PDF
|
M5M2365-XXXP
2365-XXXP
65536-bit
24-pin
5L2716K
5L2732K
250ns
M5L2732K
mk36000
|
M58725P
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5117FP, -15 16384-BIT 204S-W 0RD B Y S-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5M 5117FP series of 2048-word by 8-bit asynchro nous silicon gate CM OS static RAM operates on a single 5V power supply and is designed for easy use in applications
|
OCR Scan
|
PDF
|
M5M5117FP,
16384-BIT
204S-W
5117FP
2048-word
5L2716K
M58725P
24-pin
5117FP,
|
