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    5C PNP TRANSISTOR Search Results

    5C PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    5C PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC807-40

    Abstract: bc80725 bc807 BC807-25 BC817-25 BC817-40
    Text: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE


    Original     		PDF BC807-25 BC807-40 OT-23 BC817-25 BC817-40 OT-23 BC807-40 bc80725 bc807 BC807-25

    marking 5B

    Abstract: No abstract text available
    Text: BC807 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS


    Original     		PDF BC807 BC807-25 BC807-40 OT-23 BC817 OT-23 marking 5B

    BC807-40

    Abstract: bc807 BC807-25 BC817-25 BC817-40 marking 5C
    Text: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE


    Original     		PDF BC807-25 BC807-40 OT-23 BC817-25 BC817-40 OT-23 BC807-40 bc807 BC807-25 marking 5C

    BC807-40

    Abstract: BC807-40/5C BC807-25 bc807 BC817-25 BC817-40 marking 5C
    Text: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE


    Original     		PDF BC807-25 BC807-40 OT-23 BC817-25 BC817-40 OT-23 BC807-40 BC807-40/5C BC807-25 bc807 marking 5C

    marking A1 TRANSISTOR

    Abstract: 35-e 20v marking 5b BC807-16W BC817W
    Text: BC807-16W, -25W, -40W -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente FEATURES z z z Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W MARKING 16W:5A; 25W:5B; 40W:5C PACKAGE DIMENSIONS


    Original     		PDF BC807-16W, BC817W -500mA, 07-16W 07-25W 07-40W 01-June-2002 100MHz marking A1 TRANSISTOR 35-e 20v marking 5b BC807-16W BC817W

    DTA143

    Abstract: marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor
    Text: DTA1 43 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT TRANSISTORS SOT-23 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 Emitter-Base Voltage V CBO


    Original     		PDF OT-23 Group-16 -100mA -300mA -500mA, -10mA 50MHz DTA143 marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor

    BC807

    Abstract: BC807-40 16 transistor sot23
    Text: BC807-16 BC807-25 BC807-40 SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — Ldeally suited for automatic insertion — epitaxial planar die construction — complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 OT-23 BC817) -500mA, -50mA BC807 BC807-40 16 transistor sot23

    BC807-16

    Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
    Text: BC807-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SOT-23 SURFACE MOUNT TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage


    Original     		PDF BC807-16/-25/40 OT-23 Group-16 BC807-16 BC807-16LT1 BC807-25LT1 BC807-40LT1

    BC807

    Abstract: No abstract text available
    Text: BC807-16W BC807-25W BC807-40W SOT-323 Transistor PNP 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features — — — Ldeally suited for automatic insertion epitaxial planar die construction complementary to BC817W MARKING: 16W:5A; 25W:5B; 40W:5C MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF BC807-16W BC807-25W BC807-40W OT-323 OT-323 BC817W 07-16W 07-25W 07-40W -500mA BC807

    BC807-40

    Abstract: BC807-25-# mark 5B mark 5a
    Text: BC807-16 / BC807-25 / BC807-40 BC807-16 BC807-25 BC807-40 C E SOT-23 B Mark: 5A. / 5B. / 5C. PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings*


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 BC807-40 BC807-25-# mark 5B mark 5a

    BC807-16

    Abstract: BC807-25 BC807-40
    Text: BC807-16 / BC807-25 / BC807-40 BC807-16 BC807-25 BC807-40 C E SOT-23 B Mark: 5A. / 5B. / 5C. PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings*


    Original     		PDF BC807-16 BC807-25 BC807-40 BC807-16 BC807-25 OT-23 BC807-40

    BC807-40

    Abstract: No abstract text available
    Text: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type Marking BC807-25 5B BC807-40 5C s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■


    Original     		PDF BC807-25 BC807-40 OT-23 BC817-25 BC817-40 OT-23 BC807-40

    101F

    Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
    Text: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal


    OCR Scan     		PDF 00QMQ41 ACY23 ACY32 Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1 fl23SbQS 000404b 101F ACY23V ACY32V Q62901-B1

    transistor Bf 979

    Abstract: pnp vhf transistor
    Text: I BSE D • flB35taDS 0GG45Ö4 T ■ SIEG 'T -3 I-/S BF 979 S PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 5C 04584 D - BF 9 7 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 4 1 8 6 7 .


    OCR Scan     		PDF flB35taDS 0GG45 transistor Bf 979 pnp vhf transistor

    transistor bf 979

    Abstract: Q62702-F610 C12B pnp vhf transistor
    Text: ^ I 5SE D • . . flE3SbDS 0GG45fl4 T ■ SIEG PIMP Silicon Planar Transistor BF 979 S SIEMENS AK TI EN GES ELL SCH AF 5C 04584 D - BF 97 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 41867 .


    OCR Scan     		PDF fl235bOS Q62702-F610 25i02 160ansistion transistor bf 979 Q62702-F610 C12B pnp vhf transistor

    X85C

    Abstract: BDX 71 bdx85 3ALF bdx85b BDX86B X85B
    Text: fZ T ^ 7 # S C S -T H O M S O N * ^ ( a & lO T ( g M S B D X 8 5 /8 5 A /8 5 B /8 5 C B D X 8 6 / 8 6 A /8 6 B /8 6 C POWER DARLINGTONS DESCRIPTION The BDX 85, BDX 85A, BDX 85B and BDX 85C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun­


    OCR Scan     		PDF

    2n2219 equivalent

    Abstract: BFY39 2N2219A BSX45 2N2905a equivalent BSY39 N3343 2N1132B SP3725QDB equivalent 2N2219 BSX88
    Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF Max


    OCR Scan     		PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 2n2219 equivalent BFY39 2N2219A BSX45 2N2905a equivalent BSY39 N3343 SP3725QDB equivalent 2N2219 BSX88

    BSy38

    Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


    OCR Scan     		PDF 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 16NPN BSY51 BSy38 Motorola* 2n708 2N1711 MOTOROLA DH3467CD BSY39 SP3725 SP3725QDB tch98

    MARKING ZX SOT-23

    Abstract: BC813 CMSH3-40 smd diode marking 5d SOD-323 2N29C7A BC48b BC337 N Channel Mosfet SOT-23 12W SOT-89 smd marking ol smd diode 5d SOD-323
    Text: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. b v CBO b v c e o b v e b o *BVc £S MIN hpE ICBO VCB e v CE « íc m mm V c e (SAT) 9 lc ^ob »T m *OFF #,CE$ (V) <V) <"A) MIN MIN MAX m MIN General Purpose Amplifier/Switches


    OCR Scan     		PDF OT-23 350mW CMPT8099 CMPT930 CMPT2222A CMPT3904 CMPT4401 CMPT8599 SMPT29 500ns MARKING ZX SOT-23 BC813 CMSH3-40 smd diode marking 5d SOD-323 2N29C7A BC48b BC337 N Channel Mosfet SOT-23 12W SOT-89 smd marking ol smd diode 5d SOD-323

    k 942

    Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
    Text: 2SC ]> • 023SbOS 00040=52 'î H S I E 6 ‘ *7_ / " i/ * / 7 PNP Silicon Planar Transistors 2 N 2904 2 N 2905 - SIEMENS AKTIENGESELLSCHAF -2 N 2904 and 2 N 2905 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		PDF Q62702-F65 Q62702-F66 C-30V 103mA lfE-20 053SbOS -2N2904A k 942 K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65

    2N1711 MOTOROLA

    Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
    Text: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency


    OCR Scan     		PDF SP918AF SP918BF SP2222AF SP2223AF SP2484F SP2907AF SP2946F BSY51 2N2218 BSY52 2N1711 MOTOROLA DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 bsx46 equivalent

    2N2270 equivalent

    Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


    OCR Scan     		PDF 2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/15NPN BSY51 2N2270 equivalent 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76

    equivalent transistor 2N1711

    Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 equivalent transistor 2N1711 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR

    equivalent transistor 2N1711

    Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


    OCR Scan     		PDF 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 equivalent transistor 2N1711 MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708