58V16BD Search Results

Untitled

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 58V16BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 Mbit 2 M x 8 bit CMOS NAND E2PROM (2M BYTE Sm artM edia ) DESCRIPTION The TC 58V16BD C device is a single 3.3 vo lt 16 M (17,301,504) b it N A N D E le c tric a lly Erasab le and