BF569
Abstract: BF569R
Text: BF569/BF569R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3
|
Original
|
PDF
|
BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
|
BF569
Abstract: BF569R
Text: BF569/BF569R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
|
Original
|
PDF
|
BF569/BF569R
BF569
BF569R
D-74025
31-Oct-97
|
BF569
Abstract: BF569R
Text: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH
|
Original
|
PDF
|
BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
|
BF569
Abstract: BF569R
Text: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH
|
Original
|
PDF
|
BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
|
NPN general purpose silicon transistors
Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
Text: Transistors FMC6A IMD1A 94S-830-AC115E (96-458-AC124T) 575 Transistors IMD10A (96-555-IMD10) 582 Transistors IMD16A (96-473-IMD16) 583 Transistors IMD8A IMD9A (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors)
|
Original
|
PDF
|
94S-830-AC115E)
96-458-AC124T)
IMD10A
96-555-IMD10)
IMD16A
96-473-IMD16)
94S-902-AC144T)
94S-904-AC114Y)
2SA1036K
2SC411K
NPN general purpose silicon transistors
Transistors General
UMZ1N
transistor 526
c114e
transistors
C124E
dual npn 500ma
581 PNP
|
2N4338 substitution
Abstract: 2N4237 2N4238 2N4239 C-2688 MIL-PRF19500 2n4234 equivalent
Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 10 December 1999. INCH-POUND MIL-PRF-19500/581A 10 September 1999 SUPERSEDING MIL-S-19500/581 23 April 1990 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,
|
Original
|
PDF
|
MIL-PRF-19500/581A
MIL-S-19500/581
2N4237,
2N4238
2N4239
MIL-PRF-19500.
2N4338 substitution
2N4237
C-2688
MIL-PRF19500
2n4234 equivalent
|
79-3544-15-05
Abstract: M12 4 PIN CIRCULAR PLASTIC CONNECTORS Female PCB connector m12 8 x m12x1 female connector 99-3431-601-04 3539/15 5 pole m12x1 CABEL RATING dose M12 IEEE 693
Text: Serie 763 763 Ü TI 620 702 709 710 711 712 719 423 425 440 581 678 680 682 720 723 623 690 691 Sensor Steckverbinder Serie 763 M12x1 Sensor connectors series 763 (M12x1) Kabelsteckverbinder • Rundsteckverbinder mit Schraubverriegelung (M12x1) • Steckverbinder umspritzt am Kabel
|
Original
|
PDF
|
M12x1)
67/IP
9/M16
79-3544-15-05
M12 4 PIN CIRCULAR PLASTIC CONNECTORS
Female PCB connector m12 8 x
m12x1 female connector
99-3431-601-04
3539/15
5 pole m12x1
CABEL RATING
dose M12
IEEE 693
|
BF579
Abstract: BF579R marking GG
Text: BF579/BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency
|
Original
|
PDF
|
BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
marking GG
|
BF579
Abstract: BF579R marking GG
Text: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion
|
Original
|
PDF
|
BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
marking GG
|
BF579
Abstract: BF579R marking GG
Text: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion
|
Original
|
PDF
|
BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
marking GG
|
BF579
Abstract: BF579R
Text: BF579/BF579R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 1
|
Original
|
PDF
|
BF579/BF579R
BF579
BF579R
D-74025
31-Oct-97
|
ic 7490 pin diagram
Abstract: mh 7490 TTL 7490 MHz frequency counter MECL System Design Handbook ic 7490 truth table mc1004p MC4051 MC8601 motorola Motorola AN-581
Text: AN-581 Application Note AN MSI 500 MHz FREQUENCY COUNTER USING MECL AND MTTL Prepared By Jon M . DeLaune Application Engineering The design of a MSI 8-digit LED read out 5 0 0 M H z counter using M E C L III , M E C L 10,000 and T T L is discussed. De
|
OCR Scan
|
PDF
|
AN-581
LED-10A
CL4317
ic 7490 pin diagram
mh 7490
TTL 7490
MHz frequency counter
MECL System Design Handbook
ic 7490 truth table
mc1004p
MC4051
MC8601 motorola
Motorola AN-581
|
AD308
Abstract: AD5811 AD581 AD581J AD581K AD581L AD581S AD581T AD581U Limiter PIN diode ADS model
Text: ANALOG DEVICES High Precision 10 Volt 1C Reference FEATURES Laser-Trimmed to High Accuracy: 10.000 Volts ± 5 m V L and U Trimmed Temperature Coefficient: 5ppm/°C max, 0 to +7Cl°C (L) 10ppnn/°C max, -55°C to +125°C (U) Excellent Long-Term Stability:
|
OCR Scan
|
PDF
|
10ppnn/Â
25ppr
AD581
100S2
100Si.
12-Bit
AD308
AD5811
AD581J
AD581K
AD581L
AD581S
AD581T
AD581U
Limiter PIN diode ADS model
|
MPS2907
Abstract: MPS2907A PN2907A
Text: SAM S UN G SEMICONDUCTOR INC IME D MPS2907A | 7U4142 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISITOR • Collector-Emitter Voltage: Vceo = 60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracteristic
|
OCR Scan
|
PDF
|
cil14m2
MPS2907A
625mW
MPS2907
T-29-21
150mA,
500mA,
PN2907A
|
|
|
BF 145 transistor
Abstract: transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor
Text: E5E D • fl235bOS aoaMSaa 1 ■ SIEG ■ PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 968 D - fo r in p u t stages up to 9 0 0 M H z BF 9 6 8 is a PNP silicon UHF planar transistor w ith passivated surface in a low-capacitance
|
OCR Scan
|
PDF
|
T0119
Q62702-F612
BF 145 transistor
transistor bf 968
transistor bf 600
BF968
Q62702-F612
BF 500 transistor
|
D70F2T1
Abstract: D71F2T1
Text: SURFACE-MOUNT PNP POWER TRANSISTORS D71F2T1 -50 VOLTS -2 AMP, 500mWATTS Designed for power amplifier applications, power switching applications. Features: • Low saturation voltage : V C E s a t = -0.5V (Max.) (IC • High speed switching time: = -1A) = 1.0jus (Typ.)
|
OCR Scan
|
PDF
|
D71F2T1
500mWATTS
D70F2T1
OT-89
250mm2
-LU11
D70F2T1
D71F2T1
|
MPS2907A EQUIVALENT
Abstract: No abstract text available
Text: SAM SU NG SEMI CON DUCTOR INC IME D MPS2907A | T^IMS 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRA N SISTO R • Collector-Emltter Voltage: V « o = 6 0 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
|
OCR Scan
|
PDF
|
MPS2907A
T-29-21
PS2907
MPS2907A EQUIVALENT
|
KTN2369AU
Abstract: KTN2369U KTN2907AU KTN2907U
Text: SEMICONDUCTOR TECHNICAL DATA KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, Veb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.
|
OCR Scan
|
PDF
|
KTN2907U/AU
-50nA
-150mA,
-15mA.
KTN2222U/2222AU.
KTN2907U
KTN2907AU
KTN2369AU
KTN2369U
KTN2907AU
|
ad308
Abstract: ADS81J AD581 ADS81 AD7570 AD581J AD581K AD581L AD581S AD581T
Text: ANALOG DEVICES □ High Precision 10 Volt IC Reference FEATURES Laser-Trimmed to High Accuracy: 10.000 Volts ±5m V L and U Trimmed Temperature Coefficient: 5ppm /°C max, 0 to +70°C (L) 10ppm/°C max, -55°C to +125°C (U) Excellent Long-Term S tability:
|
OCR Scan
|
PDF
|
10ppm/Â
25ppm/1000
AD581
AD7570
10-Bit
12-Bit
ad308
ADS81J
ADS81
AD7570
AD581J
AD581K
AD581L
AD581S
AD581T
|
BFP96
Abstract: BFQ32C
Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X
|
OCR Scan
|
PDF
|
BFP96.
BFQ32C
BFP96
BFQ32C
|
transistor 45 f 122
Abstract: BFQ32C SOT173 GHz PNP transistor BFP96
Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X
|
OCR Scan
|
PDF
|
BFQ32C
OT173
OT173X
BFP96.
711002b
OT173.
D0M542fl
transistor 45 f 122
BFQ32C
SOT173
GHz PNP transistor
BFP96
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors k b S 3 T 3 1 Q 031535 530 • A P X ^Pfoductspecification PNP 4 GHz wideband transistor BFQ32C N AUER PHILIPS/DISCRETE DESCRIPTION blE » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes. It is
|
OCR Scan
|
PDF
|
BFQ32C
OT173
BFP96.
|
BFQ32C
Abstract: SOT173 philips 586 BFP96 wideband transistor sot173 SOT-173 MICROWAVE TRANSISTOR philips 586
Text: Philips Semiconductors ^^53^31 Q D 31535 S3G A P X ^^Productspecification PNP 4 GHz wideband transistor BFQ32C N A PIER P H I L I P S / D I S C R E T E DESCRIPTION b^E » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes. It is
|
OCR Scan
|
PDF
|
QD31535
BFQ32C
OT173
OT173X
BFP96.
M0CS60
OT173ovember
0D3153
BFQ32C
bbS3131
SOT173
philips 586
BFP96
wideband transistor sot173
SOT-173
MICROWAVE TRANSISTOR philips 586
|
BDT65
Abstract: IOM10 BDT64 BDT64A BDT64B BDT64C BDT65B TRANSISTORE MSA-06
Text: J BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. PNP complements are BDT64; BDT64A; BDT64B and BDT64C.
|
OCR Scan
|
PDF
|
BDT65;
BDT65B;
O-220
BDT64;
BDT64A;
BDT64B
BDT64C.
BDT65
T0-220.
7z82329
IOM10
BDT64
BDT64A
BDT64C
BDT65B
TRANSISTORE
MSA-06
|
