BY267
Abstract: 28F0165V 2dcc 28F016SA M28F008 MS28F016SV VE28F008 VS28F016SV
Text: VS28F016SV MS28F016SV 16-Mbit 1-Mbit x 16 2-Mbit x 8 FlashFile TM MEMORY Y Y VS28F016SV b 40 C to a 125 C SE2 Grade MS28F016SV b 55 C to a 125 C QML Certified SE1 Grade Y SmartVoltage Technology User-Selectable 3 3V or 5V VCC User-Selectable 5V or 12V VPP
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VS28F016SV
MS28F016SV
16-Mbit
VS28F016SV
VE28F008
M28F008
256-Byte
VE28F008
M28F008
28F016SA
BY267
28F0165V
2dcc
MS28F016SV
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MS28F016SV
Abstract: 28F016SA M28F008 VE28F008 VS28F016SV Verilog Block Error Code 15-word block of 8-bit d MS28F016SV100
Text: VS28F016SV MS28F016SV 16-Mbit 1-Mbit x 16 2-Mbit x 8 FlashFile TM MEMORY Y Y VS28F016SV b 40 C to a 125 C QML Certified SE2 Grade MS28F016SV b 55 C to a 125 C QML Certified SE1 Grade Y SmartVoltage Technology User-Selectable 3 3V or 5V VCC User-Selectable 5V or 12V VPP
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VS28F016SV
MS28F016SV
16-Mbit
VS28F016SV
VE28F008
M28F008
256-Byte
VE28F008
M28F008
56-Lead
MS28F016SV
28F016SA
Verilog Block Error Code 15-word block of 8-bit d
MS28F016SV100
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Untitled
Abstract: No abstract text available
Text: SHARP J a n .1998 FLASH MEMORYÌ LH28F016SANS-70 Ver.1.1 V_ J SHARP CORPORATION Flash Memory Engineering Department 2 Memory Engineering Center Tenri Integrated C irc u its Development 1C Group SHARP L HF 1 6 S Z B 1 LH28F016SANS-70 16 Mbit (1 Mbit x 16, 2 Mbit x 8)
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LH28F016SANS-70
LH28F016SANS-70
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MS28F016SV85
Abstract: 297372 2BF016SV-085 56LSSOP
Text: ABW AKKSB fl!M[P ffi MA70@ Kl VS28F016SV, MS28F016SV 16-Mbit (1-Mbit x 16, 2-Mbit x 8 FlashFile MEMORY • Configurable x8 or x16 Operation _ 56-Lead SSOP Plastic Package ■ VS28F016SV 40°C to + 125°C — QML Certified — SE2 Grade ■ Backwards-Compatible with VE28F008
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VS28F016SV,
MS28F016SV
16-Mbit
VS28F016SV
VS/MS28F016SV,
16-Mbit
01bT754
MS28F016SV85
297372
2BF016SV-085
56LSSOP
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MS28F016SV85
Abstract: No abstract text available
Text: in te i VS28F016SV, MS28F016SV 16-Mbit 1-Mbit x 16, 2-Mbit x 8 FlashFile MEMORY VS28F016SV 40°C to + 125°C — QML Certified — SE2 Grade MS28F016SV 55°C to +125°C — QML Certified — SE1 Grade Smart Voltage Technology — User-Selectable 3.3V or 5V Vcc
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OCR Scan
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VS28F016SV,
MS28F016SV
16-Mbit
VS28F016SV
56-Lead
VE28F008
M28F008
VE28F008,
MS28F016SV85
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Untitled
Abstract: No abstract text available
Text: June 1997 FLASH MEMORY LH28F016SANS-70 Ver. 1.0 SHARP CORPORATION Engineering Department 2 Rash Memory Development Center Tenri Integrated Circuits 1C Group 1 LH28F016SANS-70 16 Mbit (1 Mbit x 16, 2 Mbit x 8) Flash Memory CONTENTS FEATURES PAGE . 2
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LH28F016SANS-70
LH28Fxxx
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297372
Abstract: intel 27123 271305
Text: AQWADÜK&B ONPOOSDSlAirDOM VS28F016SV, MS28F016SV FlashFile MEMORY • VS28F016SV 40°C to + 125°C — SE2 Grade ■ Configurable x8 or x16 Operation 56-Lead, 0.8mm x 13.5mm SSOP Plastic Package ■ MS28F016SV 55°C to +125°C — QML Certified — SEI Grade
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OCR Scan
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VS28F016SV,
MS28F016SV
VS28F016SV
VS/MS28F016SV,
16-Mbit
28F016SV
28F016SA
297372
intel 27123
271305
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Untitled
Abstract: No abstract text available
Text: l y in te i « ? 28F016SA 16 MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFile MEMORY User-Selectable 3.3V or 5V V qc User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 « M B /sec Burst W rite Transfer Rate Revolutionary Architecture — Pipelined Command Execution
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OCR Scan
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28F016SA
28F008SA
56-Lead,
28F016SA
16-Mbit
56-Lead
2L175
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