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    561-14 TRANSISTOR Search Results

    561-14 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    561-14 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8060 transistor

    Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
    Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,


    Original     		PDF 8060-1G11 8060-1G6 MIL-S-83502/2 MIL-S-83502/5. 8060 transistor 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45

    UVQ-48/2.5-D48

    Abstract: rtd 2025 106c tantalum capacitors 7D24
    Text: UVQ Series Low-Profile, Isolated Quarter-Brick 2.5-40 Amp DC/DC Converters ORDERING GUIDE SUMMARY Model ➀ VOUT Range ➀ All Models 1.2V to 48V IOUT Range ➀ VIN Range Efficiency 2.5A to 40A 18-36V or 36-75V Up to 94%, model dependent INPUT CHARACTERISTICS


    Original     		PDF 8-36V 6-75V DS-0549 UVQ-48/2.5-D48 rtd 2025 106c tantalum capacitors 7D24

    759 power op amp

    Abstract: KOTA MICROCIRCUITS Output amplification 100MHZ C561 GKX20000 KH560 KH563AI S11561 572A1
    Text: A m p l i fy t h e H u m a n E x p e r i e n c e www.cadeka.com KH563 Wideband, Low Distortion Driver Amplifier Features • ■ ■ ■ ■ General Description 150MHz bandwidth at +24dBm output Low distortion 2nd/3rd: -59/-62dBc @ 20MHz and 10dBm Output short circuit protection


    Original     		PDF KH563 150MHz 24dBm -59/-62dBc 20MHz 10dBm) 250mA, KH563 759 power op amp KOTA MICROCIRCUITS Output amplification 100MHZ C561 GKX20000 KH560 KH563AI S11561 572A1

    14d 431K varistor

    Abstract: 10d 431K Varistor 20d 391K varistor 10d 471k 14D 391K 14D 471K 14d 151K varistor 07d 391k VARISTOR MVR 14d 390k
    Text: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V


    Original     		PDF UL1414 E197475 UL1449 E326004 14d 431K varistor 10d 431K Varistor 20d 391K varistor 10d 471k 14D 391K 14D 471K 14d 151K varistor 07d 391k VARISTOR MVR 14d 390k

    20d 391K varistor

    Abstract: varistor 10d 391k 100 471K varistor 14D 561K 14D 471K 14D 821K varistor 14d varistor 391k
    Text: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V


    Original     		PDF UL1414 E197475 UL1449 E326004 20d 391K varistor varistor 10d 391k 100 471K varistor 14D 561K 14D 471K 14D 821K varistor 14d varistor 391k

    S-AU80

    Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


    Original     		PDF 10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AU80 TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic

    14d 431K varistor

    Abstract: 14D 391K 20d 391K varistor 10d 471k 14D 471K 13007D 14D 561K 10d 431K Varistor VARISTOR MVR 431K20D
    Text: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V


    Original     		PDF UL1414 E197475 UL1449 E326004 14d 431K varistor 14D 391K 20d 391K varistor 10d 471k 14D 471K 13007D 14D 561K 10d 431K Varistor VARISTOR MVR 431K20D

    S-AV17

    Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


    Original     		PDF 10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AV17 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


    Original     		PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N1131 2N1132 2N718A 2N1613 MIL-S-19500 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN

    znr 14 k 201 varistor

    Abstract: znr 14 k 221 varistor znr 10 k 621 varistor znr k 821 varistor znr k 201 varistor znr 14 k 361 varistor znr 20 k 391 varistor thyristor CSG2001-14A04 Znr 14 k 391 znr k 391 varistor
    Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.


    Original     		PDF

    znr 14 k 361 varistor

    Abstract: znr 14 k 221 varistor thyristor CSG2001-14A04 znr k 391 varistor znr 14 k 201 varistor znr 14 k 330 varistor znr k 201 varistor znr3 ZNR 471
    Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.


    Original     		PDF

    Varistor 7D 471K

    Abstract: 14d 431K varistor transistor TPV 3100 14d 151K varistor 10d 471k 431K20D 7d 241k 14n 221k VARISTOR MVR 14D 391K
    Text: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V


    Original     		PDF UL1449 E222955 UL1414 E197475 E326004 40D/R 34S/R Varistor 7D 471K 14d 431K varistor transistor TPV 3100 14d 151K varistor 10d 471k 431K20D 7d 241k 14n 221k VARISTOR MVR 14D 391K

    thyristor CSG2001-14A04

    Abstract: No abstract text available
    Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.


    Original     		PDF ERZE05Fâ ERZE07Fâ ERZE08Fâ ERZE10Fâ ERZE11Fâ thyristor CSG2001-14A04

    BFN 15

    Abstract: KTY13A SOT R25 16N250 KTY13C BF sot-89 CQV234 KTY13D CQV232 KTY13B
    Text: High-voltage transistors Type PNP = P NPN = N Maximum ratings h mA K ;eo V Characteristics ramb = 25 °C Pto. mW ^ FE — K* V h mA V MHz Package outlines Pin configu­ Type ration No. ^ CEsat h BF 622 BFN 16 BFN 18 BFN 20 BFN 22 BFN 24 BFN 26 N N N N N


    OCR Scan     		PDF KTY13A KTY13B KTY13C KTY13D BFN 15 SOT R25 16N250 BF sot-89 CQV234 CQV232

    transistor 373

    Abstract: 8060 transistor
    Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe


    OCR Scan     		PDF 8060-1G11 8060-1G6 MIL-S-83502/2 M1L-S-83502/5. transistor 373 8060 transistor

    diode SY 192

    Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
    Text: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«


    OCR Scan     		PDF

    transistor NEC D 882 p

    Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5012 2SC5012-T1 2SC5012-T2 transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking

    2SC5012-T1

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


    OCR Scan     		PDF 2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1

    10M1TR

    Abstract: DTC143TKA
    Text: DTC143TE DTC143TUA DTC143TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC143TE (EMT3) package marking: DTC143TE, DTC143TUA, and DTC143TKA; 03 0 .7 + QJ


    OCR Scan     		PDF DTC143TE DTC143TUA DTC143TKA SC-70) SC-59) DTC143TE, DTC143TUA, DTC143TKA; DTC143TE 10M1TR DTC143TKA

    UEI 20 SP 010

    Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
    Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"


    OCR Scan     		PDF 64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D

    MSD 7818

    Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
    Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1


    OCR Scan     		PDF 6250b MSD 7818 MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN

    UTC 1316

    Abstract: AVANTEK utc 561 db opera 215 20247 rf transistor Avantek* UTC 1p2 transistor 11-903 AVANTEK utc UTC 1316 amplifier Avantek amplifier UTC
    Text: AVANTEK INC m H4E ] UM nhh 0QQÔ0S1 T BIAVA UTO/UTC 561 Series Thin-FIlm Cascadable Amplifier 10 to 500 MHz FEATURES APPLICATIONS . = • Frequency Range; 10 to 500 MHz • High Output Power: . +27 dBm Typ) • Temperature Compensated • IF/RF Amplification


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: • ^53*131 0023^51 2^3 H A P X N AMER PHILIPS/DISCRETE BST78 b7E D J V HIGH-VOLTAGE N-CHANNEL VERTICAL D-MOS TRANSISTOR High-voltage N-channel vertical D-MOS transistor in plastic TO-126 envelope and intended fo r use in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST78 O-126 bbS3T31

    ha 1452 Amplifiers

    Abstract: 702 sot 23 100Z3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz ;• .6 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 3.0 dB TYP at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 OT-23) ha 1452 Amplifiers 702 sot 23 100Z3