Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    56 DIODE 1N Search Results

    56 DIODE 1N Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    56 DIODE 1N Price and Stock

    Hirschmann Electronics GmbH & Co Kg G 4 W 1 F 1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics G 4 W 1 F 1N4004 DIODE ME 3
    • 1 $9.63
    • 10 $8.38
    • 100 $6.91
    • 1000 $5.74
    • 10000 $5.74
    		Buy Now

    Hirschmann Electronics GmbH & Co Kg GM 209 NJ W/1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GM 209 NJ W/1N4004 DIODE ME
    • 1 $8.28
    • 10 $7.2
    • 100 $5.94
    • 1000 $4.93
    • 10000 $4.93
    		Get Quote

    Hirschmann Electronics GmbH & Co Kg GDM 2009 J W/1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 2009 J W/1N4004 DIODE ME
    • 1 $8.45
    • 10 $7.4
    • 100 $5.99
    • 1000 $4.93
    • 10000 $4.93
    		Get Quote

    56 DIODE 1N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4728A

    Abstract: 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4736A 5.6 volts zener diode specifications
    Text: RECTRON 1N4728A1N4758A SEMICONDUCTOR TECHNICAL SPECIFICATION SILICON PLANAR ZENER DIODE FEATURES * Zener Voltage Range 3.3 to 56 Volts * DO-41 Package JEDEC * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction


    Original     		PDF 1N4728A1N4758A DO-41 DO-41 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4736A 5.6 volts zener diode specifications

    Untitled

    Abstract: No abstract text available
    Text: 1N4728A1N4758A SEMICONDUCTOR TECHNICAL SPECIFICATION SILICON PLANAR ZENER DIODE FEATURES * Zener Voltage Range 3.3 to 56 Volts * DO-41 Package JEDEC * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction * All external surfaces are corrosion resistant and leads


    Original     		PDF 1N4728A1N4758A DO-41 DO-41

    TSSO8 Package

    Abstract: atmel 906 Atmel 652
    Text: Features • No External Components Except PIN Diode • Supply-voltage Range: 2.7 V to 3.6 V • Available for Carrier Frequencies in the Range of 30 kHz to 56 kHz; • • • • • • • Adjusted by Zener-diode Fusing Enhanced Bandpass Filter Accuracy of ±1.25%


    Original     		PDF T2527 T2527 TSSO8 Package atmel 906 Atmel 652

    atmel 906

    Abstract: Atmel 652 T2527 IN783 4600B
    Text: Features • No External Components Except PIN Diode • Supply-voltage Range: 2.7 V to 3.6 V • Available for Carrier Frequencies in the Range of 30 kHz to 56 kHz; • • • • • • • Adjusted by Zener-diode Fusing Enhanced Bandpass Filter Accuracy of ±1.25%


    Original     		PDF T2527 T2527 4600B atmel 906 Atmel 652 IN783

    MR854 diode

    Abstract: 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854
    Text: MOTOROLA Order this document by BUT33/D SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS


    Original     		PDF BUT33/D* BUT33/D MR854 diode 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854

    MJ2955 replacement

    Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power


    Original     		PDF BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P

    zener zp 278

    Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
    Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20


    Original     		PDF 500mW DODO-35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B zener zp 278 Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b

    Untitled

    Abstract: No abstract text available
    Text: Comchip Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G N5 Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Silicon planar power Zener diode. -The Zener voltages are graded according to the international E24 standard, smaller voltage


    Original     		PDF 1N5221B-G 1N5267B-G DO-35 012ounce, 33gram -2X10 -4X10 10X10 QW-BZ001

    ZENER DIODE marking l2

    Abstract: zener voltage for diode 1N5231B smd diode marking code g SMD ZENER DIODE MARKING CODE G SMD zener marking code 102 SILICON PLANAR zener diode DO-35 1N5222B SMD diode Zener diode smd marking code 24 1N5239B SMD 1N5227B
    Text: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.


    Original     		PDF 1N5221B-G 1N5267B-G -500mW DO-35 DO-35 MIL-STD-750 13gram QW-BZ001 1N5221-G ZENER DIODE marking l2 zener voltage for diode 1N5231B smd diode marking code g SMD ZENER DIODE MARKING CODE G SMD zener marking code 102 SILICON PLANAR zener diode DO-35 1N5222B SMD diode Zener diode smd marking code 24 1N5239B SMD 1N5227B

    1N50xx

    Abstract: SMD zener marking code 102
    Text: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.


    Original     		PDF 1N5221B-G 1N5267B-G DO-35 -500mW MIL-STD-750 13gram QW-BZ001 1N5221-G 1N50xx SMD zener marking code 102

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP 500mw Epitaxial Zener Diode SMD DIODE SPECIALIST 1N5221B thru 1N5267B Nominal Zener Voltage: 2.4 to 75V Power Dissipation: 0.5W DO-35 Glass Features - 500mW Power Dissipation 2.4V - 75V Nominal Zener Voltage Low Noise Surface Mount Equivalents Available


    Original     		PDF 500mw 1N5221B 1N5267B DO-35 DO-35, MIL-STD-202, MDS0312004A

    1N4732A

    Abstract: Diode 1N4730A 1N4728A 1N4729A 1N4730A 1N4731A 1N4733A 1N4761A 500C 1N4748A
    Text: 1N4728A~1N4761A Zener diode Voltage Range 3.3 to 75 Volts DO-41 Features 1.High reliability 2.Very sharp reverse characteristic 3.Low reverse current level 4.Vz-tolerance*5% 1.0 25.4 MIN. .107(2.7) .080(2.0) DIA. Applications Voltage stabilization .205(5.2)


    Original     		PDF 1N4728A 1N4761A DO-41 1N4732A Diode 1N4730A 1N4729A 1N4730A 1N4731A 1N4733A 1N4761A 500C 1N4748A

    1N4728A

    Abstract: 1N4742A JEDEC Diode 1N4730A Diode 1n4733a 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A
    Text: 1N4728A~1N4761A FORMOSA MS Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Low reverse current level 4. VZ -tolerance± 5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25? Parameter Test Conditions Type Symbol


    Original     		PDF 1N4728A 1N4761A 1N4742A JEDEC Diode 1N4730A Diode 1n4733a 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog PIT 4-DIO 1N 5408/L-R Order No.: 3212112 Component terminal block, Connection type: Leg spring connection, Cross section: 0.2 mm² - 6 mm², AWG: 24 - 10, Nominal current: 1.5


    Original     		PDF 5408/L-R CL1-2011) 5408/L-R

    1n4044 Rectifier Diode

    Abstract: Diode 1N40 1N40 diodes in404 pic 817 1N3735 1N4044 1N4046 1N4047 1N4049
    Text: Silicon I 1N4044-56.R RECTIFIERS - The A 190 1N 3735 Series is G eneral E lectric’s highly reliable, all-diffused Pic Pac 250 am pere silicon rectifier diode. T h e proven benefits o f G . E . ’s high current rectifier d io d e s are: •


    OCR Scan     		PDF 1N4044-56 1N3735) 1N4044 1N4045 1N4046 1N4047 1N4048 1N4049 1N4050 1N4051 1n4044 Rectifier Diode Diode 1N40 1N40 diodes in404 pic 817 1N3735

    tektronix 475

    Abstract: motorola bipolar transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33 Designer’s Data Sheet 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors w ith B ase-E m itter Speedup Diode The BUT33 Darlington transistor is designed for high-voltage, high-speed, power


    OCR Scan     		PDF BUT33 BUT33 tektronix 475 motorola bipolar transistor

    SMD diode C5C

    Abstract: n4148 smd code marking LF sot23 1N4148 SOD-80 diode 1n4148 smd diode 1n SMD diode SMD diode CA6 diode a 4 w Diode N4148
    Text: SMD Switching Diodes TY P E NO. CA S E D E S C R IP TIO N V ram VOLTS MAX •o <mA) BAS28 SOT-143 DUAL S W ITC H IN G DIODE, ISO LATED 85 B AS 56 C LL914 SO T-143 DUA L HIG H C U R R E N T DIO DE, ISOLATED S O D -8O L E A D L E S S SW ITC H IN G DIODE C L L2003


    OCR Scan     		PDF BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A SMD diode C5C n4148 smd code marking LF sot23 1N4148 SOD-80 diode 1n4148 smd diode 1n SMD diode SMD diode CA6 diode a 4 w Diode N4148

    LN543GK

    Abstract: LN543RA power supply iso-400 LN543GA LN543GKN8 power supply iso-400 4 panasonic packing label
    Text: m: s o n » 97tÊ07Æ02B18$56# S*:P1C/KMKC » s # R:463 JV /,# P. 23 rc <•:. D E V E L O P M E N T L N G 9 T / L Y P î / E L S P E C 9 I F I C A T I O N 5 P F B W k tfc : Blue Light E a i t t i n g Diode MATERIAL GaN APPLICATION In dicators O U T L I N E


    OCR Scan     		PDF 97OT02B18M LNG99SPFBW LN543RAN8 LN643HKN8 LN543GANB LN543GKN8 LN543GK LN543RA power supply iso-400 LN543GA power supply iso-400 4 panasonic packing label

    1N5450A

    Abstract: No abstract text available
    Text: SILICON EPICAP DIODES 1N5441A, B . . . epitaxial passivated abrupt junction tuning diodes designed for elec­ tronic tuning, FM, AFC and harmonic-generation applications in AM through UHF ranges, providing solid-state reliability to replace mechanical tuning


    OCR Scan     		PDF 1N5441A, 1N5456A, DO-204AA) 1NS456A, 1N5450A

    irfip240

    Abstract: DIODE PN junction diode
    Text: • 4aS54SE Q01S3D" ^ " 1NR PD‘9744 IRFIP240 International [^1 Rectifier HEXFET« Power MOSFET • • • • • • • INTERNATIONAL RECTIFIER Isolated Package DC Package Isolation^ 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm


    OCR Scan     		PDF Q01S3D4 IRFIP240 O-247 DIODE PN junction diode

    zener 245

    Abstract: 245 zener 10 watt zener diode ZENER DIODE 1N2976B diode Lz zener LN298 50 Watt Zener Diode 1N2828B 1N2990B 1N2991B
    Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 Maximum Zener Current Test Current lz Zener Impedance Zz Volts mA 1N2990B 1N2991B 1N2992B 1N2993B 1N2994B 33 36 39 43 45 75 70 65 60 55 Ohms


    OCR Scan     		PDF 1N3993A 1N3994A 1N3995A 1N3996A 1N3997A 1N2990B 1N2991B 1N2992B 1N2993B 1N2994B zener 245 245 zener 10 watt zener diode ZENER DIODE 1N2976B diode Lz zener LN298 50 Watt Zener Diode 1N2828B

    Untitled

    Abstract: No abstract text available
    Text: 1N950 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N956B VOLTAGE VARIABLE CAPACITORS General Purpose Applications ELECTRICAL CHARACTERISTICS i CHARACTERISTICS - 1 at Ta = 25 °C unless otherwise specified TEST CONDITIONS Min. Typ. Max.


    OCR Scan     		PDF 1N950 1N956B 10Vdc TD0D37fl 0000SSE

    1N3627

    Abstract: IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G
    Text: TE L •DYNE COMPONENTS EâE D f i T1 7b a e T -o 7 - J QQQbL.47 1 GENERAL P U R P O SE 1N950-956 S IL IC O N E P IT A X IA L V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S V20G-100G GEOMETRY 415 • ALL EPITAXIAL CONSTRUCTION (P + N N +


    OCR Scan     		PDF fiT17bà 1N950-956 V20G-100G V20G-100G 1N3627 IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G

    1N957B

    Abstract: 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N992B
    Text: 1N957B THRU 1N992B Centro! semiconrtiih" c - central semiconductor Corp. 500 mW ZENER DIODE 6.8 VOLTS to 200 VOLTS 5% TOLERANCE ♦I JEDEC DO-35* CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The Central Sem iconductor 1N957B Series Silicon Zener Diode is a high quality voltage regulator for use in


    OCR Scan     		PDF 1N957B 1N992B DO-35* 1N979B 1N980B 1N981B 1N982B 1N983B 1N984B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N992B