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    Semtech Corporation ECLAMP2455K.TCT

    FILTER RC(PI) ESD SMD
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    DigiKey ECLAMP2455K.TCT Digi-Reel 7,210 1
    • 1 $1.09
    • 10 $0.8
    • 100 $0.6908
    • 1000 $0.5454
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    ECLAMP2455K.TCT Cut Tape 7,210 1
    • 1 $1.09
    • 10 $0.8
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    ECLAMP2455K.TCT Reel 3,000 3,000
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    Newark ECLAMP2455K.TCT Reel 3,000 3,000
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    Rochester Electronics ECLAMP2455K.TCT 19,500 1
    • 1 $0.5
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    Richardson RFPD ECLAMP2455K.TCT 1
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    Avnet Asia ECLAMP2455K.TCT 14 Weeks, 6 Days 3,000
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    Avnet Silica ECLAMP2455K.TCT 15 Weeks 3,000
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    New Advantage Corporation ECLAMP2455K.TCT 6,000 1
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    Symmetry Electronics ECLAMP2455K.TCT 1
    • 1 $0.486
    • 10 $0.468
    • 100 $0.4392
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    Songtian Electronics (STE) X2Q2155KT1B0265220125ES0

    X2 305VAC 1.5UF 10% P=22.5MM W26
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    DigiKey X2Q2155KT1B0265220125ES0 Bag 1,000 1
    • 1 $3.65
    • 10 $2.418
    • 100 $1.7622
    • 1000 $1.41255
    • 10000 $1.27015
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    Songtian Electronics (STE) X2P2155KT1B0265200110ES0

    X2 275VAC 1.5UF 10% P=22.5MM W26
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    DigiKey X2P2155KT1B0265200110ES0 Bag 995 1
    • 1 $2.63
    • 10 $1.711
    • 100 $2.63
    • 1000 $0.96264
    • 10000 $0.85672
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    TAIYO YUDEN MSASH45MSB7155KTNA01

    CAP CER 1.5UF 100V X7R 1812
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    DigiKey MSASH45MSB7155KTNA01 Cut Tape 500 1
    • 1 $1.24
    • 10 $0.927
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    MSASH45MSB7155KTNA01 Digi-Reel 500 1
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    MSASH45MSB7155KTNA01 Reel 500 500
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    Avnet Abacus MSASH45MSB7155KTNA01 Reel 17 Weeks 500
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    Nichicon Corporation QXK2G155KTP

    CAP FILM 1.5UF 10% 400VDC RADIAL
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    DigiKey QXK2G155KTP Bulk 152 1
    • 1 $2.96
    • 10 $1.94
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    • 1000 $1.10683
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    Newark QXK2G155KTP Bulk 200
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    Avnet Abacus QXK2G155KTP 28 Weeks 600
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    55KT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    j130 fet

    Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification
    Text: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


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    PDF 0405SC-1000M 0405SC-1000M 1000Watts, j130 fet 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification

    1000uf electrolytic capacitor

    Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
    Text: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


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    PDF 0405SC-1000M 0405SC-1000M 1000Watts, 1000uf electrolytic capacitor capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet

    static induction transistor SIT

    Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR
    Text: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


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    PDF 0405SC-1000M 0405SC-1000M 1000Watts, static induction transistor SIT "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor "Static Induction Transistor" x2404 1000UF 20V CAPACITOR

    MDS350L

    Abstract: 1030 PULSED
    Text: R.3.A.992605-HERIC MDS350L 350 Watts, 45 Volts, Pulsed Avionics 1030 - 1090 MHz ADVANCED ISSUE GENERAL DESCRIPTION CASE OUTLINE 55KT Style 1 The MDS350L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The


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    PDF 992605-HERIC MDS350L MDS350L 1030 PULSED

    1458

    Abstract: L-Band 1200-1400 MHz IC 1458
    Text: 1214 - 300 300 Watts - 50 Volts, 100µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the band 1200 to


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    TAN300

    Abstract: No abstract text available
    Text: TAN 300 300 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven


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    PDF 25oC2 TAN300 TAN300

    700 v power transistor

    Abstract: No abstract text available
    Text: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    PDF 25oC2 700 v power transistor

    Untitled

    Abstract: No abstract text available
    Text: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven


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    PDF 25oC2 1750akdown

    J3 transistor

    Abstract: ADVANCED POWER TECHNOLOGY
    Text: 0910-300Rel 1 0910– 300 300 Watts - 50 Volts, 50µs, 2% Radar 870 - 1000 MHz Preliminary GENERAL DESCRIPTION The 0910-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at fifty microseconds pulse


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    PDF 0910-300Rel J3 transistor ADVANCED POWER TECHNOLOGY

    TCS450

    Abstract: No abstract text available
    Text: TCS450 450 Watts, 45 Volts, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION The TCS450 s a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz, with the pulse width and duty required for TCAS applications. The device has gold


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    PDF TCS450 TCS450 25oC2

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    electrolytic capacitor, .1uF

    Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
    Text: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


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    PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf

    df transistor

    Abstract: 55KT
    Text: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven


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    PDF 25oC2 1750ower df transistor 55KT

    1030 mhz

    Abstract: TPR700 700 v power transistor
    Text: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 – 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input


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    PDF 25oC2 TPR700 1030 mhz TPR700 700 v power transistor

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    1030

    Abstract: MDS170L 1030 PULSED
    Text: MDS170L 170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz GENERAL DESCRIPTION The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The


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    PDF MDS170L MDS170L 25oC2 1030 1030 PULSED

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    MDS400

    Abstract: No abstract text available
    Text: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold


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    PDF MDS400 MDS400

    JTDA150A

    Abstract: No abstract text available
    Text: JTDA 150A 145 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDA-150A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input and output prematch for broadband performance. The


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    PDF JTDA-150A 25oC2 JTDA150A

    DME 40

    Abstract: No abstract text available
    Text: DME 500 500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    PDF 25oC2 DME 40

    1718-32L

    Abstract: No abstract text available
    Text: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier


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    PDF 1718-32L 1718-32L

    RF 150M

    Abstract: 0910-150M 150M Advanced Power Technology
    Text: 0910-150M 0910 – 150M 150 Watts - 48 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed


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    PDF 0910-150M 0910-150M RF 150M 150M Advanced Power Technology

    1214-110

    Abstract: 1214-110M
    Text: 1214-110M 110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed


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    PDF 1214-110M 1214-110M 1214-110

    220MF

    Abstract: 17JJ L-Band 1200-1400 MHz
    Text: •r T. A A d van ced R O W ER Te c h n o lo g y R F 1214 300 - 300 W atts - 50 Volts, 100|is, 10% Radar 1200- 1400 M Hz G EN ERA L DESCRIPTION T he 1214-300 is an internally m atchcd, COMMON B A SE tran sisto r capable o f pro v id in g 300 W atts o f pulsed RF output pow er at one hundred


    OCR Scan
    PDF 220MF, 220MF 17JJ L-Band 1200-1400 MHz