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    55BT Price and Stock

    onsemi MMSZ5255BT1G

    DIODE ZENER 28V 500MW SOD123
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    DigiKey MMSZ5255BT1G Digi-Reel 107,251 1
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    MMSZ5255BT1G Reel 105,000 3,000
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    TME MMSZ5255BT1G 514 1
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    Master Electronics MMSZ5255BT1G 36,000
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    Vishay Semiconductors 1N5255B-TR

    DIODE ZENER 28V 500MW DO35
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    DigiKey 1N5255B-TR Cut Tape 48,686 1
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    1N5255B-TR Reel 30,000 10,000
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    TE Connectivity RQ73C1E2K55BTD

    RES 2.55 KOHMS 0.1% 1/16W 0402
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    DigiKey RQ73C1E2K55BTD Digi-Reel 12,449 1
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    TE Connectivity RP73PF1E2K55BTD

    RES 2.55K OHM 0.1% 1/10W 0402
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    DigiKey RP73PF1E2K55BTD Cut Tape 8,788 1
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    TE Connectivity RA73F1J2K55BTD

    RA73F 1J 2K55 0.1% 5K RL
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    DigiKey RA73F1J2K55BTD Digi-Reel 4,970 1
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    Find more 55BT price and stock on Findchips.com

    55BT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    in 3003 TRANSISTOR

    Abstract: 3003 transistor
    Text: 3003 3 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT-1, STYLE 1 The 3003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor


    Original     		PDF 55BT-1, in 3003 TRANSISTOR 3003 transistor

    3001 transistor

    Abstract: 100 watt transistor
    Text: 3001 1 Watt - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT, STYLE 1 The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor


    Original     		PDF

    23A003

    Abstract: No abstract text available
    Text: 23A003 0.3 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT, STYLE 2 B08 The23A003 is a COMMON EMITTER transistor capable of providing 0.3 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 23A003 The23A003 23A003

    RF TRANSISTOR 1 WATT

    Abstract: No abstract text available
    Text: 2010 10 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT-1, Style The 2010 is a COMMON BASE transistor capable of providing 10 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The


    Original     		PDF 55BT-1, RF TRANSISTOR 1 WATT

    Untitled

    Abstract: No abstract text available
    Text: 101/101A 1 Watt - 28 Volts, Class C Microwave, 500-1200 MHz GENERAL DESCRIPTION CASE OUTLINE The 101/101A is a COMMON BASE transistor capable of providing 1 Watt Class C, RF output power at 500-1200 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The


    Original     		PDF 101/101A 101/101A 55BT-1,

    AFEM-S102

    Abstract: 2400 ie bt 13 g SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
    Text: AFEM-S102 2.5 GHz WiFi/BT FEM Data Sheet Description Features Avago Technologies AFEM-S102 FEM integrates an SP3T antenna switch, TX Path Coupler and FBAR Co-Existence Filter for applications with IEEE 802.11 b/g/n WiFi and Bluetooth modulation. The FEM exhibits low Insertion


    Original     		PDF AFEM-S102 AFEM-S102 AFEM-S102-BLKG AFEM-S102-TR1G AV02-2882EN 2400 ie bt 13 g SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER

    fe 8622

    Abstract: 422-371 23A025 521603 18896
    Text: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 23A025 23A025 fe 8622 422-371 521603 18896

    23A017

    Abstract: 33797 4561 140452
    Text: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 23A017 23A017 33797 4561 140452

    100 watt transistor

    Abstract: No abstract text available
    Text: 2001 1.0 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor


    Original     		PDF 55BT-1, 100 watt transistor

    2 watt rf transistor

    Abstract: No abstract text available
    Text: 2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor is


    Original     		PDF 55BT-1, 2 watt rf transistor

    67334

    Abstract: data sheet IC 74266 74266 IC 74160 IC 74160 DATA SHEET ic 74266 data sheet IC 7474 IC 4614 IC 7474 datasheet 55295
    Text: 23A005 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A005 is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold


    Original     		PDF 23A005 23A005 Temper5376 67334 data sheet IC 74266 74266 IC 74160 IC 74160 DATA SHEET ic 74266 data sheet IC 7474 IC 4614 IC 7474 datasheet 55295

    msc 1900 2900

    Abstract: 02580 4435 ic
    Text: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300MHz GENERAL DESCRIPTION The 80143 is a common emitter transistor capable of providing 1.0Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high


    Original     		PDF 2300MHz msc 1900 2900 02580 4435 ic

    transistor 3005

    Abstract: No abstract text available
    Text: 3005 5 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE The 3005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor


    Original     		PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2005 5.0 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor


    Original     		PDF 55BT-1,

    4435 ic

    Abstract: data sheet IC 4435 IC 2272 DATASHEET IC 7446 1140-17 02580 2482 TRANSISTOR data sheet ic 7446 IC 7446 A 158314
    Text: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 80143 is a COMMON EMITTER transistor capable of providing 1.0 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF

    69099

    Abstract: 75902 79121 23A008 23A008-2 305303
    Text: 23A008 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A008 is a COMMON EMITTER transistor capable of providing up to 0.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 23A008 23A008 Tempe5384 69099 75902 79121 23A008-2 305303

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    23A017

    Abstract: No abstract text available
    Text: U.E.IIELI ., fine. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 23A017 1.7 Watts, 20 Volts, 280 mA Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7


    Original     		PDF 23A017 23A017 280mA

    IC 7486

    Abstract: ic 7435 7486 7486 ic C 4927 IC 4094 ic 4580 ic 7475 23A003 transistor A 1264
    Text: 23A003 0.3 Watts, 15 Volts, Class A Linear to 2300MHz GENERAL DESCRIPTION The 23A003 is a common emitter transistor capable of providing 0.3Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high


    Original     		PDF 23A003 2300MHz 23A003 IC 7486 ic 7435 7486 7486 ic C 4927 IC 4094 ic 4580 ic 7475 transistor A 1264

    SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER

    Abstract: directional coupler wifi schematic
    Text: AFEM-S102 2.5 GHz WiFi/BT FEM Data Sheet Description Features Avago Technologies AFEM-S102 FEM integrates an SP3T antenna switch, TX Path Coupler and FBAR Co-Existence Filter for applications with IEEE 802.11 b/g/n WiFi and Bluetooth modulation. The FEM exhibits low Insertion


    Original     		PDF AFEM-S102 AFEM-S102 AFEM-S102-BLKG AFEM-S102-TR1G AV02-2882EN SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER directional coupler wifi schematic

    55bt

    Abstract: No abstract text available
    Text: 1 — - j '— -T — 01 1 1 1 1 J DIM MILLIMETER A 20.32 14.27 B C D 18.03 5.8 4 E F G H 1 3.05 1.02 x 45° 5.8 4 4.57 0.13 J K M N 3.30 1.52 1.27 3.30 DIA K TOL .13 .13 INCHES .800 .562 TOL .005 .005 MIN .13 .710 .230 MIN .005 .130 .060 .050 .130 DIA TT


    OCR Scan     		PDF 55BTR 55bt

    MIL-C-55302

    Abstract: 600-1-9P 610-1-25P 600-1-17SD16 600-1-17P 615-1-23P 600-1-33SD16 ST600-1-41P1 Soldering profile S_6001 615-1-23SD16
    Text: 610-1-25SD16 M55302/B-02 600-1-77SD16 (M55302/6-06) 615-1-23SD16 (M55302/2-04) 610-1-25P (M55302/7-02) 600-1-77P (M55302/4-06) 615-1-23 P (M55302/1-04) FEATURES • A micro-miniature, right angle plug and receptacle connector designed for use with single sided, double sided and multi-layered board-to-board applications.


    OCR Scan     		PDF 610-1-25SD16 M55302/B-02) 610-1-25P M55302/7-02) 600-1-77SD16 M55302/6-06) 600-1-77P M55302/4-06) 615-1-23SD16 M55302/2-04) MIL-C-55302 600-1-9P 610-1-25P 600-1-17SD16 600-1-17P 615-1-23P 600-1-33SD16 ST600-1-41P1 Soldering profile S_6001 615-1-23SD16