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    5551 TRANSISTOR Search Results

    5551 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    5551 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5551

    Abstract: 5551 transistor 5551 datasheet 5401 555-1
    Text: 5551 5551 Silicon NPN Epitaxial Transistor Description: The 5551 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥160V@IC=1mA ●Complementary to 5401 Chip Appearance


    Original     		PDF VCEO160V 440um 440um 110um 110um 5551 5551 transistor 5551 datasheet 5401 555-1

    1N914 SOT-23

    Abstract: ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 SOT-23 ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G

    1N914 SOT-23

    Abstract: MMBT550LT1
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 OT-23-3 1N914 SOT-23 MMBT550LT1

    Untitled

    Abstract: No abstract text available
    Text: MMDT5401 Dual Transistor NPN/PNP SOT-363 Features — Epitaxial Planar Die Construction — Complementary NPN Type Available(MMDT 5551) — Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF MMDT5401 OT-363 -100A -10mA -50mA 100MHz -200A,

    5401 transistor

    Abstract: 5401 5551 transistor transistor 5401
    Text: 5401 5401 Silicon PNP Epitaxial Transistor Description: The 5401 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥150V@IC=1mA ●Complementary to 5551 Chip Appearance


    Original     		PDF VCEO150V 440um 440um 110um 110um -120V, 5401 transistor 5401 5551 transistor transistor 5401

    MMDT5401

    Abstract: K4m TRANSISTOR J-STD-020A MMDT5401-7 MMDT5401-7-F
    Text: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT5401 Features • · · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5401 OT-363, J-STD-020A MIL-STD-202, DS30169 MMDT5401 K4m TRANSISTOR J-STD-020A MMDT5401-7 MMDT5401-7-F

    5551

    Abstract: MMDT5401
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching


    Original     		PDF OT-363 MMDT5401 OT-363 -10mA -50mA -10mA 100MHz -200A, 5551 MMDT5401

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1G MMBT5551LT3 5551 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D

    5551

    Abstract: F MARKING
    Text: BCP5551 NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking: 5551 XXXX xxxx = Date Code


    Original     		PDF BCP5551 OT-89 100MHz 01-Jun-2002 5551 F MARKING

    Untitled

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C MIL-STD-202, PNP5401)

    MMDT5401

    Abstract: No abstract text available
    Text: MMDT5401 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMDT 5551 MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


    Original     		PDF MMDT5401 OT-363 2002/95/EC MMDT5401

    Untitled

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 OT-363, MIL-STD-202, -10mA, -50mA,

    Untitled

    Abstract: No abstract text available
    Text: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Also Available in Lead Free Version


    Original     		PDF MMDT5401 OT-363 OT-363, J-STD-020A MIL-STD-202, DS30169

    BR 5551

    Abstract: 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP


    Original     		PDF WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz BR 5551 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor

    cd5551

    Abstract: CD 5551 5551 2N5551
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR 2N5551 9AW TO-92 CBE MARKING : CD 5551 High Voltage NPN Transistor For General Purpose And Telephony Applications.


    Original     		PDF 2N5551 C-120 cd5551 CD 5551 5551 2N5551

    PNP5401

    Abstract: J-STD-020A MMDT5451 code marking KNM BR 5551
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363, J-STD-020A MIL-STD-202, NPN5551) PNP5401) PNP5401 J-STD-020A MMDT5451 code marking KNM BR 5551

    K4m transistor

    Abstract: No abstract text available
    Text: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package C2 Case: SOT-363, Molded Plastic


    Original     		PDF MMDT5401 OT-363 OT-363, J-STD-020A MIL-STD-202, MMDT5401-7 3000/Tape com/datasheets/ap02007 DS30169 K4m transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP


    Original     		PDF WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching


    Original     		PDF OT-363 MMDT5401 OT-363 -10mA -50mA -10mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching


    Original     		PDF OT-363 MMDT5401 OT-363 -10mA -50mA -10mA 100MHz

    BR 5551

    Abstract: code marking KNM BR N 5551
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 OT-363, J-STD-020A MIL-STD-202, MMMDT5451 MMDT5451-7 BR 5551 code marking KNM BR N 5551

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 SOT-363 DUAL TRANSISTOR NPN+PNP FEATURES C1 B2 z Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP)


    Original     		PDF OT-363 MMDT5451 OT-363 -120V -10mA -50mA -10mA, -50mA,

    transistor 2N 5551

    Abstract: 5551 transistor BR 5551 5551 transistor 5551 BR 5550 2n 5551 transistor 5551 npn 2N5551 2N5550
    Text: HN/2N 5550/5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92


    OCR Scan     		PDF 2N5400 2N5401 100MHz transistor 2N 5551 5551 transistor BR 5551 5551 transistor 5551 BR 5550 2n 5551 transistor 5551 npn 2N5551 2N5550