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Abstract: No abstract text available
Text: A D V A NC E D POWER TECHNOLOGY 4*JE D • □ 5 S 7 S G ci A 0000305 d v a TST n c HAVP e d POWER ; T-3P \ - \ 5 Te c h n o lo g y APT601R3BN APT551R3BN APT601R6BN 551R6BN „ POWER MOS IV™ 600V 550V 600V 550V 7.5A 7.5A 6.5A 6.5A 1.30 £2 1.30 £2
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APT601R3BN
APT551R3BN
APT601R6BN
APT551R6BN
551R3BN
601R3BN
551R6BN
601R6BN
O-247AD
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3471A
Abstract: 601R6BN APT551R
Text: A dvanced P o w er TECHNOLOGY O D Ô S POWER MOS IV APT601R3BN APT551R3BN APT601R6BN 551R6BN 600V 550V 600V 550V 7.5A 1.3012 7.5A 1.30Q 6.5A 1.60Q 6.5A 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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APT601R3BN
APT551R3BN
APT601R6BN
APT551R6BN
551R3BN
601R3BN
551R6BN
601R6BN
APT601R
3/551R3/601R6/551R6BN
3471A
APT551R
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SML601R3BN
Abstract: LE17 SML551R3BN SML601R6BN 601R3BN 601R6BN
Text: Ö1331A7 bOE D SEMELAB PLC GODONO lili 311 • S flL B MOS POWER iFFi ä T i f t ' . -I 5 lili SML601R3BN SML551R3BN SML601R6BN 551R6BN SEM E LAB 600V 550V 600V 550V 7.5A 7.5A 6.5A 6.5A 1.30Q 1.30Q 1.60Q 1.60Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ai33ifl7
SML601R3BN
SML551R3BN
SML601R6BN
SML551R6BN
3n-15
551R3BN
601R3BN
551R6BN
601R6BN
LE17
SML551R3BN
601R6BN
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