5458 TRANSISTOR Search Results

5458 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

5458 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5458 Abstract: TA 5458 fairchild 2n5458 Text: G G S S TO-92 SOT-23 D D Mark: 6D / 61S / 6L NOTE: Source & Drain are interchangeable N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from	Original	2N5457 MMBF5457 2N5458 2N5459 MMBF5458 MMBF5459 OT-23 5458 TA 5458 fairchild 2n5458	PDF
5459 Abstract: No abstract text available Text: G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from	Original	OT-23 5459	PDF
2n5457 Abstract: 5457 MARK 61S Text: G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from	Original	2N5457 MMBF5457 2N5458 2N5459 MMBF5458 MMBF5459 OT-23 5457 MARK 61S	PDF
5458 transistor Abstract: transistor 5457 transistor 2N5457 2N5457 5458 transistor 2N5458 transistor mark igf 2N5458 2N5459 MMBF5457 Text: G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from	Original	OT-23 5458 transistor transistor 5457 transistor 2N5457 2N5457 5458 transistor 2N5458 transistor mark igf 2N5458 2N5459 MMBF5457	PDF
transistor 5457 Abstract: transistor 2N5457 5458 transistor 2N5457 TA 5458 5458 2N5458 2N5459 common drain 2N5459 MMBF5457 Text: G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from	Original	OT-23 transistor 5457 transistor 2N5457 5458 transistor 2N5457 TA 5458 5458 2N5458 2N5459 common drain 2N5459 MMBF5457	PDF
BF244B Abstract: No abstract text available Text: F6 9 -9 7 Small Outline Surface Mount Package Devices N-CHANNEL SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS BVgss Device Type VgS(OFF) Igss Min • dss Conditions Limits Max @ V gs Min Max V DS to Min Max @ V ds (nA) (V) (V) (V) (V) (nA) (mA) (mA) (V)	OCR Scan	C264B BC264C BC264D BF244A BF244B NJ26L NJ132 NJ132L BF244B	PDF
2N4221 motorola Abstract: MPF102 switch application mpf102 fet FET 2N5459 MFE131 BF245C FET 5457 2N4220 MOTOROLA 2N5459 MOTOROLA 2N3993 Text: Transistors Field effect transistors Motorola offers a line of field-effect transistors that encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety of junction FETs and MOSFETs, with N- or P-channel polarity with both single and dual gates. These FETs include devices developed for operation	OCR Scan	2N5462 MFE824 MPF102 BF245A BF245B BF245C 2N4221 motorola MPF102 switch application mpf102 fet FET 2N5459 MFE131 FET 5457 2N4220 MOTOROLA 2N5459 MOTOROLA 2N3993	PDF
2N5459 MOTOROLA Abstract: Motorola 2N5459 2n5459 2N5457 MOTOROLA 2N545 2N5457 Text: 2N5457 thru 2N5459* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Sym bol V a lu e Vd S 25 Vdc D ra in -G a te V o lta g e Vd G 25 V dc R e verse G a te -S o u rc e V o lta g e V g SR -2 5 V dc G a te C u rre n t 1g 10 m Adc T o ta l D e vice D is s ip a tio n (u T ^ = 25CC	OCR Scan	2N5457 2N5459* O-226AA) 2N5459 MOTOROLA Motorola 2N5459 2n5459 2N5457 MOTOROLA 2N545 2N5457	PDF
2n 5459 Abstract: 2N5457 Text: MOTOROLA SC 15E D § b3b7254 OGflbbMb 1 \| XSTRS/R F 2N5457 thru 2N5459 * CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S S ym bol V a lu e U n it D ra in-S ource V o ltag e Vos 25 Vdc D ra in-G ate V o ltag e Vq g 25 V dc Vg s r -2 5 V dc R a ting	OCR Scan	b3b7254 2N5457 2N5459 O-226AA) 2n 5459	PDF
2N5458 Abstract: 2N5457 Text: 2N5457, 2N5458 2N5457 and 2N5458 are Preferred Devices JFETs - General Purpose N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com	Original	2N5457, 2N5458 2N5457 2N5458	PDF
2n5458 Abstract: 2N5457 application note 2N5457 2N5638 2N5639 Text: 2N5457, 2N5458 2N5457 and 2N5458 are Preferred Devices JFETs - General Purpose N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com	Original	2N5457, 2N5458 2N5457 2N5458 r14525 2N5457/D 2N5457 application note 2N5638 2N5639	PDF
2n5457 pin out Abstract: 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent TA 5458 semiconductor 2n5457 Text: 2N5457, 2N5458 Preferred Device JFETs − General Purpose N- Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com N-Channel for Higher Gain	Original	2N5457, 2N5458 2N5457/D 2n5457 pin out 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent TA 5458 semiconductor 2n5457	PDF
mosfet 4953 Abstract: mosfet catalog Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision Tabie of Contents General Inform ation . . 3 Index by Part Num ber . 4-9 MIL-PRF-19500 Qualified Products L is t.	OCR Scan	MIL-PRF-19500 -A-20 mosfet 4953 mosfet catalog	PDF
Untitled Abstract: No abstract text available Text: 5 2 3 3 /3 8 , 5 4 5 8 / 63 / 74 , 5604 , 2-FUNCTION 4-DIGIT VF AUTOMOTIVE CLOCKS SC L5604E <01 LAMP S2 Q" S1 771 NU [~£ 3Ì~\| NU S3 [j" IGNtTKX [1_ I t] C1 0? NU Tn 62 f2 34~\| 02 a2 j* Tri c2 t>2 ¿T] g3 t 1 TESI (To Til e3 COLON [TT Til c3 t) [tT ¿U îl_] e*	OCR Scan	L5604E SCL5604E	PDF

h770 Abstract: H773 Text: MwT-H7 28 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE	Original	Fapp0001 h770 H773	PDF
4856a Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92 Text: SEMICONDUCTORS INC DTE D \| 013bbSD □□□D3G7 S \| N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)	OCR Scan	613bb5D O-92DE O-92DA 4856a Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92	PDF
SOLAR TRANSISTOR Abstract: H773 Text: MwT-H7 32 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE	Original	Fapp0001 SOLAR TRANSISTOR H773	PDF
a1154 transistor Abstract: A1154 2SA1154 Aiwa 2SA1154-T 1S955 2SC2721 5458 transistor Text: , NEC lir /\T 7 Silicon Transistor A 2SC2721 + npnx m m v u> h <* u s ftiM ffi & * ¡ m x > r >y ^ i i f f l N P N S ilic on E p ita xial T r a n s i s t o r H ig h F r e q u e n c y A m p l i f i e r , M e d i u m S p e e d S w i t c h i n g In dustrial U s e	OCR Scan	A1154 PWS10ms, cycled50% 1S955 a1154 transistor 2SA1154 Aiwa 2SA1154-T 1S955 2SC2721 5458 transistor	PDF
2N5458 equivalent Abstract: 2N4303 mpf105 equivalent 2N4302 mpf103 2N5457 equivalent MPF102 equivalent transistor 2N4303 equivalent equivalent 2N5459 2N4304 equivalent Text: Sem iconductors M icro-Electronics F.E.T.'s/P.U.T.'s/Light Detectors General Purpose Junction F.E.T.s REFERENCE T A B L E Code Min. B V qss Volts MEF101 MEF102 MEF103 MEF104 2N4302 2N4303 2N4304. 30 40 40 50 30 30 30 Volts Max. C 1S1 pF Max. 1kHz NF dB 10	OCR Scan	MEF101 19341B MEF102 31291X MEF103 19342X MEF104 19343R 2N4302 31318R 2N5458 equivalent 2N4303 mpf105 equivalent mpf103 2N5457 equivalent MPF102 equivalent transistor 2N4303 equivalent equivalent 2N5459 2N4304 equivalent	PDF
transistor 431t Abstract: transistor AS 431 431T 431 transistor TRANSISTOR 431 a 431 transistor n 431 transistor k a 431 transistor transistor 431 c 431T-5 Text: TELEDYNE RELAYS SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAY SENSITIVE SPDT Actual Size SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression 431DD SPDT relay with internal diodes for coil transient suppression and polarity	Original	431DD transistor 431t transistor AS 431 431T 431 transistor TRANSISTOR 431 a 431 transistor n 431 transistor k a 431 transistor transistor 431 c 431T-5	PDF
432T-5 Abstract: 432T ER432M DPDT transistor ER432M4-26A 12 Volt DPDT Relay 432D 432D RELAY 9 Volt DPDT Relay 432T-18 Text: TELEDYNE RELAYS SERIES 432 ESTABLISHED RELIABILITY TO-5 RELAY SENSITIVE DPDT Actual Size SERIES DESIGNATION RELAY TYPE 432 DPDT basic relay 432D DPDT relay with internal diode for coil transient suppression 432DD DPDT relay with internal diodes for coil transient suppression and polarity	Original	432DD 432T-5 432T ER432M DPDT transistor ER432M4-26A 12 Volt DPDT Relay 432D 432D RELAY 9 Volt DPDT Relay 432T-18	PDF
pj211 Abstract: J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117 Text: INT ER F E T CORP 2bE D • 4fl2bflflä 0 0 0 0 2 3 6 T ■ C1 T '- Z Z - Z S ' -r~3s-~?.5 N Channel JFETs _ SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrical Characteristics at TA = 25°C VGSlo»i V Bfl\|GSS less Ui lG	OCR Scan	NJ132 NJ132 pj211 J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117	PDF
transistors BC 543 Abstract: F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459 Text: NPN Multiple Chip Transistors Device No. [Mark] MMPQ2369A Case Style SO-16 S3 V CBO V VCES* EBO (V) (V) Min (V) Min Min VCEO 15 40 4.5 I CBO ICES* (nA) Max 400 @ VCB (V) Min 20 40 40 30 20 h FE V CE 10 10 30 100 0.35 1 0.4 1 0.2 0.2 & @ Max (mA) (V) 120	Original	MMPQ2369A SO-16 FMBA14 FFB2222A FMB2222A MMPQ2222A transistors BC 543 F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459	PDF
P290E Abstract: OP290 pmi op290 Text: PMÌ OP-290 PRECISION LOW-POWER MICROPOWER DUAL OPERATIONAL AMPLIFIER isiiin M o n o l i t h i c ^ FEA TU R ES • Single/Dual Supply Operation. +1.6V to +36V .±0.8V to ±18V • True Single-Supply Operation; Input and Output Voltage	OCR Scan	OP-290 00V/mV 12pprn/ EF-43 OP-290. 200ft P290E OP290 pmi op290	PDF

5458 TRANSISTOR Search Results

5458 TRANSISTOR Result Highlights (5)

5458 TRANSISTOR Datasheets Context Search

5458

5459

2n5457

5458 transistor

transistor 5457

BF244B

2N4221 motorola

2N5459 MOTOROLA

2n 5459

2N5458

2n5458

2n5457 pin out

mosfet 4953

Untitled

h770

4856a

SOLAR TRANSISTOR

a1154 transistor

2N5458 equivalent

transistor 431t

432T-5

pj211

transistors BC 543

P290E