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    540MA Price and Stock

    Eaton Corporation SR-5-40MA-BK

    Fuses with Leads - Through Hole SR-5 40MA
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    Mouser Electronics SR-5-40MA-BK
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    onsemi AMI8540MAG

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    Bristol Electronics AMI8540MAG 14
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    Nichicon Corporation UVZ2A331MHD

    Aluminum Electrolytic Capacitors - Radial Leaded 100volts 330uF 20% 12.5X25 5LS
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    TTI UVZ2A331MHD Bulk 12,000 100
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    Nichicon Corporation UPW1J101MPD

    Aluminum Electrolytic Capacitors - Radial Leaded 63volts 100uF AEC-Q200
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    TTI UPW1J101MPD Bulk 29,600 200
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    Murata Manufacturing Co Ltd LQW15AN8N2G00D

    RF Inductors - SMD 8.2 NH 2%
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    TTI LQW15AN8N2G00D Reel 30,000 10,000
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    540MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T150MDGG Features Item Summary 15 H(±20%), 540mA, 600mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions


    Original     		PDF NRS4010T150MDGG 540mA, 600mA 5000pcs 100kHz 540mA 24MHz Cas100kHz

    C37 diode

    Abstract: ESJC37-08 C37 high voltage diode HIGH VOLTAGE DIODE 10kv 10KV ESJC37 ESJC37-05 ESJC37-10
    Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTAGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.


    Original     		PDF ESJC37 5kV/540mA 8kV/410mA 10kV/310mA ESJC37 24min 24min. ESJC37-05 ESJC37-08 ESJC37-10 C37 diode ESJC37-08 C37 high voltage diode HIGH VOLTAGE DIODE 10kv 10KV ESJC37-05 ESJC37-10

    C37 diode

    Abstract: C37 high voltage diode HIGH VOLTAGE DIODE 10kv transistor c37 high voltage diode 100 kv 8kv DIODE ESJC37
    Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTEGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark


    Original     		PDF ESJC37 5kV/540mA 8kV/410mA 10kV/310mA ESJC37 24min 24min. ESJC37-05 ESJC37-08 ESJC37-10 C37 diode C37 high voltage diode HIGH VOLTAGE DIODE 10kv transistor c37 high voltage diode 100 kv 8kv DIODE

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T150MDGG Features Item Summary 15 H(±20%), 540mA, 600mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions


    Original     		PDF NRS4010T150MDGG 540mA, 600mA 5000pcs 100kHz 540mA 600mA 24MHz

    Untitled

    Abstract: No abstract text available
    Text: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN62D0SFD 430mA 540mA AEC-Q101 DS35473

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T150MDGG Features Item Summary 15 H(±20%), 540mA, 600mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions


    Original     		PDF NRS4010T150MDGG 540mA, 600mA 5000pcs 100kHz 540mA 24MHz Cas100kHz

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T150MDGG Features Item Summary 15 H(±20%), 540mA, 600mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions


    Original     		PDF NRS4010T150MDGG 540mA, 600mA 5000pcs 100kHz 540mA 24MHz Cas100kHz

    Untitled

    Abstract: No abstract text available
    Text: DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) max 20V 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it ideal for high efficiency power management


    Original     		PDF DMN2004DWK AEC-Q101 DS30935

    Untitled

    Abstract: No abstract text available
    Text: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA N EW PRODU CT V(BR)DSS • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN62D0SFD 540mA 430mA AEC-Q101 DS35473

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC3225T100KR Features Item Summary 10 H(±10%), 540mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions


    Original     		PDF LBC3225T100KR 540mA, 1000pcs 540mA 23MHz

    3D Plus

    Abstract: PQFP64 3D-PLUS F7853 3D Plus sram 3DS16-325 3D plus memory 16 f78532
    Text: PRELIMINARY 16Mbit CMOS SRAM ELECTRONICS 3DS16-325 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating FEATURES DESCRIPTION Fast Access Time : 15 or 20ns Single 5.0 ± 0.5V Power Supply Power Dissipation - Standby 80mA - Operating 540mA Max. TTL Compatible Inputs and Outputs


    Original     		PDF 16Mbit 3DS16-325 540mA 3DS16-325 PQFP64 3DS16-325S F-78532 3DFP-0012 3D Plus PQFP64 3D-PLUS F7853 3D Plus sram 3D plus memory 16 f78532

    Untitled

    Abstract: No abstract text available
    Text: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN62D0SFD 430mA 540mA AEC-Q101 DS35473

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC3225T100KR Features Item Summary 10 H(±10%), 540mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions


    Original     		PDF LBC3225T100KR 540mA, 1000pcs 540mA 23MHz

    SLF6028T470MR59

    Abstract: SLF7045T-221MR33 SLF6028T-4R7M1R6 VP2941A SLF7045T-150M1R1
    Text: 1/2 U LT R A H I G H C U R R E N T M A G S H I E L D W O U N D I N D U C T O R S SLF MAGNETIC SHIELD WOUND INDUCTORS • SLF6028, 2424 SIZE, OFFERS 4.7µH AT 1.6A TO 100µH AT 420mA • SLF7028, 2828 SIZE, OFFERS 3.3µH AT 1.6A TO 47µH AT 540mA • SLF7032, 2828 SIZE, OFFERS 3.3µH AT 1.9A TO 1mH AT 130mA


    Original     		PDF SLF6028, 420mA SLF7028, 540mA SLF7032, 130mA SLF7045, 140mA SLF6028 VP-2941A SLF6028T470MR59 SLF7045T-221MR33 SLF6028T-4R7M1R6 VP2941A SLF7045T-150M1R1

    LXHL-LW6C

    Abstract: CR43-2R7 Philips pmeg LT1930 IRLML2502 LT1613 LT3467 LT3467A CR43-4R7 for IRLML2502
    Text: DESIGN FEATURES 1.1A Boost Provides Soft-Start Capability in Tiny ThinSOT Package Introduction by Brian Adolf L1 2.7µH C1 4.7µF OFF ON C3 0.047µF 4 D1 6 1 VIN SW SHDN LT3467 5 SS R1 402k C4 3.3pF VOUT 5V 765mA AT VIN = 4.2V, 540mA AT VIN = 3.3V, 360mA AT VIN = 2.6V


    Original     		PDF LT3467 765mA 540mA 360mA MBRM120 CR43-2R7 OT23--ample LT3467A. LT3467A LXHL-LW6C CR43-2R7 Philips pmeg LT1930 IRLML2502 LT1613 LT3467 LT3467A CR43-4R7 for IRLML2502

    C37 high voltage diode

    Abstract: HIGH VOLTAGE DIODE 10kv ESJC37-10 transistor C37 C37 diode ESJC37 ESJC37-05 ESJC37-08 8kv DIODE
    Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTAGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.


    Original     		PDF ESJC37 5kV/540mA 8kV/410mA 10kV/310mA ESJC37 24min 24min. ESJC37-05 ESJC37-08 ESJC37-10 C37 high voltage diode HIGH VOLTAGE DIODE 10kv ESJC37-10 transistor C37 C37 diode ESJC37-05 ESJC37-08 8kv DIODE

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T150MDGG Features Item Summary 15 H(±20%), 540mA, 600mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions


    Original     		PDF NRS4010T150MDGG 540mA, 600mA 5000pcs 100kHz 540mA 24MHz Cas100kHz

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T150MDGG Features Item Summary 15 H(±20%), 540mA, 600mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions


    Original     		PDF NRS4010T150MDGG 540mA, 600mA 5000pcs 100kHz 540mA 24MHz Cas100kHz

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series AQ1053N3S-T Features Item Summary 3.3nH(-0.3nH to +0.3nH), 540mA, 8, 0402 Lifecycle Stage Mass Production Standard packaging quantity (minimum)


    Original     		PDF AQ1053N3S-T 540mA, 10000pcs 100MHz 175mm 540mA 710mA 6000MHz

    Untitled

    Abstract: No abstract text available
    Text: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN62D0SFD 430mA 540mA AEC-Q101 DS35473

    Untitled

    Abstract: No abstract text available
    Text: DMP2004DWK DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 20V 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		PDF DMP2004DWK 540mA AEC-Q101 DS30940

    C37 diode

    Abstract: C37-10 diode diode 10kv 5KV DIODE ESJC37-10 transistor c37 ESJC37 ESJC37-05 ESJC37-08 high voltage diode 100 kv
    Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTEGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark


    Original     		PDF ESJC37 5kV/540mA 8kV/410mA 10kV/310mA ESJC37 24min 24min. ESJC37-05 ESJC37-08 ESJC37-10 C37 diode C37-10 diode diode 10kv 5KV DIODE ESJC37-10 transistor c37 ESJC37-05 ESJC37-08 high voltage diode 100 kv

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T150MDGG Features Item Summary 15 H(±20%), 540mA, 600mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions


    Original     		PDF NRS4010T150MDGG 540mA, 600mA 5000pcs 100kHz 540mA 24MHz Cas100kHz

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T150MDGG Features Item Summary 15 H(±20%), 540mA, 600mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions


    Original     		PDF NRS4010T150MDGG 540mA, 600mA 5000pcs 100kHz 540mA 24MHz Cas100kHz