Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    5401 TRANSISTOR Search Results

    5401 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    5401 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5401 transistor

    Abstract: 5401 5551 transistor transistor 5401
    Text: 5401 5401 Silicon PNP Epitaxial Transistor Description: The 5401 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥150V@IC=1mA ●Complementary to 5551 Chip Appearance


    Original     		PDF VCEO150V 440um 440um 110um 110um -120V, 5401 transistor 5401 5551 transistor transistor 5401

    5551

    Abstract: 5551 transistor 5551 datasheet 5401 555-1
    Text: 5551 5551 Silicon NPN Epitaxial Transistor Description: The 5551 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥160V@IC=1mA ●Complementary to 5401 Chip Appearance


    Original     		PDF VCEO160V 440um 440um 110um 110um 5551 5551 transistor 5551 datasheet 5401 555-1

    BR 5551

    Abstract: 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP


    Original     		PDF WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz BR 5551 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor

    pwm drive optocoupler high side MOSFET Gate Drive

    Abstract: 817 opto-coupler ic circuit diagram 817 Optocoupler datasheet high side IGBT driver optocoupler fabrication of an isolation circuit using optocoupler HCNW4506 817 Optocoupler optocoupler 817 avago, hcpl 817 optocoupler C 817
    Text: Optocouplers Isolated Circuit for Intelligent Power Modules IPM and Gate Drivers Application Note 5401 Introduction IPM (smart, intelligent or integrated power module) hybrids power IGBTs (insulated gate bipolar transistors) and gate-driver circuits into a single compact package.


    Original     		PDF AV02-1480EN pwm drive optocoupler high side MOSFET Gate Drive 817 opto-coupler ic circuit diagram 817 Optocoupler datasheet high side IGBT driver optocoupler fabrication of an isolation circuit using optocoupler HCNW4506 817 Optocoupler optocoupler 817 avago, hcpl 817 optocoupler C 817

    equivalent of 5401 transistor

    Abstract: 5401 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMDT5401 -150V MMDT5401L-AL6-R MMDT5401G-AL6-R OT-363 QW-R218-021 equivalent of 5401 transistor 5401 transistor

    Untitled

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 OT-363, MIL-STD-202, PNP5401 -100mA, -10mA, -120V,

    PNP5401

    Abstract: J-STD-020A MMDT5451 code marking KNM BR 5551
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363, J-STD-020A MIL-STD-202, NPN5551) PNP5401) PNP5401 J-STD-020A MMDT5451 code marking KNM BR 5551

    CC5401

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.


    Original     		PDF CC5401 C-120 CC5401

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.


    Original     		PDF CC5401 C-120

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP


    Original     		PDF WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz

    BR 5551

    Abstract: code marking KNM BR N 5551
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 OT-363, J-STD-020A MIL-STD-202, MMMDT5451 MMDT5451-7 BR 5551 code marking KNM BR N 5551

    Untitled

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 OT-363, MIL-STD-202, -10mA, -50mA,

    MMDT5451

    Abstract: PNP5401
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 OT-363, MIL-STD-202, -10mA, -50mA, MMDT5451 PNP5401

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 SOT-363 DUAL TRANSISTOR NPN+PNP FEATURES C1 B2 z Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP)


    Original     		PDF OT-363 MMDT5451 OT-363 -120V -10mA -50mA -10mA, -50mA,

    transistor 5551

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 OT-363, J-STD-020A MIL-STD-202, DS30171 MMDT5451-7 transistor 5551

    Untitled

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Complementary Pair One 5551-Type NPN One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type PNP5401 NPN5551 OT-363 DS30171

    MMDT5451

    Abstract: NPN5551
    Text: SPICE MODEL: MMDT5451 MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C PNP5401) MMDT5451 NPN5551

    Untitled

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C MIL-STD-202, PNP5401)

    F MARKING

    Abstract: No abstract text available
    Text: BCP5401 PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking:5401 XXXX xxxx = Date Code


    Original     		PDF BCP5401 OT-89 -120V, -10mA, -50mA, -10mA -50mA F MARKING

    MARKING W1 AD

    Abstract: CC5401
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.


    Original     		PDF CC5401 C-120 MARKING W1 AD CC5401

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: MMDT5451 MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C MIL-STD-202, DS30171

    2N555

    Abstract: 5401 transistor 2N 5551 2N5400 5551 555-1 transistor 2N5401 1000C 2N5401 2N5550
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		PDF 2N5400 2N5401 2N5550 2N5551 2N5400, 2N5401 2N5550, O-92A 2N5400 2N555 5401 transistor 2N 5551 5551 555-1 transistor 2N5401 1000C

    transistor 2N 5401

    Abstract: 5401 5401 transistor 2n5401 15KHZ 2N5550 2N5551 transistor 5401
    Text: HN / 2N 5400/5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. rK 3 '6 H i As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured


    OCR Scan     		PDF 2N5550 2N5551 HN/2N5401 100MHz 15KHZ transistor 2N 5401 5401 5401 transistor 2n5401 transistor 5401

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		PDF 2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550,