Untitled
Abstract: No abstract text available
Text: 1N6489+JAN Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%) P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k2.5 Maximum Operating Temp (øC)175
|
Original
|
1N6489
pp/10k2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N6489+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%) P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k2.5 Maximum Operating Temp (øC)175
|
Original
|
1N6489
pp/10k2
|
PDF
|
ZXT951
Abstract: d1 marking code dpak transistor d marking code dpak transistor
Text: A Product Line of Diodes Incorporated ZXT951K Green 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR Features Mechanical Data • • • • • • • • • • • • BVCEO > -60V RSAT = 53mΩ Typical Continuous Collector Current IC = -6A Up to 15A Peak Current
|
Original
|
ZXT951K
AEC-Q101
J-STD-020
MIL-STD-202,
DS33642
ZXT951
d1 marking code dpak transistor
d marking code dpak transistor
|
PDF
|
CEP540N
Abstract: TF510 cep540
Text: CEP540N/CEB540N CEF540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS ON = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
|
Original
|
CEP540N/CEB540N
CEF540N
O-220
O-263
O-220F
CEP540N
TF510
cep540
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N4732 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k2.6 Maximum Operating Temp (øC)200’
|
Original
|
1N4732
pp/10k2
StyleDO-204AL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N6489US+JAN Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%)5 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.8 Temp Coef pp/10k.025ñ Maximum Operating Temp (øC)175
|
Original
|
1N6489US
pp/10k
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZM4732 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.7 @I(Z) (A) (Test Condition)53m Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-213AA
|
Original
|
ZM4732
pp/10k
StyleDO-213AA
|
PDF
|
GP4953
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/08/08 REVISED DATE : GP4953 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 53m -5A Description The GP4953 provide the designer with the best combination of fast switching, ruggedized device design, low
|
Original
|
GP4953
GP4953
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CEP540L/CEB540L CEF540L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS ON = 50mΩ @VGS = 10V. RDS(ON) = 53mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
|
Original
|
CEP540L/CEB540L
CEF540L
O-220
O-263
O-220F
|
PDF
|
CED540N
Abstract: No abstract text available
Text: CED540N/CEU540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS ON = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.
|
Original
|
CED540N/CEU540N
O-251
O-252
O-251
CED540N
|
PDF
|
4953SS
Abstract: SSG4953 4953S mosfet vgs 5v 5a
Text: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching,
|
Original
|
SSG4953
SSG4953
27Typ.
23-Jun-2010
4953SS
4953S
mosfet vgs 5v 5a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HITK0303MP 30V, 3.7A, 53mmax. Silicon N Channel MOS FET Power Switching R07DS0484EJ0200 Rev.2.00 May 09, 2013 Features • Low on-resistance RDS on = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching
|
Original
|
HITK0303MP
R07DS0484EJ0200
PLSP0003ZB-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CEM4401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -5.4A, RDS ON = 53mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
|
Original
|
CEM4401
|
PDF
|
GSS4953
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE :2006/11/09D GSS4953 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 53m -5A Description The GSS4953 provide the designer with the best combination of fast switching, ruggedized device design, low
|
Original
|
2006/11/09D
GSS4953
GSS4953
|
PDF
|
|
|
C3021LD
Abstract: DMC3021 DMC3021LSD DMC3021LSD-13 LOGO TD C3021 C3021l AT/C3021LD
Text: DMC3021LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • NEW PRODUCT • • • • • • • • Low On-Resistance N-Channel: 21mΩ @ 10V 32mΩ @ 4.5V P-Channel: 39mΩ @ 10V 53mΩ @ 4.5V Low Input Capacitance Fast Switching Speed
|
Original
|
DMC3021LSD
AEC-Q101
J-STD-020
DS32152
C3021LD
DMC3021
DMC3021LSD
DMC3021LSD-13
LOGO TD
C3021
C3021l
AT/C3021LD
|
PDF
|
CEM4953
Abstract: diode 640
Text: CEM4953 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.9A, RDS ON = 53mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
|
Original
|
CEM4953
CEM4953
diode 640
|
PDF
|
cep540n
Abstract: No abstract text available
Text: CEP540N/CEB540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS ON = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
|
Original
|
CEP540N/CEB540N
O-220
O-263
cep540n
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LP9435ET1G GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS ON < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D D D 8 7 D
|
Original
|
LP9435ET1G
|
PDF
|
DMN2104L-7
Abstract: J-STD-020D DMN2104L
Text: DMN2104L N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance • 53mΩ @VGS = 4.5V • 104mΩ @VGS = 2.5V Low Gate Threshold Voltage
|
Original
|
DMN2104L
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS31560
DMN2104L-7
J-STD-020D
DMN2104L
|
PDF
|
APM4953
Abstract: PM4953 ANPEC Anpec Electronics marking G5 MOSFET mosfet 4953 5H MARKING 6H MARKING 27BSC 4953 mosfet
Text: APM4953 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -30V/-4.9A, RDS ON = 53mΩ(typ.) @ VGS = -10V 5 RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V & , % , Super High Density Cell Design / Reliable and Rugged 5 ! $ , SO-8 Package
|
Original
|
APM4953
-30V/-4
APM4953
PM4953
ANPEC
Anpec Electronics
marking G5 MOSFET
mosfet 4953
5H MARKING
6H MARKING
27BSC
4953 mosfet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • N EW PRODU CT • • • • • • • • Low On-Resistance N-Channel: 32m @ 10V 46m @ 4.5V P-Channel: 39m @ 10V 53m @ 4.5V Low Input Capacitance Fast Switching Speed
|
Original
|
DMC3032LSD
AEC-Q101
J-STD-020
DS32153
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
|
Original
|
SSG4953
SSG4953
27Typ.
01-Jun-2006
|
PDF
|
APM60
Abstract: No abstract text available
Text: APM6003NF N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/26A, G RDS ON =38mΩ (typ.) @ VGS=10V RDS(ON)=53mΩ (typ.) @ VGS=4.5V • • Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available D (RoHS Compliant)
|
Original
|
APM6003NF
0V/26A,
O-220
APM6003N
O-220
JESD-22,
APM60
|
PDF
|
transistor 1fp
Abstract: 52ga 414n 53m diode
Text: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)
|
OCR Scan
|
LS1S1M/S2M/53M
NJL5151M
E8256I)
52M/53M
NJL5151M/52M/53M
transistor 1fp
52ga
414n
53m diode
|
PDF
|
