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    TIC 1160

    Abstract: No abstract text available
    Text: 5361000A1/A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 5361000A1 is a 1M bits x 36 Dynamic RAM high d e nsity m em ory m odule. The Sam sung 5361000A1 co n sist o f eig h t CMOS 1 M x 4 bit


    OCR Scan     		PDF KMM5361000A1/A1G 5361000A1 M5361OOOA1 KMM5361000A1-10 100ns 130ns 150ns 180ns KMM5361000A1 TIC 1160

    KMM536100

    Abstract: KMM5361000A7
    Text: KMM5361000A/AG DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit DRAMs in 20-pin SOJ package and four CMOS 1 M X 1


    OCR Scan     		PDF KMM5361000A/AG 361000A bitsX36 20-pin 22fjF KMM5361OOOA 361000A- 10OOA- KMM536100 KMM5361000A7