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    Untitled

    Abstract: No abstract text available
    Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		PDF W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB

    Untitled

    Abstract: No abstract text available
    Text: W3H264M16E-XBX ADVANCED* 256MB – 2 x 64M x 16 DDR2 SDRAM 79 PBGA FEATURES BENEFITS  Data rate = 400 Mb/s, 533 Mb/s, 667 Mb/s*  Larger ball pitch for higher reliability  Package:  Footprint compatible with W3H64M16E • 79 Plastic Ball Grid Array PBGA , 11 x 14mm


    Original     		PDF W3H264M16E-XBX 256MB W3H64M16E 128MB"

    DNU-A13

    Abstract: No abstract text available
    Text: W3H64M16E-XBX 128MB – 64M x 16 DDR2 SDRAM 79 PBGA FEATURES BENEFITS  Data rate = 400 Mb/s, 533 Mb/s  Larger ball pitch for higher reliability  Package:  Pinout compatible with 2-Rank Version • 79 Plastic Ball Grid Array PBGA , 11 x 14mm


    Original     		PDF W3H64M16E-XBX 128MB DNU-A13 128MB"

    W3H32M72E-XSBX

    Abstract: calibration definition
    Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX W3H32M72E-XSBX calibration definition

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Programmable CAS latency: 3, 4, 5, or 6 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX W3H32M72E-XSBX 667Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX ADVANCED* 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		PDF W3H32M64E-XSBX W3H32M64E-XSBX

    aspire MOTHERBOARD CIRCUIT diagram

    Abstract: pentium 4 northwood N150X3-L05 000A0000-000BFFFF acer aspire 1600 M9-CSP32 R01-A0X acer aspire motherboard SiS645DX rpm sca 118
    Text: Aspire 1600 Service Guide Service guide files and updates are available on the CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.47Y01.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Aspire 1600 service guide.


    Original     		PDF 47Y01 aspire MOTHERBOARD CIRCUIT diagram pentium 4 northwood N150X3-L05 000A0000-000BFFFF acer aspire 1600 M9-CSP32 R01-A0X acer aspire motherboard SiS645DX rpm sca 118

    HSD150PX11

    Abstract: t62l194 MK3018GAS T62I194 celeron 1.7 ghz inverter ambit t62l194 ambit inverter t62* circuit MK3018GAP prestigio PCI 1520
    Text: PRESTIGIO SIGNORE 152 TECHNICAL SERVICE MANUAL Service Guide PART NO.: 49.42W01.Z01 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on OpenBook 1846 service guide. Date II Chapter Updates Copyright Copyright 2002 by Wistron Corporation. All rights reserved. No part of this publication may be reproduced,


    Original     		PDF 42W01 HSD150PX11 t62l194 MK3018GAS T62I194 celeron 1.7 ghz inverter ambit t62l194 ambit inverter t62* circuit MK3018GAP prestigio PCI 1520

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges „ Organized as 32M x 64, user configurable as 2 x


    Original     		PDF W3H32M64E-XSBX 667Mbs

    W3H32M72E

    Abstract: BA0BA12
    Text: White Electronic Designs W3H32M72E-XSBX 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX 667Mbs 533Mbs) 650ps, -550ps, 500ps. W3H32M72E BA0BA12

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M72E-XSBX PRELIMINARY* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm


    Original     		PDF W3H64M72E-XSBX

    W3H128M72

    Abstract: W3H128M72E-XSBX W3H128M72E
    Text: White Electronic Designs W3H128M72E-XSBX Advanced* 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Package: „ CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm


    Original     		PDF W3H128M72E-XSBX W3H128M72 W3H128M72E-XSBX W3H128M72E

    W3H32M72E

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSB2X Preliminary 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


    Original     		PDF W3H32M72E-XSB2X W3H32M72E

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSBX * 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Programmable CAS latency: 3, 4, 5, or 6 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


    Original     		PDF W3H32M72E-XSBX 667Mbs

    AS4DDR264M72PBG

    Abstract: H11M1
    Text: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM


    Original     		PDF AS4DDR264M72PBG1 64Mx72 dat008 AS4DDR264M72PBG H11M1

    Untitled

    Abstract: No abstract text available
    Text: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  30% Space saving vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm


    Original     		PDF W3H64M72E-XSBX W3H64M72E-XSBXF 512MB 667Mbs 533Mbs 400Mbs

    84 FBGA

    Abstract: W3H64M72E-XSBX fbga84 ccd400
    Text: White Electronic Designs W3H64M72E-XSBX 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm „ Organized as 64M x 72 • 1.0mm pitch „ Weight: W3H64M72E-XSBX - 2.5 grams typical


    Original     		PDF W3H64M72E-XSBX W3H64M72E-XSBX 84 FBGA fbga84 ccd400

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400 Mb/s  Write latency = Read latency - 1* tCK  Package:  Commercial, Industrial and Military Temperature Ranges  Organized as 32M x 64, user configurable as 2 x


    Original     		PDF W3H32M64E-XSBX

    Untitled

    Abstract: No abstract text available
    Text: Product Nomenclature Guide: ZEÊÛđ½ƒãçٛ Logic Devices Incorporated Product Type 9D = DDR 2 = DDR2 3 = DDR3 Words 32M = 32 MB 64M = 64 MB 128M = 128 MB 256M = 256 MB 512M = 512 MB 1G = 1024 MB Wordwidth 32 = x32 64 = x64 72 = x72 80 = x80 S = Single Channel


    Original     		PDF 200MHz 400Mbs 533Mbs 333MHz 667Mbs 400MHz 800Mbs 533MHz 1066Mbs 667MHz

    H11M1

    Abstract: No abstract text available
    Text: i PEM 4.8 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES „ „ „ BENEFITS „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp


    Original     		PDF AS4DDR264M72PBG1 64Mx72 daDDR264M72PBG1 H11M1

    W3H128M72E-XSBX

    Abstract: 84 FBGA
    Text: White Electronic Designs W3H128M72E-XSBX 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Package:  CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Posted CAS additive latency: 0, 1, 2, 3 or 4


    Original     		PDF W3H128M72E-XSBX 775mA 975mA -100ps 250ps 350ps 400ps W3H128M72E-XSBX 84 FBGA

    18CO

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Organized as 64M x 64 • 1.0mm pitch


    Original     		PDF W3H64M64E-XSBX 18CO

    W3H128M72ER-XSBX

    Abstract: LDM-1 W3H128M72
    Text: White Electronic Designs W3H128M72ER-XNBX PRELIMINARY* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES  Data rate = 667, 533, 400 Mb/s  Posted CAS additive latency: 0, 1, 2, 3 or 4  Package:  Write latency = Read latency - 1* tCK  Commercial, Industrial and Military Temperature


    Original     		PDF W3H128M72ER-XNBX W3H128M72ER-XSBX LDM-1 W3H128M72

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm


    Original     		PDF W3H64M72E-XSBX