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Infineon Technologies AG SPW52N50C3FKSA1 MOSFET N-CH 560V 52A TO247-3
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52N50C3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
52N50C3 Abstract: s4615 SPW52N50C3 Text: 52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 P-TO247 Q67040-S4615 52N50C3 52N50C3 s4615 SPW52N50C3	PDF
Untitled Abstract: No abstract text available Text: 52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • Worldwide best RDS(on) in TO-247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 O-247 PG-TO247 52N50C3 009-134-A	PDF
52n50c3 Abstract: SPW52N50C3 Text: 52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-247 VDS @ Tjmax 560 V RDS(on) 0.07 Ω ID 52 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 O-247 PG-TO247 52N50C3 009-134-A 52n50c3 SPW52N50C3	PDF
52N50C3 Abstract: SPW52N50C3 Text: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 PG-TO247 Q67040-S4615 52N50C3 52N50C3 SPW52N50C3	PDF
52n50c3 Abstract: SPW52N50 Text: 52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 P-TO247 Q67040-S4615 52N50C3 52n50c3 SPW52N50	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
s4615 Abstract: 52N50C3 SPW52N50C3 Text: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 PG-TO247 Q67040-S4615 52N50C3 009-134-A O-247 s4615 52N50C3 SPW52N50C3	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
52n50c3 Abstract: s4615 SPW52N50C3 Text: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 P-TO247 Q67040-S4615 52N50C3 52n50c3 s4615 SPW52N50C3	PDF
Untitled Abstract: No abstract text available Text: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 PG-TO247 SPW52N50C3 Q67040-S4615 52N50C3	PDF
Untitled Abstract: No abstract text available Text: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 PG-TO247 SPW52N50C3 Q67040-S4615 52N50C3	PDF