Untitled
Abstract: No abstract text available
Text: HB56 A49 A/AT/B-8/10/12 9-Bit DRAM I PIN OUT 4,194,304-Word x 9 Bit High Density Dynamic RAM Module • DESCRIPTION T he H B 56A 49 is a 4M x 9 dynam ic RAM m odule, mounted nine 4M bit DR AM HM 514100JP sealed in SOJ package. An outline of the H B 56A 49 is 30-pin single in-line package having Lead types
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/AT/B-8/10/12
304-Word
514100JP)
30-pin
HB56A49A,
HB56A49AT)
56A49B)
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HM514100
Abstract: No abstract text available
Text: HM 514100JP/ZP-7-4,194,304-W ord x 1-Bit Dynam ic Random A ccess M em ory • DESCR IPTIO N HM514400JP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. HM514100 has realized higher density, higher performance and various func
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HM514100JP-7
HM514100ZP-7
HM514100
20-pin
14100LJP/LZP
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSC2340-XXYS9/KS9_ 4,194,304 Word x 9 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE G EN ERAL DESCRIPTION The Oki M SC2340-XXYS9/KS9 is a fully decoded, 4,194,304 word by 9 bit C M O S dynamic random access memory composed of nine 4Mb DRAM s in S O J M SM 514100JS . The mounting of nine S O Js
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MSC2340-XXYS9/KS9_
SC2340-XXYS9/KS9
514100JS)
MSC2340YS9
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CA58
Abstract: THM94000S THM9400QL 11ITT
Text: 4,194,304 WORD S x 9 BIT D Y N A M I C R A M M O D U L E PRELIMINARY DESCRIPTION The THM 94000S/L is a 4,194,304 words by 9 bits dynam ic RAM module w hich assem bled 9 pcs of T C 514100J on the printed circuit board. The THM 94000S/L is optim ized for application to the system s which are required high density and
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THM94000S/L
TC514100J
THM94000S/L-80
THM94000S/L-10
100ns
150ns
180ns
THM94000S/L-80,
CA58
THM94000S
THM9400QL
11ITT
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B56A
Abstract: No abstract text available
Text: HB56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56A49 is a 4M x 9 dynam ic RAM m odule, m ount ed 9 pieces o f 4 M bit D RAM H M 514100AS, H M 514100JP sealed in an SOJ package. An outline o f th e H B56A49 is the
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HB56A49
304-Word
B56A49
514100AS,
514100JP)
30-pin
HBS6A49
B56A
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514100J
Abstract: No abstract text available
Text: H M 514100J P /Z P - 7 - 4,194,304-Word x 1-Bit Dynamic Random Access Memory • DESCRIPTION HM514400JP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. HM514100 has realized higher density, higher performance and various func
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514100J
304-Word
HM514400JP
HM514100
20-pin
100LJP/LZ
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Z80 ADC
Abstract: TC514100 Z80 INTERFACING TECHNIQUES uras 14 Z80 FIO UAA 180 dot mode
Text: TOSHIBA MEMORY E lectronic C omponents B usiness S ector 4 ,1 9 4 ,3 0 4 WORD X 1 BIT DYNAM IC RAM T C 514 1 0 0 J /Z -8 0 T C 514 1 OOJ/Z-10 DESCRIPTION The 514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The 514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514100
J/Z-80
TC5141OOJ/Z-10
TC514100J/Z
Z80 ADC
Z80 INTERFACING TECHNIQUES
uras 14
Z80 FIO
UAA 180 dot mode
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 1-Bit Dynamic RAM HYB 514100-80/-10 Advanced Information • 4 194 304 words by 1-bit organization • Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514100-80 100 ns access time 190 ns cycle time (HYB 514100-10) • Fast page mode cycle time
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SPS00996
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Siemens HYB 41256-12
Abstract: 41256-12 dram 41256-15 511000BJ-70 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70
Text: Summary of Types Summary of Types Type Ordering Code Package Description Page Memory Components cont’d HYB 41256-10 Q67100-Q380 P-DIP-16 DRAM (Access Time 100 ns) 35 HYB 41256-12 Q67100-Q346 P-DIP-16 DRAM (Access Time 120 ns) 35 HYB 41256-15 Q67100-Q347
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511000B-60
511000B-70
511000B-80
511000BJ-60
511000BJ-70
511000BJ-80
511000BJL-60
511000BJL-70
511000BL-60
511000BL-70
Siemens HYB 41256-12
41256-12 dram
41256-15
Q67100-Q539
41256-12
514400J-10
514256BZ-70
514400J-80
511000BZL-70
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514100J
Abstract: 514100J-80 514100
Text: SIEM ENS 4M X 1-Bit Dynamic RAM HYB 514100-80/-10 Advanced Information • 4 194 304 words by 1-bit organization • Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514100-80 100 ns access time 190 ns cycle time (HYB 514100-10) • Fast page mode cycle time
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SPS0Q996
514100J
514100J-80
514100
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hitachi sr 302
Abstract: No abstract text available
Text: HI TA C H I / L O G I C / A R R A Y S / M E M S1E D I 44^203 514100JP/ZP-7- OGi abl B fibl • H I T E "T- 4 4 ,-2 3 -IS" 4,194,304-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION HM51440QJP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x
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HM514100JP/ZP-7--------------------
304-Word
HM51440QJP
HM514100
20-pin
CP-20DA)
hitachi sr 302
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Untitled
Abstract: No abstract text available
Text: 4,194,304 I'.'ORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DE S CRIPTION The 514100JL/ZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The 514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as
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TC514100JL/ZL
TC514100J/Z.
TC5141
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514100J
Abstract: No abstract text available
Text: 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The 514100JL/ZL is the new generation dynamic RAM organized A,194,304 words by 1 bit. The 514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as
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TC514100JL/ZL
TC514100J/Z.
TC5141OOJL/ZL-80
TC5141
OOJL/ZL-10
514100J
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hm514100
Abstract: RAS 1215 I22z
Text: 514100JP/ZP-7 4 Megabit DRAM 4,194,304-Word x 1-Btt Dynamic Random Access Memory • DESCRIPTION The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x 1 bit. HM514100 has realized higher density, higher performance and various functions by employing 0.8
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HM514100JP/ZP-7
304-Word
HM514100
20-pin
5J4400JP
12-Vs,
RAS 1215
I22z
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Untitled
Abstract: No abstract text available
Text: MEMORY TOSHIBA E lectronic C omponents B usiness S ector 514100J/Z-80 TC5141OOJ/Z-10 4 ,1 9 4 ,3 0 4 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The 514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The 514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514100J/Z-80
TC5141OOJ/Z-10
TC514100J/Z
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Untitled
Abstract: No abstract text available
Text: HB56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A49 is a 4M x 9 dynamic RAM module, mount ed 9 pieces of 4 Mbit DRAM HM514100AS, 514100JP sealed in an SOJ package. An outline of the HB56A49 is the
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HB56A49
304-Word
HM514100AS,
HM514100JP)
30-pin
HB56A49
56A49
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LRAL
Abstract: ZL10 ZL-10 xckp TC514100JL TC514100
Text: 4,194,304 !‘. fQRD x 1 BIT DYNAMIC RAf1 * This is advanced information and specifications are subject to change without notice. DESCRIPTION The 514100JL/ZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The 514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as
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TC514100JL/ZL
TC514100J/Z.
TC5141OOJUZLâ
TC5141
LRAL
ZL10
ZL-10
xckp
TC514100JL
TC514100
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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