512MB ddp
Abstract: 64MX8 256Mb SO-DIMM 512MB
Text: 512MB 64Mx64 SODIMM Solution Samsung’s proposal is DDP 512Mb based 512MB SODIMM!! Solution I Solution II Based Component Mono 512Mb DDP 512Mb Stacked 512Mb Package Type TSOP2 TSOP2 Stacked TSOP2 No. of Dies 8pcs 16pcs of 256Mb 16pcs of 256Mb 32Mx16, one /CS 64Mx8, two /CS
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512MB
64Mx64)
512Mb
16pcs
256Mb
512MB ddp
64MX8
256Mb
SO-DIMM
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KFG8GH6U4M
Abstract: KFM8GH6Q4M KFG8G16Q4M-DEB6 16gb 005DH KFG8GH6Q4M KFM8G16Q4M KFG1216U2B-DIB6 kfg8gh6u4m-deb6 oneNand flash
Text: Device ID Data of OneNAND Flash 2007.08 Product Density Voltage Interface 1.8V 512Mb A-die 512Mb Demux 3.3V 1.8V 1Gb Mono 1Gb M-die 2Gb DDP 1.8V 4Gb QDP 1Gb Mono 1Gb A-die 2Gb DDP 1.8V 4Gb QDP Mux Demux Mux Demux Mux Demux Demux Mux Demux Mux Demux 1.8V 512Mb B-die
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512Mb
512Mb
0064h
0060h
0065h
007Ch
0078h
KFG8GH6U4M
KFM8GH6Q4M
KFG8G16Q4M-DEB6
16gb
005DH
KFG8GH6Q4M
KFM8G16Q4M
KFG1216U2B-DIB6
kfg8gh6u4m-deb6
oneNand flash
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Untitled
Abstract: No abstract text available
Text: 256MB, 512MB, 1GB x72, ECC, SR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM (RDIMM) MT9HTF3272(P) – 256MB MT9HTF6472(P) – 512MB MT9HTF12872 (P) – 1GB For the latest data sheet and for component data sheets, refer to Micron's Web site: www.micron.com/products/ddr2
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256MB,
512MB,
240-Pin
MT9HTF3272
256MB
MT9HTF6472
512MB
MT9HTF12872
240-pin,
PC2-3200,
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micron DDR2 184-pin
Abstract: No abstract text available
Text: 512MB, 1GB, 2GB x72, ECC, SR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM (RDIMM) MT18HTF6472(P) – 512MB MT18HTF12872(P) – 1GB MT18HTF25672 (P) – 2GB For the latest data sheet and for component data sheets, refer to Micron's Web site: www.micron.com/products/ddr2
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512MB,
240-Pin
MT18HTF6472
512MB
MT18HTF12872
MT18HTF25672
240-pin,
PC2-3200,
PC2-4200,
PC2-5300
micron DDR2 184-pin
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Untitled
Abstract: No abstract text available
Text: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based Registered DDR2
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240pin
512Mb
co125R72M
1240pin
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HYMP125R72MP4-E3
Abstract: HYMP512R72P4-E3 dm 533 DDR2-400 DDR2-533 BA 758
Text: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based Registered DDR2
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240pin
512Mb
1240pin
HYMP125R72MP4-E3
HYMP512R72P4-E3
dm 533
DDR2-400
DDR2-533
BA 758
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Untitled
Abstract: No abstract text available
Text: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based
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200pin
512Mb
128Mx64
HYMP112S64M
1200pin
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Untitled
Abstract: No abstract text available
Text: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based
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200pin
512Mb
1200pin
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HYMP564S64P6-E3
Abstract: DDR2-400
Text: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based
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200pin
512Mb
128Mx64
HYMP112S64M
1200pin
HYMP564S64P6-E3
DDR2-400
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Untitled
Abstract: No abstract text available
Text: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based
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200pin
512Mb
1200pin
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128Mbx64
Abstract: HYMP564S64P6 HYMP564S64P6-E3 DDR2-400
Text: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based
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200pin
512Mb
1200pin
128Mbx64
HYMP564S64P6
HYMP564S64P6-E3
DDR2-400
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VR5Wx567218GBW
Abstract: S-108 PC2-3200 PC2-5300 PC2-6400 80 pin miniDIMM minidimm 256Mx
Text: DDR2 ECC REGISTERED VERY LOW PROFILE MINI-DIMM 512MB ~ 2GB MODULE CONFIGURATIONS V/I Part Number VR5Wx647218EBP VR5Wx647218EBS VR5Wx647218EBW VR5Wx647218EBY VR5Wx647218EBZ VR5Wx287218FBP VR5Wx287218FBS VR5Wx287218FBW VR5Wx287218FBY VR5Wx287218FBZ VR5Wx567218GBP
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512MB
VR5Wx647218EBP
VR5Wx647218EBS
VR5Wx647218EBW
VR5Wx647218EBY
VR5Wx647218EBZ
VR5Wx287218FBP
VR5Wx287218FBS
VR5Wx287218FBW
VR5Wx287218FBY
VR5Wx567218GBW
S-108
PC2-3200
PC2-5300
PC2-6400
80 pin miniDIMM
minidimm
256Mx
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Untitled
Abstract: No abstract text available
Text: SM572648578DDBS01 June 24, 2002 Orderable Part Numbers Part Numbers SM572648578DDBS01 Description 64Mx72 512MB , SDRAM 144-pin SODIMM, Unbuffered, ECC, 64Mx8 Based, PC133, CL = 2 & 3, 36.32mm Revision History • June 24, 2002 Modified the value of capacitance for DDP device.
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SM572648578DDBS01
SM572648578DDBS01
64Mx72
512MB)
144-pin
64Mx8
PC133,
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Untitled
Abstract: No abstract text available
Text: M470L6423CK0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on DDP 64Mx 8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 M470L6423CK0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (August 2001)
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M470L6423CK0
200pin
512MB
64Mx64
64bit
DDR266A
DDR266B
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DDR200
Abstract: DDR266A DDR266B
Text: M470L6423CK0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on DDP 64Mx 8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 200pin DDR SDRAM SODIMM M470L6423CK0 Revision History Revision 0.0 (August 2001)
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M470L6423CK0
200pin
512MB
64Mx64
64bit
DDR266A
DDR266B
DDR200
DDR266A
DDR266B
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Untitled
Abstract: No abstract text available
Text: M470L6423CK0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on DDP 64Mx 8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.0 Aug. 2001 Rev. 0.0 Aug. 2001 M470L6423CK0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (August 2001)
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M470L6423CK0
200pin
512MB
64Mx64
64bit
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WED3DG7265V-D1
Abstract: No abstract text available
Text: WED3DG7265V-D1 512MB- 64Mx72 SDRAM, UNBUFFERED W/PLL FEATURES DESCRIPTION n Burst Mode Operation The WED3DG7265V is a 64Mx72 synchronous DRAM module which consists of nine 64Mx8 DDP SDRAM components in TSOP- 11 package, and one 2K EEPROM in an 8- pin TSSOP
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WED3DG7265V-D1
512MB-
64Mx72
WED3DG7265V
64Mx8
mayWED3DG7265V-D1
WED3DG7265V10D1
WED3DG7265V7D1
WED3DG7265V75D1
WED3DG7265V-D1
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samsung toggle mode NAND
Abstract: No abstract text available
Text: MuxOneNAND512 KFM1216Q2A-DEB5 FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) 1.0 FLASH MEMORY
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MuxOneNAND512
KFM1216Q2A-DEB5)
512Mb
KFM1216Q2A-DEB5
63FBGA
63-FBGA-9
samsung toggle mode NAND
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samsung toggle mode NAND
Abstract: No abstract text available
Text: MuxOneNAND512 KFM1216Q2A-DEB5 FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) 1.0 FLASH MEMORY
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MuxOneNAND512
KFM1216Q2A-DEB5)
512Mb
KFM1216Q2A-DEB5
63FBGA
63-FBGA-9
samsung toggle mode NAND
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512MB NOR FLASH
Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial
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OneNAND512
KFG1216x2A-xxB5)
KFG1216Q2A-DEB5
512Mb
63FBGA
KFG1216Q2A-FEB5
63FBGA
KFG1216U2A-DIB5
KFG1216U2A-FIB5
512MB NOR FLASH
"bad block" smartmedia ecc
oneNand
samsung 2GB Nand flash
Samsung Electronics. NAND flash memory
code lock circuit flow chart
KFG1216
mlc nand flash lsb msb
NAND flash memory
SAMSUNG NAND FLASH
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KFG1216x2A-xxB5
Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial
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OneNAND512
KFG1216x2A-xxB5)
512Mb
KFG1216Q2A
63FBGA
/63FBGA
KFG1216D2A
KFG1216U2A
KFG1216x2A-xxB5
512MB NOR FLASH
mlc nand flash lsb msb
OneNand DRAM
SAMSUNG 256Mb NAND Flash Qualification Report
KFG1216D2A
KFG1216Q2A
KFG1216U2A
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NT6SM32M16AG-S1
Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature Options Fully synchronous; all signals registered on positive edge of Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed
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512Mb
NT6SM32M16AG
NT6SM16M32AK
NT6SM16M32RAK
-32Meg
-16Meg
-54-ball
-90-ball
x13mm)
32M16
NT6SM32M16AG-S1
NT6SM16M32
128M32
Lpddr2 Idd1
8M32R
NT6SM16M32AK-S1
lpddr2 layout
lpddr2 256mb
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Lpddr2 Idd7
Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32
Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature Options Fully synchronous; all signals registered on positive edge of Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed
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512Mb
NT6SM32M16AG
NT6SM16M32AK
NT6SM16M32RAK
-32Meg
-16Meg
-54-ball
-90-ball
x13mm)
32M16
Lpddr2 Idd7
COMMAND42
lpddr2 256mb
lpddr2 layout
NT6SM32M16AG-S2
LPDDR2 1Gb Memory
NT6SM16M32
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Untitled
Abstract: No abstract text available
Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB6 2.65V(2.4V~2.9V) Extended
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OneNAND512
KFG1216x2A-xxB6)
KFG1216Q2A-DEB6
KFG1216Q2A-FEB6
KFG1216D2A-DEB6
KFG1216D2A-FEB6
KFG1216U2A-DIB6
KFG1216U2A-FIB6
63FBGA
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