FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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KBU 106
Abstract: 512-MB1S 512-KBL08 512-MDB6S 512-KBU4M DFB2560 512-KBU4K Fairchild kbu KBU 105 DFB2060
Text: Diodes & Rectifiers Fairchild FAIRCHILD Rectifiers FAST RECOVERY RECTIFIERS CONT. MOUSER STOCK NO. Fairchild Part No. 512-1N4935 512-1N4936 ♦ 512-RGF1G 512-RGP10G 512-1N4937 ♦ 512-RGF1J 512-RGP10K ♦ 512-RGF1M 512-RGP10M 1N4935 1N4936 RGF1G RGP10G 1N4937
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512-1N4935
512-1N4936
512-RGF1G
512-RGP10G
512-1N4937
512-RGF1J
512-RGP10K
512-RGF1M
512-RGP10M
1N4935
KBU 106
512-MB1S
512-KBL08
512-MDB6S
512-KBU4M
DFB2560
512-KBU4K
Fairchild kbu
KBU 105
DFB2060
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Untitled
Abstract: No abstract text available
Text: I 512kbltPROM-Radiation Hardened ODD I J L ëX ë 6 4 k x 8 PROM M e m o ry M ic ro c irc u it For Space Applications SEI's 27C512RP RP for RADPAK memory microcircuit features a minimum 100 kilorad (Si) total dose tolerance. Using SEI's radiation hardened RADPAK®packaging technology, the
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512kbltPROM-Radiation
27C512RP
27C512RP
SMJ27C512
TD11241
0Q001P0
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KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L
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256Kb»
32KX8
KM62256CI-5/5L
KM62256CLE
KM62256CLI-7/7L
KM62256DL-5/5L
KM62256DLI-7/7L
512Kb»
64Kx8
KM68512AL-5/5L
KM736V789T-60
8AEL
65z7
KM68U512ALE-L
KM736V689T-8
KM732V595AT
KMB16
36SOJ
KM68U4000A
KM68V2000L-8L
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 1,048,576 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The TC514410AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410 AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
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TC514410AP/AJ/ASJ/AZ
TC514410
350mil)
512Kblock
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aj 454
Abstract: 4402ap
Text: PRELIMINARY 1048,576 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The TC514402AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,"both internally and to the system user.
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TC514402AF/AJ/ASJ/AZ
TC514402AP/AJ/ASJ/AZ
300/350mil)
TC514402AP/AJ/ASJ/AZ-70,
TC514402AP/AJ/ASJ/AZ-80
TC514402AP/AJ/ASJ/AZ-10
512Kblock
aj 454
4402ap
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tdk ed29
Abstract: tdk ed28 C6200 UZ111 4h4 1 DMC TOOLS r3311 352-PIN AD17 C6201
Text: TMX320C6201 DIGITAL SIGNAL PROCESSOR SPRS051 - JANUARY 1997 VelociTI Advanced Very-Long Instruction Word VLIW Architecture: - Eight Independent Functional Units - Two 16-Bit Multipliers (32-Bit Results) - Six Arithmetic Logic Units (ALUs) (32-/40-Bit)
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TMX320C6201
SPRS051
32-Bit
16-Bit
32-/40-Bit)
flTbl722
tdk ed29
tdk ed28
C6200
UZ111
4h4 1
DMC TOOLS
r3311
352-PIN
AD17
C6201
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ULN 8 DIP
Abstract: WPS512K8L-XXX
Text: Hfl WPS512K8L-XXX1 WHITE MICROELECTRONICS 512Kx8 SRAM p r e l im in a r y * PLASTIC PLUS1" FEATURES • Access Times 55,70,85ns * PIN CONFIGURATION TOP VIEW «C 31 30 20 28 27 a 23 24 23 uooC uoiC uoaC v«C 21 20 19 1« 17 2 3 * 5 « C ■ A 5C 7 m C A 3C 8
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WPS512K8L-XXX1
512Kx8
600mil
525mil
400mil
512KBL
400irS
400ml
512Kx
ULN 8 DIP
WPS512K8L-XXX
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0257S2
Abstract: No abstract text available
Text: ADV MI CRO BÖE MEMORY D . * QSS7SSÖ 002=14^ W PS ÏS -2 ? I AMD4 3 £? Advanced Micro Devices Am27C512L 65,536 x 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tim e—70ns ■ Ultra-low power consum ption: - 5 mA maximum active current at 5 MHz
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Am27C512L
27C5l2
512K-blt,
AITI27C512L
T-46-13-29
0257S2
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