he 8050d
Abstract: 4704 8 pin ic IOA2 musical applications of microprocessor
Text: Preliminary SPC501A 512KB EPROM SOUND CONTROLLER GENERAL DESCRIPTION The SPC501A is a CPU based two-channel speech/melody synthesizer including CMOS 8-bit microprocessor with 69 instructions, 512K-byte EPROM for speech and melody data Speech is compressed by a 4-bit ADPCM
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SPC501A
512KB
SPC501A
512K-byte
128-byte
he 8050d
4704 8 pin ic
IOA2
musical applications of microprocessor
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M27C800
Abstract: M27V800 Q15A
Text: M27V800 LOW VOLTAGE 8 Megabit 1Meg x 8 or 512K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz
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M27V800
110ns
26sec.
M27V800
M27C800
M27C800
Q15A
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32-PIN RAD-PAK FLAT PACKAGE
Abstract: No abstract text available
Text: 27C512T 512K 64K x 8-Bit OTP EPROM A5-A9 1024 x 1022 Memory Matrix x-Decoder A12-A16 I/O0 Y- Gating Input Data Control I/O15 Y - Decoder CE OE A0-A4 A10-A11 PGM VCC VPP VSS H H : High Threshhold Inverter FEATURES: DESCRIPTION: • 64K x 8-bit OTP EPROM organization
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27C512T
A12-A16
I/O15
A10-A11
27C512T
32-PIN RAD-PAK FLAT PACKAGE
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interfacing eprom and eeprom
Abstract: 27 eprom programmer schematic 2kx8 EPROM DSP56300 0d108 DSP56301 DSP56302 DSP56303 DSP56000 atmel eeprom
Text: MOTOROLA Order by APR 27/D Motorola Order Number Rev. 0 , 4/05/99 Semiconductor Application Note by Phil Brewer 1 Overview This application note describes how to interface electrically erasable and programmable read only memory (EEPROM) and erasable programmable read only memory (EPROM)
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DSP56300
24-Bit
Office141
interfacing eprom and eeprom
27 eprom programmer schematic
2kx8 EPROM
0d108
DSP56301
DSP56302
DSP56303
DSP56000
atmel eeprom
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DSP56303PV80
Abstract: AT8C16 27 eprom programmer schematic DSP56300 APR27 AT28C16 AT28C16-25 DSP56000 DSP56303 QS3245
Text: Freescale Semiconductor Application Note APR27 Rev. 1, 10/2005 Interfacing EPROM and EEPROM Memory with the DSP56300 Family of Digital Signal Processors by Phil Brewer This application note describes how to interface electrically erasable and programmable read only memory EEPROM and
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APR27
DSP56300
24-Bit
24-Bit
DSP56303PV80
AT8C16
27 eprom programmer schematic
APR27
AT28C16
AT28C16-25
DSP56000
DSP56303
QS3245
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Flash SIMM 80 64mb
Abstract: amd processor based Circuit Diagram Flash SIMM 80 S 4297 GT-64010A IDT79RV4700 IDT7M9502 0x1c800000 80 pin simm flash 64mb dram card 60 pin
Text: PRELIMINARY IDT7M9507 IDT79RV4700 PROCESSORBASED PCI CARD Integrated Device Technology, Inc. FEATURES: • PCI – host to PCI bridge – PCI to main memory bridge – fully compatible to PCI rev 2.1 – high performance PCI interfaces via 96 bytes of posted write and read prefetch buffers; 32-bit data bus
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IDT7M9507
IDT79RV4700
32-bit
100MHz
200MHz
IDT7M9507
120-position
7M9507
Flash SIMM 80 64mb
amd processor based Circuit Diagram
Flash SIMM 80
S 4297
GT-64010A
IDT7M9502
0x1c800000
80 pin simm flash 64mb
dram card 60 pin
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GT-64010A
Abstract: IDT79RV4700 led watch
Text: PRELIMINARY IDT7M9507 IDT79RV4700 PROCESSORBASED PCI CARD Integrated Device Technology, Inc. FEATURES: • PCI – host to PCI bridge – PCI to main memory bridge – fully compatible to PCI rev 2.1 – high performance PCI interfaces via 96 bytes of
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IDT7M9507
IDT79RV4700
32-bit
100MHz
175MHz
50MHz
IDT7M9507
GT-64010A
led watch
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TH7852A
Abstract: TH7890M TH7803A TH7890 AT93C56SC TH7802A VHDL code for ADC and DAC SPI with FPGA AT45DB021-SC CAMELIA 1.6M digital dice design of digital VHDL altera
Text: R PRODUCT GUIDE October 2000 AT90 Series AVR 8-bit Microcontrollers Part Number Processor Description Availability AT90S1200 AVR AVR RISC, In-System Programmable Microcontroller with 1K Byte Flash and 64 Bytes EEPROM, 20-pin PDIP, 20-lead SOIC and 20-lead SSOP Packages
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AT90S1200
20-pin
20-lead
AT90S2313
AT90S2323
AT90LS2323
10/00/35M
TH7852A
TH7890M
TH7803A
TH7890
AT93C56SC
TH7802A
VHDL code for ADC and DAC SPI with FPGA
AT45DB021-SC
CAMELIA 1.6M
digital dice design of digital VHDL altera
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capacitor 0.1u
Abstract: 27C1024 27C4001 EM78815 EM78P813 ICE815 exd6 32.768k CRYSTAL EXA17
Text: ICE815 FOR EM78815 EM78P813 Version 1.2 2006/07/06 ELAN MICROELECTRONICS CORP. No. 12, Innovation 1st RD., Science-Based Industrial Park Hsin Chu City, Taiwan. TEL: 03 5639977 FAX: (03)5630118 [ ELAN Caller ID Series Development Reference 1. ELAN IN CIRCUIT EMULATOR
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ICE815
EM78815
EM78P813
500mA
WICE20
EXA10
EXA11
EXA12
EXA13
EXA14
capacitor 0.1u
27C1024
27C4001
EM78815
EM78P813
ICE815
exd6
32.768k CRYSTAL
EXA17
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UVEPROM
Abstract: SMJ27C512 marking code EA SMD 5 pins 5962-8764801XA
Text: UVEPROM SMJ27C512 512K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY SPECIFICATIONS A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-87648 • MIL-STD-883 FEATURES •
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SMJ27C512
MIL-STD-883
28-Pin
600-Mils
MIL-PRF-38535
400mV
-55oC
125oC
SMJ27512
UVEPROM
SMJ27C512
marking code EA SMD 5 pins
5962-8764801XA
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diode MARKING CODE A9
Abstract: LCC-40P-M02
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20832-3E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29LV004T-12-X/MBM29LV004B-12-X • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20832-3E
MBM29LV004T-12-X/MBM29LV004B-12-X
40-pin
F9803
diode MARKING CODE A9
LCC-40P-M02
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1N914
Abstract: A279308-12 A279308L-12
Text: A279308 Preliminary 512K X 8 OTP CMOS EPROM Document Title 512K X 8 OTP CMOS EPROM Revision History Rev. No. History Issue Date Remark Initial issue June 17, 1998 Preliminary Change CE from VIL to VIH during program verify mode Change 32-pin SOP package type to 32-pin TSOP type I
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A279308
32-pin
1N914
A279308-12
A279308L-12
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MPC821
Abstract: No abstract text available
Text: SECTION 15 MEMORY CONTROLLER 15.1 INTRODUCTION The memory controller is responsible for the control of up to eight memory banks. It supports a glueless interface to SRAM, EPROM, flash EPROM, regular DRAM devices, self-refresh DRAMs, extended data output DRAM devices, synchronous DRAMs, and other peripherals.
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MPC821
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Fujitsu FLL 100
Abstract: b96a b96a608
Text: September 1990 Edition 1.0 FUJITSU DATA SHEET MB98A608A-25/609A-25/610A-25 EPROM MEMORY CARD UV ERASABLE READ ONLY MEMORY CARD 256K/512K/1M-BYTE The Fujitsu MB98A608A, MB98A609A and MB98A610A are UV Erasable Read Only Memory EPROM cards capable of storing and retrieving large amounts of data. Each EPROM card
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MB98A608A-25/609A-25/610A-25
256K/512K/1M-BYTE
MB98A608A,
MB98A609A
MB98A610A
MBM27C1001
68-pin
16-bit
MB98A608A-25
MB98A609A-25
Fujitsu FLL 100
b96a
b96a608
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Untitled
Abstract: No abstract text available
Text: SMJ27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGM S019A — SEPTEM BER 1987 — REVISED JANUARY 1991 Military Operating Temperature Flange . . . - 55°C to 125°C J Package Top View MIL-STD-883C Class B Hlgh-Rellablllty Processing Organization . . . 64K x 8
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SMJ27C512
288-BIT
S019A
MIL-STD-883C
27C512-20
27C512-25
27C512-30
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 4M 512K x 8 BIT MB M29LV004T-1 2-x/MBM29LV004B-i 2-x • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts
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M29LV004T-1
2-x/MBM29LV004B-i
40-pin
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flash 29f400
Abstract: 29F400 cdu-9
Text: CONDENSED A D V A N C E IN F O R M A T IO N Am29F400 Advanced Micro Devices 4-Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 V-Only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ I ■ 5.0 V ± 10% w rite and erase - M inimizes system level power requirements
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Am29F400
8-Bit/262
16-Bit
44-pin
15/AB
7096A-3
29F400
29F400
flash 29f400
cdu-9
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Am27CQ40
Abstract: Am27C040
Text: ADV MICRO MEMORY DSS7S2Ö aoa'ibis 3ÖE D T = 4 fe -1 3 -2 9 Am27C040 1 mamdm CI Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time - 90 ns Low power consumption - 20 nA typical CMOS standby current
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Am27C040
28-pin
32-pln
T-46-13-29
14971-006B
Am27CQ40
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TMS27PC512NL
Abstract: TMS27PC512DD TMS27PC512 27C512JL TMS27C512 TA 7176 IC
Text: TMS27C512 524288-BIT UV ERSABLE PROGRAMMABLE TMS27PC512 524288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS512F - NOVEMBER 19 85-R E V IS E D JUNE 1995 • • • • • • • • A15[ 1 A12[ 2 A7[ 3 A6[ 4 21 ] A 10 20 ] E 19 j DQ7 D Q 0 [ 11 D Q 1 [ 12 18 j DQ6
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TMS27C512
524288-BIT
TMS27PC512
SMLS512F
TMS27C512s
TMS27PC512s
27C/PC512-10
27C/PC512-12
27C/PC512-15
TMS27PC512NL
TMS27PC512DD
27C512JL
TA 7176 IC
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TMS27C512
Abstract: 27c512j TMS27C
Text: TMS27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC512 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS512E-NOVEMBER 1985-REVISED DECEMBER 1992 J AN D N PA C K A G E S t This Data Sheet is Applicable to All TMS27C512S and TMS27PC512s Symbolized with Code “B" as Described
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TMS27C512
288-BIT
TMS27PC512
SMLS512E-NOVEMBER
1985-REVISED
TMS27C512S
TMS27PC512s
27c512j
TMS27C
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AM27C040
Abstract: IE728 AM27C040-155 micro memory AM27C040-150DC
Text: ADV MI CR O □ 5 5 7 5 2 Ö D G 3 D S D D 0 • AMD4 MÖE D MEMORY T - 4 6 - 1 3 -2 9 Am27C040 H Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ ■ Fast access time 100% Fiashrite programming - 90 ns
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T-46-13-29
Am27C040
28-pin
32-pin
G25752Ã
14971-006B
Altl27C040
IE728
AM27C040-155
micro memory
AM27C040-150DC
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY B l I l i i 4M 512K x 8/256K x 16 BIT M B M 2 9 L V 4 0 0 T - 12 - x / M B M 2 9 L V 4 0 0 B - 1 2 -x
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8/256K
48-pin
44-pin
46-pin
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S27C512
Abstract: No abstract text available
Text: TMS27C512 524288-BIT UV ERSABLE PROGRAMMABLE TMS27PC512 524288-BIT PROGRAMMABLE READ-ONLY MEMORY I SMLS512F- NOVEMBER 1985 - REVISED JUNE 1996 J ANO N P A C K A G ES TO P VIEW This Data Sheet is Applicable to All TMS27C512S and TMS27PC512s Symbolized with Code “B" as Described on Page 182.
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TMS27C512
524288-BIT
TMS27PC512
SMLS512F-
TMS27C512S
TMS27PC512s
27C/PC512-10
27C/PC512-12
27C/PC512-15
S27C512
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Untitled
Abstract: No abstract text available
Text: MOSEL MS318000 ADVANCE INFORMATION 512K x 16,1 MEG x 8 CMOS Mask Mask Programmable ROM FEATURES DESCRIPTION • Two organizations selectable by BYTE pin • High Speed: 70ns max The M S318000 is an 8 Mb CM OS Sigate maskprogrammable static read only memory organized as
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MS318000
S318000
200ns
250mW
PID085
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