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    512K*8 SRAM 450 MIL Search Results

    512K*8 SRAM 450 MIL Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SMV512K32HFG/EM Texas Instruments 16MB Radiation-Hardened SRAM 76-CFP 25 Only Visit Texas Instruments
    SMV512K32HFG Texas Instruments 16MB Radiation-Hardened SRAM 76-CFP -55 to 125 Visit Texas Instruments Buy
    7M4048L70N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048L100N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048L85N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048S35CB Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation

    512K*8 SRAM 450 MIL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth


    Original     		PDF CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit CY7C11571KV18, CY7C11501KV18 CY7C11461KV18)

    Untitled

    Abstract: No abstract text available
    Text: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth


    Original     		PDF CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit CY7C11571KV18, CY7C11501KV18 CY7C11461KV18)

    3M Touch Systems

    Abstract: No abstract text available
    Text: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth


    Original     		PDF CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit 3M Touch Systems

    as6c4008a

    Abstract: 32-pin 8mm x 13,4mm sTSOP
    Text: AS6C4008A 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.12 REVISION HISTORY Revision Rev. 1.12 Description Initial Issue Issue Date May 15, 2012 Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070 Phone: 650-610-6800 AS6C4008A 512K X 8 BIT LOW POWER CMOS SRAM


    Original     		PDF AS6C4008A AS6C4008A 304-bit 36pin 32pin 400mil 32-pin 8mm x 13,4mm sTSOP

    AS6C4008

    Abstract: as6c4008-55sin AS6C4008-55PCN cmos 4008 AUG09 SRAM 32 pin
    Text: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operatingcurrent : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation


    Original     		PDF AS6C4008 32-pin 36-ball AS6C4008 304-bit as6c4008-55sin AS6C4008-55PCN cmos 4008 AUG09 SRAM 32 pin

    AS6C4008

    Abstract: AS6C4008-55PCN
    Text: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operating current : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation


    Original     		PDF AS6C4008 32-pin 36-ball AS6C4008 304-bit AS6C4008-55PCN

    Untitled

    Abstract: No abstract text available
    Text: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operating current : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation


    Original     		PDF AS6C4008 32-pin 36-ball AS6C4008 304-bit

    AS6C4008

    Abstract: No abstract text available
    Text: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operating current : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation


    Original     		PDF AS6C4008 32-pin 36-ball AS6C4008 304-bit

    AS6C4008-55PCN

    Abstract: AS6C4008 AS6C4008-55SIN AS6C4008-55TIN AS6C4008-55
    Text: January 20072007 February AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operatingcurrent : 30/20mA TYP. Standby current : 4 µA (TYP.) C-version Single 2.7V ~ 5.5V power supply


    Original     		PDF AS6C4008 30/20mA 32-pin 36-ball 44-pin AS6C4008 304-bit AS6C4008-55PCN AS6C4008-55SIN AS6C4008-55TIN AS6C4008-55

    CS18LV40963CI

    Abstract: CS18LV40963D
    Text: High Speed Super Low Power SRAM 512k word x 8 bit CS18LV40963 „ DESCRIPTION The CS18LV40963 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques


    Original     		PDF CS18LV40963 CS18LV40963 50/55/70ns CS18LVrved. 36-ball 2004-March CS18LV40963CI CS18LV40963D

    AS6C4008

    Abstract: AS6C4008-55PCN AS6C4008-55SIN
    Text: MARCH 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C4008 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.


    Original     		PDF AS6C4008 AS6C4008 304-bit 32-pin MAR/09, AS6C4008-55PCN AS6C4008-55SIN

    Untitled

    Abstract: No abstract text available
    Text: January 2007 February 2007 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operatingcurrent : 30/20mA TYP. Standby current : 4 µA (TYP.) C-version Single 2.7V ~ 5.5V power supply


    Original     		PDF AS6C4008 30/20mA 32-pin 32-pin 36-ball AS6C4008 304-bit

    Untitled

    Abstract: No abstract text available
    Text: LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION „ Fast access time : 35/55/70ns „ Low power consumption: Operating current : 35/25/20mA TYP. Standby current : 5µA (TYP.) LL-version „ Single 4.5V ~ 5.5V power supply


    Original     		PDF LY625128 LY625128 304-bit 35/55/70ns 35/25/20mA 32-pin

    Untitled

    Abstract: No abstract text available
    Text: LY62L5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Lyontek Inc. reserves the rights to change the specifications and products without notice.


    Original     		PDF LY62L5128 LY62L5128 304-bit 32-pin 36-ball

    Untitled

    Abstract: No abstract text available
    Text: LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.5 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC Added -45ns Spec. Added P-DIP PKG Revised Test Condition of ISB1/IDR


    Original     		PDF LY625128 -45ns LY625128 304-bit 32-pin 36-ball

    as6c4008-55PCN

    Abstract: as6c4008-55sin as6c4008-55 AS6C4008 as6c4008-55p 55pcn
    Text: OCTOBER January 20072007 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operatingcurrent : 30/20mA TYP. Standby current : 4 µA (TYP.) C-version Single 2.7V ~ 5.5V power supply


    Original     		PDF AS6C4008 30/20mA 32-pin 36-ball AS6C4008 304-bit as6c4008-55PCN as6c4008-55sin as6c4008-55 as6c4008-55p 55pcn

    Untitled

    Abstract: No abstract text available
    Text: LY62L5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Deleted L Spec. Added SL Spec. Revised VTERM to VT1 and VT2


    Original     		PDF LY62L5128 LY62L5128 304-bit 32-pin 36-ball

    Untitled

    Abstract: No abstract text available
    Text: LY62L5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Description Initial Issue Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Deleted L Spec. Added SL Spec. Revised VTERM to VT1 and VT2


    Original     		PDF LY62L5128 LY62L5128 304-bit 32-pin 36-ball

    Untitled

    Abstract: No abstract text available
    Text: LY62L5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION „ Fast access time : 45/55/70ns „ Low power consumption: Operating current : 40/30/20mA TYP. Standby current : 20µA (TYP.) L-version 2µA (TYP.) LL-version „ Single 2.7V ~ 3.6V power supply


    Original     		PDF LY62L5128 LY62L5128 304-bit 45/55/70ns 40/30/20mA 32-pin 36-ball

    LY625128SL

    Abstract: LY625128 3217b
    Text:  LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC Added -45ns Spec.


    Original     		PDF LY625128 -45ns -35ns 11/1kage 32-pin 36-ball 44-pin LY625128SL LY625128 3217b

    LY625128

    Abstract: ly625128-70 SRAM 34 pin
    Text: LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.0 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 2.0 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC Added -45ns Spec. Added P-DIP PKG Revised Test Condition of ISB1/IDR


    Original     		PDF LY625128 -45ns 32-pin 36-ball 44-pin LY625128 ly625128-70 SRAM 34 pin

    Untitled

    Abstract: No abstract text available
    Text: LY62L5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.4 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Description Initial Issue Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Deleted L Spec. Added SL Spec. Revised VTERM to VT1 and VT2


    Original     		PDF LY62L5128 32-pin 36-ball 44-pin

    Untitled

    Abstract: No abstract text available
    Text: LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Rev. 1.9 Rev. 1.10 Rev. 1.11 Description Initial Issue Revised VIH to TTL compatible Revised VIH to 0.7*Vcc


    Original     		PDF LY62W5128

    LY62L5128

    Abstract: No abstract text available
    Text:  LY62L5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.8 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Description Initial Issue Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Deleted L Spec.


    Original     		PDF LY62L5128 32-pin 36-ball 44-pin LY62L5128