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    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


    Original     		PDF VL43B1G63A-K0/K9/F8/E7S 1Gx72 204-PIN VL43B1G63A 512Mx8 28-bit 204-pin DDR3-800)

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN4G08VS1636 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase


    Original     		PDF 3DFN4G08VS1636 512Mx8 384KM 3DFP-0636-REV

    usb flash drive circuit diagram

    Abstract: k4075 Transcend V30 Transcend TS512MJF TS512MJFV30 Transcend circuit diagram
    Text: TS512MJFV30 512MB USB2.0 JetFlash V30 Description Features TS512MJFV30 is a 512MB USB Flash Drive with 1pcs • Frame Color: Orange of 512Mx8 Flash Memory assembled on printed circuit • Fully compatible with hi-speed USB 2.0 board. • Easy Plug and Play installation


    Original     		PDF TS512MJFV30 512MB TS512MJFV30 512Mx8 VCC18 usb flash drive circuit diagram k4075 Transcend V30 Transcend TS512MJF Transcend circuit diagram

    usb flash drive circuit diagram

    Abstract: 512Mx8 Transcend Flash Drive Transcend circuit diagram Transcend circuit diagram jetflash TS512MJF130 transcend usb flash drive TS512MJF
    Text: TS512MJF130 Description TS512MJF130 is a 512MB USB Flash Drive with 1 pcs of 512Mx8 Flash Memory assembled on a printed circuit board. 512MB USB2.0 JetFlash Features • Band Color: Orange • USB 2.0 compatible, true Plug and Play • Powered directly via the USB port. No external power or


    Original     		PDF TS512MJF130 TS512MJF130 512MB 512Mx8 usb flash drive circuit diagram Transcend Flash Drive Transcend circuit diagram Transcend circuit diagram jetflash transcend usb flash drive TS512MJF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B1G63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		PDF VL31B1G63A-K0/K9/F8/E7S 1Gx72 240-PIN VL31B1G63A 512Mx8 240-pin 240-pin,

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •


    Original     		PDF IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 cycles/64 cycles/32 IS46TR85120AL -15HBLA2

    Untitled

    Abstract: No abstract text available
    Text: NT2GC64B C H4B0PF / NT4GC64B(C)88B0NF / NT8GC64B(C)8HB0NF 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-12800 -DI Unit


    Original     		PDF NT2GC64B NT4GC64B 88B0NF NT8GC64B 1024M 256Mx16 512Mx8 240-Pin 256Mx64

    Untitled

    Abstract: No abstract text available
    Text: NT2GC64B C H4B0PF / NT4GC64B(C)88B0(1)NF / NT8GC64B(C)8HB0NF 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-12800 -DI


    Original     		PDF NT2GC64B NT4GC64B NT8GC64B 1024M 256Mx16 512Mx8 240-Pin 256Mx64 256Mx16 512Mx64

    HY27UF084

    Abstract: hynix nand flash 4Gb HY27UF084G2M 52-ULGA
    Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UF084G2M 512Mx8bit) HY27UF084G2M HY27UF084 hynix nand flash 4Gb 52-ULGA

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B1G63E-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM VLP ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63E is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		PDF VL31B1G63E-K0/K9/F8/E7S 1Gx72 240-PIN VL31B1G63E 512Mx8 240-pin 240-pin,

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL43D1G63A-K9S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC REGISTERED SO-RDIMM 204-PIN Description The VL43D1G63A is a 1Gx72 DDR3 SDRAM high density SO-RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


    Original     		PDF VL43D1G63A-K9S 1Gx72 204-PIN VL43D1G63A 512Mx8 28-bit 204-pin

    Untitled

    Abstract: No abstract text available
    Text: SG572128CH8YZUU1 January 13, 2010 Ordering Information Part Numbers Description Module Speed SG572128CH8YZKA1 512Mx72 4GB , DDR3, 244-pin Registered Mini-DIMM, Parity, ECC, VLP, 512Mx8 Based (Stacked - two 256Mx8), DDR3-800-555, 18.75mm, Green Module (RoHS


    Original     		PDF SG572128CH8YZUU1 SG572128CH8YZKA1 512Mx72 244-pin 512Mx8 256Mx8) DDR3-800-555, PC3-6400 SG572128CH8YZ6B1

    Untitled

    Abstract: No abstract text available
    Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UF084G2M 512Mx8bit) HY27UF084G2M

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL43D1G63A-K9S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC REGISTERED SO-RDIMM 204-PIN Description The VL43D1G63A is a 1Gx72 DDR3 SDRAM high density SO-RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


    Original     		PDF VL43D1G63A-K9S 1Gx72 204-PIN VL43D1G63A 512Mx8 28-bit 204-pin 204-pin,

    256Mx16bit

    Abstract: W352 hy27uh084g2m
    Text: Preliminary HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004


    Original     		PDF HY27UH HY27SH 512Mx8bit 256Mx16bit) table14) 256Mx16bit W352 hy27uh084g2m

    512Mx8

    Abstract: NT8GC72B
    Text: NT4GC72B C 89B0NF / NT8GC72B(C)8PB0NF 4GB: 512M x 72 / 8GB: 1024M x 72 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3(L)-1333/1600 512Mx8 SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency PC3(L)-10600 PC3(L)-12800


    Original     		PDF NT4GC72B 89B0NF NT8GC72B 1024M 512Mx8

    HY27UF084G2B

    Abstract: HY27UF084 hynix nand HY27UF084G2B datasheet HY27UF(08/16)4G2B Series hynix nand hynix nand 4G hynix nand flash 2gb HY27UF084G2 hynix nand HY27UF084G2B HY27UF
    Text: 1 HY27UF 08/16 4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UF 512Mx8bit) HY27UF084G2B HY27UF084 hynix nand HY27UF084G2B datasheet HY27UF(08/16)4G2B Series hynix nand hynix nand 4G hynix nand flash 2gb HY27UF084G2 hynix nand HY27UF084G2B

    HY27UG084G2M

    Abstract: HY27UG164G2M 52-ULGA hynix nand 4G HY27UG HY27UG084G2 HY27UG084GDM HY27UG084G
    Text: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary


    Original     		PDF HY27UG 512Mx8bit 256Mx16bit) HY27UG084G2M HY27UG164G2M 52-ULGA hynix nand 4G HY27UG084G2 HY27UG084GDM HY27UG084G

    Untitled

    Abstract: No abstract text available
    Text: SG572128CH8SZUU1 October 21, 2009 Ordering Information Part Numbers Description Module Speed SG572128CH8SZKA1 512Mx72 4GB , DDR3, 244-pin Unbuffered Mini-DIMM, ECC, 512Mx8 Based (Stacked - two 256Mx8), DDR3-800555, 18.75mm, Green Module (RoHS Compliant).


    Original     		PDF SG572128CH8SZUU1 SG572128CH8SZKA1 512Mx72 244-pin 512Mx8 256Mx8) DDR3-800555, PC3-6400 SG572128CH8SZ6B1

    Untitled

    Abstract: No abstract text available
    Text: SG5721G8CH8YZUU April 8, 2010 Ordering Information Part Numbers Description Module Speed SG5721G8CH8YZLC 1Gx72 8GB , DDR3, 244-pin Registered Mini-DIMM, Parity, ECC, 512Mx8 Based (Stacked - two 256Mx8), DDR3-1066777, 30.00mm, Green Module (RoHS Compliant).


    Original     		PDF SG5721G8CH8YZUU SG5721G8CH8YZLC 1Gx72 244-pin 512Mx8 256Mx8) DDR3-1066777, PC3-8500 SG5721G8CH8YZPH

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3  0.3V power supply


    Original     		PDF 512Mx64-BGA FN32G64VB8263 32Gbit 512Mx64, 512Mx8 512Mx64-bit 512Mx8-bit MMFN64408808B-D 3DFP-0263-REV

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE DDR2 SDRam 512Mx8-SOP DDR2 SDRAM MODULE 3D 2D4G08US4283 4Gbit DDR2 SDRam organized as 512Mx8 based on 128Mx8 Pin Assignment Top View SOP 74 (Pitch : 0.65 mm) Features • Organized as 512Mx8bit based on four 1Gbit DDR2 SDRam.  Power supply +1.8 ± 0.1V.


    Original     		PDF 512Mx8-SOP 2D4G08US4283 512Mx8 128Mx8 512Mx8bit cycles/64ms MMD208512804SU7 3DFP-0283-REV

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM PRELIMINARY INFORMATION NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V


    Original     		PDF IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 cycles/64 cycles/32 1600MT/s IS46TR85120AL-125KBLA2

    TS1GJFV10

    Abstract: Transcend Flash Drive usb flash drive block diagram usb flash drive circuit diagram
    Text: TS1GJFV10 1GB USB2.0 JetFlash Description Features TS1GJFV10 is a 1GB USB Flash Drive with 1 pcs of • Color : Blue 1Gx8 or 2 pcs of 512Mx8 Flash Memory assembled • Elegant design with sliding USB connector on a printed circuit board. • USB 2.0 compatible, true Plug and Play


    Original     		PDF TS1GJFV10 TS1GJFV10 512Mx8) Me/2000/XP/Vista VCC18 Transcend Flash Drive usb flash drive block diagram usb flash drive circuit diagram